Integrated circuit device incorporating DLL circuit
    4.
    发明授权
    Integrated circuit device incorporating DLL circuit 有权
    集成电路器件结合DLL电路

    公开(公告)号:US06522182B2

    公开(公告)日:2003-02-18

    申请号:US09385008

    申请日:1999-08-27

    IPC分类号: H03L706

    摘要: In the present invention, an external power source supplied to an integrated circuit device is divided into a first external power source for the DLL circuit and a second external power source for circuits other than the DLL circuit. According to the present invention, it is arranged that power source noise generated in the second external power source cannot be transmitted to the variable delay circuit by utilizing the first external power source preferably for the variable delay circuit of the DLL circuit and even more preferably for its delay unit. Also, preferably, it is arranged that power source noise generated in the second external power source cannot be transmitted to the phase coincidence detection unit by utilizing the first power source for the phase coincidence detection unit in the phase comparison circuit of the DLL circuit. Also, by connecting the first external earthing power source to the variable delay circuit and/or phase coincidence detection unit, the effect of power source noise from the second external earthing power source originating from the operation of circuits other than these is suppressed.

    摘要翻译: 在本发明中,提供给集成电路装置的外部电源被分成用于DLL电路的第一外部电源和除了DLL电路以外的电路的第二外部电源。 根据本发明,通过利用第一外部电源优选用于DLL电路的可变延迟电路,而将第二外部电源中产生的电源噪声不能传输到可变延迟电路,甚至更优选地用于 其延迟单位。 此外,优选地,通过利用DLL电路的相位比较电路中的相位一致检测单元的第一电源,将第二外部电源中产生的电源噪声不能发送到相位一致检测单元。 此外,通过将第一外部接地电源连接到可变延迟电路和/或相位一致检测单元,抑制源于除了这些以外的电路的操作的来自第二外部接地电源的电源噪声的影响。

    Hold time margin increased semiconductor device and access time
adjusting method for same
    5.
    发明授权
    Hold time margin increased semiconductor device and access time adjusting method for same 失效
    保持时间裕度增加半导体器件和访问时间调整方法相同

    公开(公告)号:US6081142A

    公开(公告)日:2000-06-27

    申请号:US44160

    申请日:1998-03-19

    摘要: A load adjusting circuit 36 adjusts the load value L=L2 of a dummy load circuit 31x corresponding to the outputs of a frequency determining circuit 37 and an interface determining circuit 35 as L2=L1-.DELTA.L holding, where L=L1 is a proper value in the case that the access time does not depend on the frequency of the data DQ and .DELTA.L corresponds to a half of the maximum value tlc of the deviation of the access time that varies corresponding to the frequency of the data DQ. A DLL circuit 40 delays a internal clock iCLK by a time .delta.tx so that a difference between phases of the clock iCLK and a dummy internal clock d.sub.-- iCLK becomes a predetermined value. The delay time .delta.tx is equal to a value determined in such a way that .delta.tx=67 tx0 is determined with activating the DLL circuit 40, tlc is determined and .delta.tx is finally determined as .delta.tx=.delta.tx0+ tlc/2 or .delta.tx=.delta.tx0-tlc/2 due to the condition of data frequency at determining .delta.tx0.

    摘要翻译: 负载调整电路36将与频率确定电路37和接口确定电路35的输出对应的虚拟负载电路31x的负载值L = L2调整为L2 = L1-DELTA L保持,其中L = L1是适当的 在访问时间不依赖于数据DQ和DELTA L的频率的情况下的值对应于对应于数据DQ的频率变化的访问时间的偏差的最大值t1lc的一半。 DLL电路40将内部时钟iCLK延迟时间Δtx,使得时钟iCLK和虚拟内部时钟d-iCLK的相位之间的差成为预定值。 延迟时间Δtx等于以这样一种方式确定的值,即通过激活DLL电路40来确定Δtx= 67tx0,确定tlc,并且最后将Δtx确定为Δtx= delta tx0 + tlc / 2或delta 由于在确定delta tx0时数据频率的条件,tx = delta tx0-tlc / 2。

    Semiconductor memory
    6.
    发明申请
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号:US20070153613A1

    公开(公告)日:2007-07-05

    申请号:US11715851

    申请日:2007-03-09

    IPC分类号: G11C5/14

    摘要: A partial area for retaining data during low power consumption mode is composed of a single first memory cell out of a plurality of memory cells connected to a bit line. An operation control circuit operates any of the memory cells selected in accordance with an address signal during normal operation mode for performing a read operation and a write operation. The operation control circuit keeps latching data retained by the first memory cell in the partial area into a sense amplifier during the low power consumption mode. This eliminates the need for a refresh operation for retaining the data in the first memory cell during the low power consumption mode. Since the data can be retained without a refresh operation, it is possible to reduce the power consumption during the low power consumption mode.

    摘要翻译: 在低功耗模式期间用于保留数据的部分区域由连接到位线的多个存储单元中的单个第一存储单元组成。 操作控制电路在正常操作模式期间操作根据地址信号选择的任何存储单元,以执行读操作和写操作。 操作控制电路在低功耗模式期间将由部分区域中的第一存储单元保留的数据保持为读出放大器。 这消除了在低功耗模式期间需要用于将数据保持在第一存储单元中的刷新操作。 由于可以在不进行刷新操作的情况下保持数据,因此可以在低功耗模式下降低功耗。

    Semiconductor memory
    7.
    发明授权
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号:US07317650B2

    公开(公告)日:2008-01-08

    申请号:US11715851

    申请日:2007-03-09

    IPC分类号: G11C7/00

    摘要: A partial area for retaining data during low power consumption mode is composed of a single first memory cell out of a plurality of memory cells connected to a bit line. An operation control circuit operates any of the memory cells selected in accordance with an address signal during normal operation mode for performing a read operation and a write operation. The operation control circuit keeps latching data retained by the first memory cell in the partial area into a sense amplifier during the low power consumption mode. This eliminates the need for a refresh operation for retaining the data in the first memory cell during the low power consumption mode. Since the data can be retained without a refresh operation, it is possible to reduce the power consumption during the low power consumption mode.

    摘要翻译: 在低功耗模式期间用于保留数据的部分区域由连接到位线的多个存储单元中的单个第一存储单元组成。 操作控制电路在正常操作模式期间操作根据地址信号选择的任何存储单元,以执行读操作和写操作。 操作控制电路在低功耗模式期间将由部分区域中的第一存储单元保留的数据保持为读出放大器。 这消除了在低功耗模式期间需要用于将数据保持在第一存储单元中的刷新操作。 由于可以在不进行刷新操作的情况下保持数据,因此可以在低功耗模式下降低功耗。

    Semiconductor memory
    9.
    发明授权
    Semiconductor memory 失效
    半导体存储器

    公开(公告)号:US06829192B2

    公开(公告)日:2004-12-07

    申请号:US10335949

    申请日:2003-01-03

    IPC分类号: G11C700

    摘要: A partial area for retaining data during low power consumption mode is composed of a single first memory cell out of a plurality of memory cells connected to a bit line. An operation control circuit operates any of the memory cells selected in accordance with an address signal during normal operation mode for performing a read operation and a write operation. The operation control circuit keeps latching data retained by the first memory cell in the partial area into a sense amplifier during the low power consumption mode. This eliminates the need for a refresh operation for retaining the data in the first memory cell during the low power consumption mode. Since the data can be retained without a refresh operation, it is possible to reduce the power consumption during the low power consumption mode.

    摘要翻译: 在低功耗模式期间用于保留数据的部分区域由连接到位线的多个存储单元中的单个第一存储单元组成。 操作控制电路在正常操作模式期间操作根据地址信号选择的任何存储单元,以执行读操作和写操作。 操作控制电路在低功耗模式期间将由部分区域中的第一存储单元保留的数据保持为读出放大器。 这消除了在低功耗模式期间需要用于将数据保持在第一存储单元中的刷新操作。 由于可以在不进行刷新操作的情况下保持数据,因此可以在低功耗模式下降低功耗。