Method of transferring Bloch lines in the domain wall of a magnetic
domain, and a magnetic memory using the method
    6.
    发明授权
    Method of transferring Bloch lines in the domain wall of a magnetic domain, and a magnetic memory using the method 失效
    在磁畴的畴壁中转移Bloch线的方法和使用该方法的磁存储器

    公开(公告)号:US4974200A

    公开(公告)日:1990-11-27

    申请号:US78845

    申请日:1987-07-28

    IPC分类号: G11C19/08

    CPC分类号: G11C19/0825

    摘要: A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal. A pulsed magnetic field is applied in a direction perpendicular to a surface of the memory substrate for shifting the Bloch lines between potential wells.

    摘要翻译: 存在于形成在薄磁性公司中的磁畴的畴壁中的Bloch线的方法包括沿畴壁循环形成不对称势阱,以便将Bloch线定位在畴壁的预定位置,并施加 脉冲磁性膜将Bloch线从预定的势阱转移到另一个势阱。 在用于使用Bloch线作为信息载体记录信息的磁存储器中,存储器基板具有由畴壁限定的条状磁畴,沿着该磁畴周期地形成不对称势阱以使沿着畴壁稳定布洛赫线。 根据输入信息将Bloch线写入畴壁,读出如此形成的Bloch线,并将读出的Bloch线转换为电信号。 在垂直于存储器基板的表面的方向施加脉冲磁场,用于移动势阱之间的Bloch线。