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    Method of Purifying Metal
    2.
    发明申请
    Method of Purifying Metal 有权
    净化金属的方法

    公开(公告)号：US20080289150A1

    公开(公告)日：2008-11-27

    申请号：US11631287

    申请日：2005-07-04

    申请人： Kenji Wada ,  Toshiaki Fukuyama ,  Ryotatsu Otsuka

    发明人： Kenji Wada ,  Toshiaki Fukuyama ,  Ryotatsu Otsuka

    IPC分类号： B01D9/00

    CPC分类号： C22B9/02 ,  C01B33/037 ,  C22B61/00 ,  Y02P10/234

    摘要： A method for purifying a metal, which includes: a first step of holding a first molten metal containing impurities in a first crucible; a second step of immersing a first cooling body in the first molten metal held in the first crucible while letting a cooling fluid flow in the interior of the cooling body to crystallize a first purified metal on a surface of the cooling body; a third step of taking out the first cooling body with the first purified metal crystallized thereon from the first molten metal; a fourth step of holding in a crucible a second molten metal having an impurity concentration less than that of the first molten metal of the first step; a fifth step of melting the first purified metal crystallized in the second step and holding the molten metal in a second crucible together with the second molten metal held in the fourth step; a sixth step of immersing a second cooling body in the second molten metal held in the fifth step while letting a cooling fluid flow in the interior of the cooling body to crystallize a second purified metal on a surface of the cooling body; and a seventh step of taking out the second cooling body with the second purified metal crystallized thereon in the sixth step from the second molten metal.

    摘要翻译： 一种净化金属的方法，其特征在于包括：将含有杂质的第一熔融金属保持在第一坩埚中的第一步骤; 将第一冷却体浸入保持在第一坩埚中的第一熔融金属中，同时使冷却流体在冷却体的内部流动使第一纯化金属在冷却体的表面上结晶的第二步骤; 第三步骤，从第一熔融金属取出第一冷却体，其中结晶有第一纯化金属; 在坩埚中保持杂质浓度小于第一步骤的第一熔融金属的第二熔融金属的第四步骤; 熔化在第二步骤中结晶的第一纯化金属并将熔融金属与保持在第四步骤中的第二熔融金属一起保持在第二坩埚中的第五步骤; 将第二冷却体浸渍在第五工序中保持的第二熔融金属中，同时使冷却液在冷却体内流动，使第二纯化金属在冷却体的表面上结晶的第六工序; 以及第七步骤，从第二熔融金属在第六步骤中从第二冷却体中取出第二纯化金属在其上结晶化。

    Silicon purifying method, slag for purifying silicon and purified silicon
    3.
    发明申请
    Silicon purifying method, slag for purifying silicon and purified silicon 审中-公开
    硅精制方法，用于纯化硅和纯化硅的炉渣

    公开(公告)号：US20050139148A1

    公开(公告)日：2005-06-30

    申请号：US10503304

    申请日：2003-02-03

    申请人： Hiroyasu Fujiwara ,  Ryotatsu Otsuka ,  Kenji Wada ,  Toshiaki Fukuyama

    发明人： Hiroyasu Fujiwara ,  Ryotatsu Otsuka ,  Kenji Wada ,  Toshiaki Fukuyama

    IPC分类号： C01B33/037 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C01B33/037

    摘要： Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a rotating/driving mechanism for stirring the molten silicon. The molten slag is dispersed in the molten silicon, thereby accelerating the boron removal reaction. It is further effective to use a slag containing at least 45 percent by mass of silicon oxide or to blow gas mixed with water vapor into the molten silicon for refining reaction.

    摘要翻译： 能够以低成本高效率地制造纯度约为6N的硅的方法。 含有硼和渣的原料硅熔化，并通过用于搅拌熔融硅的旋转/驱动机构旋转轴。 熔融渣分散在熔融硅中，从而加速脱硼反应。 使用含有至少45质量％的氧化硅的炉渣或者将与水蒸气混合的气体吹入熔融硅中以进行精制反应是进一步有效的。

    Method For Refining Silicon And Silicon Refined Thereby
    4.
    发明申请
    Method For Refining Silicon And Silicon Refined Thereby 审中-公开
    由此精制硅和硅的方法

    公开(公告)号：US20080031799A1

    公开(公告)日：2008-02-07

    申请号：US11631312

    申请日：2005-07-07

    申请人： Toshiaki Fukuyama ,  Kenji Wada

    发明人： Toshiaki Fukuyama ,  Kenji Wada

    IPC分类号： C01B33/037

    CPC分类号： C01B33/037

    摘要： In order to provide silicon for solar batteries inexpensively by efficient refining and without lowering the refining rate, the present invention is directed to a method for refining molten silicon containing an impurity element. According to one aspect, the method includes the steps of: bringing a refine gas containing a component that reacts with the impurity element into contact with the molten silicone, thereby removing a product containing the impurity element from the molten silicon; and bringing a process gas, having small reactivity with the molten silicon, with the molten silicon, thereby removing a product generated by reaction of the molten silicon and the refine gas.

    摘要翻译： 为了通过有效的精炼提供廉价的太阳能电池的硅并且不降低精炼速度，本发明涉及一种用于精炼含有杂质元素的熔融硅的方法。 根据一个方面，所述方法包括以下步骤：使含有与所述杂质元素反应的成分的精炼气体与所述熔融硅酮接触，从而从所述熔融硅除去含有所述杂质元素的物质; 并且将与熔融硅反应性小的工艺气体与熔融硅反应，从而除去由熔融硅与精炼气体反应产生的产物。

    Positive resist composition and pattern forming method
    8.
    发明授权
    Positive resist composition and pattern forming method 失效
    正抗蚀剂组成和图案形成方法

    公开(公告)号：US08088550B2

    公开(公告)日：2012-01-03

    申请号：US12181757

    申请日：2008-07-29

    申请人： Shinji Tarutani ,  Hideaki Tsubaki ,  Kenji Wada

    发明人： Shinji Tarutani ,  Hideaki Tsubaki ,  Kenji Wada

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/2022 ,  G03F7/2041 ,  Y10S430/111

    摘要： A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).

    摘要翻译： 正型抗蚀剂组合物包括：（A）在用光化射线或辐射照射时能够产生酸的化合物; （B）在碱性显影剂中的溶解度在酸的作用下增加的树脂; （C）能够在酸的作用下分解以产生酸的化合物; 和（D）本身作为由组分（A）和组分（C）产生的酸的碱的化合物，但是在用光化射线或辐射照射时分解，以失去由组分（A）产生的酸的碱度 ）和组分（C）。

    COMPOSITION FOR OPTICAL MATERIALS
    9.
    发明申请
    COMPOSITION FOR OPTICAL MATERIALS 有权
    光学材料组成

    公开(公告)号：US20110089385A1

    公开(公告)日：2011-04-21

    申请号：US12904252

    申请日：2010-10-14

    申请人： Kenji Wada ,  Kyohei Arayama ,  Akiyoshi Goto

    发明人： Kenji Wada ,  Kyohei Arayama ,  Akiyoshi Goto

    IPC分类号： G02B5/22 ,  C07F7/18 ,  C07F7/10

    CPC分类号： C07F7/21 ,  C08G77/045 ,  C08L83/04 ,  G02B1/111

    摘要： The composition for optical materials includes a polymer obtained from silsesquioxanes which are represented by average composition formula (1): (R1SiO1.5)x(R2SiO1.5)y (wherein R1 is a polymerizable group, R2 is a non-polymerizable group, x is a number of 2.0 to 14.0, y is a number of 2.0 to 14.0, provided that x+y=8.0 to 16.0, and R1 groups and R2 groups may be the same or different) and include at least one cage silsesquioxane compound. This composition is suitable for use as the antireflective film in optical devices, has less film shrinkage in the curing step, has good coated surface state and excellent moisture resistance and adhesion, has small changes in the refractive index under high temperature conditions, and is capable of forming a low-refractive-index film.

    摘要翻译： 用于光学材料的组合物包括由平均组成式（1）表示的倍半硅氧烷获得的聚合物：（R1SiO1.5）x（R2SiO1.5）y（其中R1是可聚合基团，R2是不可聚合基团， x为2.0〜14.0的数，y为2.0〜14.0的数，条件是x + y = 8.0〜16.0，R 1基和R 2基可以相同或不同），并且包括至少一种笼型倍半硅氧烷化合物。 该组合物适合用作光学元件中的抗反射膜，在固化步骤中具有较小的膜收缩率，具有良好的涂覆表面状态和优异的耐湿性和粘附性，在高温条件下的折射率变化小，并且能够 形成低折射率膜。