公开(公告)号：US20110143532A1

公开(公告)日：2011-06-16

申请号：US12801013

申请日：2010-05-17

申请人： Keun-Hee Bai ,  Chul-Ho Shin ,  Shin-Hye Kim ,  Sang-Kuk Kim

发明人： Keun-Hee Bai ,  Chul-Ho Shin ,  Shin-Hye Kim ,  Sang-Kuk Kim

IPC分类号： H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31111 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10855 ,  H01L27/10888

摘要： In a method of forming a semiconductor cell structure, a first insulating layer may be formed on a semiconductor substrate. A connection pattern may be formed in the first insulating layer. Second and third insulating layers may be sequentially formed on the connection pattern. The third insulating layer may be etched at least twice and the second insulating layer may be etched at least once to form a through hole in the second and third insulating layers. The through hole may expose the connection pattern.

摘要翻译： 在形成半导体单元结构的方法中，可以在半导体衬底上形成第一绝缘层。 可以在第一绝缘层中形成连接图案。 第二和第三绝缘层可以顺序形成在连接图案上。 可以将第三绝缘层蚀刻至少两次，并且可以蚀刻第二绝缘层至少一次以在第二和第三绝缘层中形成通孔。 通孔可能暴露连接图案。

公开(公告)号：US08252655B2

公开(公告)日：2012-08-28

申请号：US12801013

申请日：2010-05-17

申请人： Keun-Hee Bai ,  Chul-Ho Shin ,  Shin-Hye Kim ,  Sang-Kuk Kim

发明人： Keun-Hee Bai ,  Chul-Ho Shin ,  Shin-Hye Kim ,  Sang-Kuk Kim

IPC分类号： H01L21/8228

CPC分类号： H01L21/76802 ,  H01L21/31111 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10855 ,  H01L27/10888

摘要： In a method of forming a semiconductor cell structure, a first insulating layer may be formed on a semiconductor substrate. A connection pattern may be formed in the first insulating layer. Second and third insulating layers may be sequentially formed on the connection pattern. The third insulating layer may be etched at least twice and the second insulating layer may be etched at least once to form a through hole in the second and third insulating layers. The through hole may expose the connection pattern.

摘要翻译： 在形成半导体单元结构的方法中，可以在半导体衬底上形成第一绝缘层。 可以在第一绝缘层中形成连接图案。 第二和第三绝缘层可以顺序形成在连接图案上。 可以将第三绝缘层蚀刻至少两次，并且可以蚀刻第二绝缘层至少一次以在第二和第三绝缘层中形成通孔。 通孔可能暴露连接图案。

公开(公告)号：US08318412B2

公开(公告)日：2012-11-27

申请号：US12871251

申请日：2010-08-30

申请人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

发明人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

IPC分类号： G03F7/26

CPC分类号： H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

摘要翻译： 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。

公开(公告)号：US20110159442A1

公开(公告)日：2011-06-30

申请号：US12871251

申请日：2010-08-30

申请人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

发明人： Tokashiki Ken ,  Chul-ho Shin ,  Sang-Kuk Kim ,  Do-haing Lee ,  Dong-seok Lee

IPC分类号： G03F7/20

CPC分类号： H01L21/31138 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

摘要： A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.

摘要翻译： 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。

公开(公告)号：US10115893B2

公开(公告)日：2018-10-30

申请号：US15606136

申请日：2017-05-26

申请人： Jongchul Park ,  Sang-Kuk Kim

发明人： Jongchul Park ,  Sang-Kuk Kim

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

公开(公告)号：US10276788B2

公开(公告)日：2019-04-30

申请号：US15608212

申请日：2017-05-30

申请人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongchul Park ,  Sang-Kuk Kim ,  Jongsoon Park ,  Hyeji Yoon ,  Woohyun Lee

发明人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongchul Park ,  Sang-Kuk Kim ,  Jongsoon Park ,  Hyeji Yoon ,  Woohyun Lee

IPC分类号： H01L43/12 ,  H01L27/22

摘要： An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

公开(公告)号：US10431459B2

公开(公告)日：2019-10-01

申请号：US15668689

申请日：2017-08-03

申请人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

发明人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/687

摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

公开(公告)号：US10002905B2

公开(公告)日：2018-06-19

申请号：US15431234

申请日：2017-02-13

申请人： Jongsoon Park ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Jongchul Park ,  Woohyun Lee ,  Yil-hyung Lee

发明人： Jongsoon Park ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Jongchul Park ,  Woohyun Lee ,  Yil-hyung Lee

IPC分类号： H01L43/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： Data storage devices are provided. A data storage device includes a dielectric layer on a substrate. The data storage device includes a plurality of data storage structures on the dielectric layer. The data storage device includes a conductive material on the dielectric layer. Moreover, the data storage device includes an insulation layer on the conductive material.