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64 条记录 (耗时 0.021 秒)

    Reducing line to line capacitance using oriented dielectric films
    2.
    发明授权
    Reducing line to line capacitance using oriented dielectric films 失效
    使用定向电介质薄膜降低线间电容

    公开(公告)号：US06927180B2

    公开(公告)日：2005-08-09

    申请号：US10306066

    申请日：2002-11-27

    申请人： Kevin O'Brien ,  David Gracias

    发明人： Kevin O'Brien ,  David Gracias

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H05K1/02 ,  H01L21/31

    CPC分类号： H01L23/5329 ,  H01L21/76829 ,  H01L2924/0002 ,  H05K1/024 ,  H01L2924/00

    摘要： By exposing dielectrics to a strong electric field, anisotropic characteristics may be introduced into the dielectric. This may result in the dielectric having different dielectric constants in different directions. As integrated circuits scale, importance of line to line capacitance in one plane increases. Thus, in some embodiments, the dielectric constant of the oriented dielectric may be lower in the plane that controls line to line capacitance.

    摘要翻译： 通过将电介质暴露于强电场，各向异性特性可能被引入到电介质中。 这可能导致电介质在不同方向上具有不同的介电常数。 随着集成电路规模的扩大，一个平面线对线电容的重​​要性增加。 因此，在一些实施例中，取向电介质的介电常数可以在控制线对电容的平面中较低。

    Reducing line to line capacitance using oriented dielectric films
    3.
    发明授权
    Reducing line to line capacitance using oriented dielectric films 失效
    使用定向电介质薄膜降低线间电容

    公开(公告)号：US07518244B2

    公开(公告)日：2009-04-14

    申请号：US11103394

    申请日：2005-04-11

    申请人： Kevin O'Brien ,  David Gracias

    发明人： Kevin O'Brien ,  David Gracias

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/5329 ,  H01L21/76829 ,  H01L2924/0002 ,  H05K1/024 ,  H01L2924/00

    摘要： By exposing dielectrics to a strong electric field, anisotropic characteristics may be introduced into the dielectric. This may result in the dielectric having different dielectric constants in different directions. As integrated circuits scale, importance of line to line capacitance in one plane increases. Thus, in some embodiments, the dielectric constant of the oriented dielectric may be lower in the plane that controls line to line capacitance.

    摘要翻译： 通过将电介质暴露于强电场，各向异性特性可能被引入到电介质中。 这可能导致电介质在不同方向上具有不同的介电常数。 随着集成电路规模的扩大，一个平面线对线电容的重​​要性增加。 因此，在一些实施例中，定向电介质的介电常数可以在控制线对电容的平面中较低。

    Identity assurance method
    4.
    发明授权
    Identity assurance method 有权

    公开(公告)号：US10664576B2

    公开(公告)日：2020-05-26

    申请号：US15657201

    申请日：2017-07-23

    申请人： Darrin Edelman ,  Austin O'Brion ,  Kevin O'Brien

    发明人： Darrin Edelman ,  Austin O'Brion ,  Kevin O'Brien

    IPC分类号： G06F21/31 ,  G06F21/32 ,  G06F21/34 ,  G06Q20/40 ,  G06F21/33 ,  G06F21/45 ,  G06F3/0481

    摘要： Provided are computer-implemented methods and systems used in assuring a person's identity that include the steps of receiving from the person one or more identifying statements and receiving from the person authorization to access one or more identity sources on which the person is registered. Data is then extracted from one or more of the identity sources to corroborate the one or more identifying statements, and the data aggregated to provide first and second scores, the first score representing factors that tend to affirm the person's identifying statements and the second score representing factors that tend to disaffirm the person's identifying statements. Optionally, the scores are displayed in a graphical user interface.

    CONNECTOR
    6.
    发明申请
    CONNECTOR 审中-公开
    连接器

    公开(公告)号：US20090278346A1

    公开(公告)日：2009-11-12

    申请号：US12116473

    申请日：2008-05-07

    申请人： Kevin O'Brien

    发明人： Kevin O'Brien

    IPC分类号： F16L55/00

    CPC分类号： F16L37/091

    摘要： A connector comprises a body having a passage therethrough for fluid flow and a female portion for receiving by a slip fit a tubular member. Gripping means are placed in the passage in the female portion for gripping the tubular member and is configured for preventing the tubular member from rotating. A retainer retains the gripping means in place and a seal prevents leakage.

    摘要翻译： 连接器包括具有用于流体流动的通道的主体和用于通过滑动配合接收管状构件的阴部分。 夹持装置放置在阴部分中的通道中，用于夹持管状构件，并且构造成用于防止管状构件旋转。 保持器将夹持装置保持在适当位置，并且密封件防止泄漏。

    SPACE-BASED LEVER ARM CORRECTION IN NAVIGATIONAL SYSTEMS EMPLOYING SPOT BEAMS
    8.
    发明申请
    SPACE-BASED LEVER ARM CORRECTION IN NAVIGATIONAL SYSTEMS EMPLOYING SPOT BEAMS 有权
    采用SPOT BEAMS的导航系统中的基于空间的双臂校正

    公开(公告)号：US20070080859A1

    公开(公告)日：2007-04-12

    申请号：US11247641

    申请日：2005-10-10

    申请人： Jonathan Tekawy ,  Kevin O'Brien

    发明人： Jonathan Tekawy ,  Kevin O'Brien

    IPC分类号： H04B7/185

    CPC分类号： G01S19/02 ,  G01S19/07 ,  H01Q1/125 ,  H01Q3/005

    摘要： A method and apparatus for estimating a lever arm correction between the wide beam antenna and the spot beam antenna in a navigational satellite system is disclosed. A prescribed satellite maneuver is used to increase the accuracy of the predicted satellite attitude in determining the lever arm, and lever arm corrections are provided to navigation receivers using curve fit coefficients to permit long range estimates and to minimize data transmission requirements.

    摘要翻译： 公开了一种用于在导航卫星系统中估计宽波束天线和点波束天线之间的杠杆臂校正的方法和装置。 使用规定的卫星机动来增加在确定杠杆臂时所预测的卫星姿态的准确度，并且使用曲线拟合系数将导轨接收器提供杠杆臂校正，以允许长距离估计并且最小化数据传输要求。

    Amine-free deposition of metal-nitride films
    9.
    发明申请
    Amine-free deposition of metal-nitride films 有权
    无氮化物沉积金属氮化物膜

    公开(公告)号：US20070075427A1

    公开(公告)日：2007-04-05

    申请号：US11240005

    申请日：2005-09-30

    申请人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

    发明人： Adrien Lavoie ,  Valery Dubin ,  Juan Dominguez ,  Kevin O'Brien ,  Steven Johnston ,  John Peck ,  David Thompson ,  David Peters

    IPC分类号： H01L29/40 ,  H01L21/44

    CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

    摘要翻译： 形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。