公开(公告)号：US07418024B2

公开(公告)日：2008-08-26

申请号：US11496422

申请日：2006-08-01

申请人： Ki-sung Kim ,  Taek Kim ,  Heon-su Jeon

发明人： Ki-sung Kim ,  Taek Kim ,  Heon-su Jeon

IPC分类号： H01S3/091

CPC分类号： B82Y20/00 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18383 ,  H01S5/2009 ,  H01S5/3406 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353

摘要： Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.

摘要翻译： 提供了一种垂直外腔表面发射激光器（VECSEL），包括：形成在基板上的底部DBR反射镜; 形成在底部DBR层上的RPG层; 形成在RPG镜上的封盖层; 将泵浦光束照射到覆盖层的表面上的光泵; 以及安装在对应于底部DBR反射镜的堆叠层的外表面上的外部空腔镜。 RPG层包括：周期性地形成在驻波的节点上并由具有比泵浦光束的能带宽度大的材料形成的多个第一阻挡层; 以及多个增益层，包括由InGaAs形成的多个QW层，并且设置在第一阻挡层之间，以及多个第二阻挡层，设置在QW层的上部和下部。

公开(公告)号：US20070036187A1

公开(公告)日：2007-02-15

申请号：US11496422

申请日：2006-08-01

申请人： Ki-sung Kim ,  Taek Kim ,  Heon-su Jeon

发明人： Ki-sung Kim ,  Taek Kim ,  Heon-su Jeon

IPC分类号： H01S5/00 ,  H01S3/093

CPC分类号： B82Y20/00 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18383 ,  H01S5/2009 ,  H01S5/3406 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353

摘要： Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.

摘要翻译： 提供了一种垂直外腔表面发射激光器（VECSEL），包括：形成在基板上的底部DBR反射镜; 形成在底部DBR层上的RPG层; 形成在RPG镜上的封盖层; 将泵浦光束照射到覆盖层的表面上的光泵; 以及安装在对应于底部DBR反射镜的堆叠层的外表面上的外部空腔镜。 RPG层包括：周期性地形成在驻波的节点上并由具有比泵浦光束的能带宽度大的材料形成的多个第一阻挡层; 以及多个增益层，包括由InGaAs形成的多个QW层，并设置在第一阻挡层之间，以及多个第二阻挡层，设置在QW层的上部和下部。

公开(公告)号：US20060189002A1

公开(公告)日：2006-08-24

申请号：US11330566

申请日：2006-01-11

申请人： Jang-seok Ma ,  Heon-su Jeon ,  Soo-hyung Choi ,  In-ho Lee ,  Fu Wang

发明人： Jang-seok Ma ,  Heon-su Jeon ,  Soo-hyung Choi ,  In-ho Lee ,  Fu Wang

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L29/82

CPC分类号： G01N21/6428 ,  B82Y20/00

摘要： Provided are a biochip platform for biochemically analyzing a sample such as DNA or protein, including a dielectric particle layer, and an optical assay apparatus including the same. The biochip platform includes the dielectric particle layer uniformly formed on a substrate. The particle uniformity of the dielectric particle layer enables good wavelength separation of fluorescence signal, and the large surface area of the dielectric particle layer guarantees better amplification efficiency of fluorescence signal. Furthermore, the biochip platform shows good economical efficiency due to easy fabrication process, and is particularly useful in an optical assay apparatus for analyzing a biochemical sample due to good assay efficiency.

摘要翻译： 提供了用于生物化学分析诸如DNA或蛋白质的样品（包括电介质颗粒层）的生物芯片平台和包括其的光学测定装置。 生物芯片平台包括均匀地形成在基板上的电介质颗粒层。 电介质颗粒层的粒子均匀性使得荧光信号的波长分离良好，并且电介质颗粒层的大的表面积保证了荧光信号的更好的放大效率。 此外，生物芯片平台由于易于制造工艺而显示出良好的经济效率，并且在由于良好的测定效率分析生物化学样品的光学测定装置中特别有用。

公开(公告)号：US06754245B2

公开(公告)日：2004-06-22

申请号：US10055999

申请日：2002-01-28

申请人： Yong-jo Park ,  Kyoung-ho Ha ,  Heon-su Jeon ,  Si-hyun Park

发明人： Yong-jo Park ,  Kyoung-ho Ha ,  Heon-su Jeon ,  Si-hyun Park

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/34333

摘要： A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.

摘要翻译： 提供一种GaN系列表面发射激光二极管及其制造方法。 GaN系列表面发射激光二极管包括：有源层; 在有源层的相对侧上的p型和n型材料层; 形成在n型材料层上的第一分布布拉格反射体（DBR）层; n型电极，通过n型材料层与有源层连接，使得电压施加到有源层进行激光; 在p型材料层上形成有与第一DBR层对准的部分中的激光输出窗口的间隔物，该间隔物足够厚以使空穴有效地迁移到有源层的中心部分; 形成在激光输出窗口上的第二DBR层; 以及通过p型材料层连接到有源层的p型电极，使得向活性层施加电压用于激光。 激光输出窗口的形状使得可以补偿由间隔物的形成引起的激光束的衍射。

公开(公告)号：US06661829B2

公开(公告)日：2003-12-09

申请号：US10160654

申请日：2002-06-03

申请人： Heon-su Jeon

发明人： Heon-su Jeon

IPC分类号： H01S308

CPC分类号： H01S5/18388 ,  H01S5/0656 ,  H01S5/142 ,  H01S5/18311 ,  H01S5/32341 ,  H01S5/327 ,  H01S2301/166

摘要： Provided is a vertical cavity surface emitting laser (VCSEL) including a feedback member which feeds a portion of light externally emitted from a resonator for generating and amplifying a laser beam, back into the resonator by reflecting the same and acts as a concave mirror for the resonator. The VCSEL operates predominantly in the single fundamental transverse mode, emitting a laser output having a peak intensity at its center. The VCSEL can be manufactured by a simple process and provides excellent reproducibility.

摘要翻译： 提供了一种垂直腔表面发射激光器（VCSEL），其包括反馈构件，反馈构件将从谐振器外部发射的光的一部分馈送以产生和放大激光束，通过反射而返回到谐振器中，并用作用于 谐振器。 VCSEL主要以单个基本横向模式工作，发射在其中心具有峰值强度的激光输出。 VCSEL可以通过简单的工艺制造，并提供优异的再现性。

公开(公告)号：US07888694B2

公开(公告)日：2011-02-15

申请号：US11525096

申请日：2006-09-22

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US06990134B2

公开(公告)日：2006-01-24

申请号：US10816822

申请日：2004-04-05

申请人： Yong-jo Park ,  Kyoung-ho Ha ,  Heon-su Jeon ,  Si-hyun Park

发明人： Yong-jo Park ,  Kyoung-ho Ha ,  Heon-su Jeon ,  Si-hyun Park

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/34333

摘要： A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.

摘要翻译： 提供一种GaN系列表面发射激光二极管及其制造方法。 GaN系列表面发射激光二极管包括：有源层; 在有源层的相对侧上的p型和n型材料层; 形成在n型材料层上的第一分布布拉格反射体（DBR）层; n型电极，通过n型材料层与有源层连接，使得电压施加到有源层进行激光; 在p型材料层上形成有与第一DBR层对准的部分中的激光输出窗口的间隔物，该间隔物足够厚以使空穴有效地迁移到有源层的中心部分; 形成在所述激光输出窗口上的第二DBR层; 以及通过p型材料层连接到有源层的p型电极，使得向活性层施加电压用于激光。 激光输出窗口的形状使得可以补偿由间隔物的形成引起的激光束的衍射。

公开(公告)号：US08013354B2

公开(公告)日：2011-09-06

申请号：US11737479

申请日：2007-04-19

申请人： Jeong-wook Lee ,  Jin-seo Im ,  Bok-ki Min ,  Kwang-hyeon Baik ,  Heon-su Jeon

发明人： Jeong-wook Lee ,  Jin-seo Im ,  Bok-ki Min ,  Kwang-hyeon Baik ,  Heon-su Jeon

IPC分类号： H01L29/22

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

摘要翻译： 具有多重图案结构的半导体发光器件大大提高了光提取效率。 半导体发光器件包括衬底和半导体层，有源层和形成在衬底上的电极层，在衬底和半导体层之间限定第一波纹结构的第一图案和限定第二波纹状的第二图案 结构上第一个波纹结构的第一个图案。

公开(公告)号：US07662614B2

公开(公告)日：2010-02-16

申请号：US11330566

申请日：2006-01-11

申请人： Jang-seok Ma ,  Heon-su Jeon ,  Soo-hyung Choi ,  In-ho Lee ,  Fu Wang

发明人： Jang-seok Ma ,  Heon-su Jeon ,  Soo-hyung Choi ,  In-ho Lee ,  Fu Wang

IPC分类号： C12M1/34

CPC分类号： G01N21/6428 ,  B82Y20/00

摘要： Provided are a biochip platform for biochemically analyzing a sample such as DNA or protein, including a dielectric particle layer, and an optical assay apparatus including the same. The biochip platform includes the dielectric particle layer uniformly formed on a substrate. The particle uniformity of the dielectric particle layer enables good wavelength separation of fluorescence signal, and the large surface area of the dielectric particle layer guarantees better amplifications efficiency of fluorescence signal. Furthermore, the biochip platform shows good economical efficiency due to easy fabrication process, and is particularly useful in an optical assay apparatus for analyzing a biochemical sample due to good assay efficiency.

摘要翻译： 提供了用于生物化学分析诸如DNA或蛋白质的样品（包括电介质颗粒层）的生物芯片平台和包括其的光学测定装置。 生物芯片平台包括均匀地形成在基板上的电介质颗粒层。 电介质颗粒层的粒子均匀性使得荧光信号的波长分离良好，并且电介质颗粒层的大的表面积保证了荧光信号的更好的放大效率。 此外，生物芯片平台由于易于制造工艺而显示出良好的经济效率，并且在由于良好的测定效率分析生物化学样品的光学测定装置中特别有用。

公开(公告)号：US20070187698A1

公开(公告)日：2007-08-16

申请号：US11525096

申请日：2006-09-22

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。