公开(公告)号：US07189684B2

公开(公告)日：2007-03-13

申请号：US10476717

申请日：2003-03-04

申请人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Kazusei Tamai ,  Katsuyoshi Ina

发明人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Kazusei Tamai ,  Katsuyoshi Ina

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammonium hydroxides and tetraalkyl ammonium chlorides, hydrochloric acid, and water, and contains substantially no iron. The second polishing composition of the present invention includes a predetermined amount of fumed silica, a predetermined amount of at least one component selected from periodic acids and salts thereof, a tetraalkyl ammonium salt represented by the following general formula (1), at least one component selected from ethylene glycol and propylene glycol, and water. The pH of the second polishing composition is greater than or equal to 1.8 and is less than 4.0.

摘要翻译： 能够令人满意地研磨半导体的抛光组合物。 本发明的第一种抛光组合物包括二氧化硅，选自周期酸及其盐中的至少一种组分，至少一种选自四烷基氢氧化铵和四烷基氯化铵的组分，盐酸和水，并且基本上不含铁。 本发明的第二抛光组合物包含预定量的热解法二氧化硅，预定量的选自周期酸及其盐中的至少一种组分，由以下通式（1）表示的四烷基铵盐，至少一种组分 选自乙二醇和丙二醇，和水。 第二抛光组合物的pH值大于或等于1.8，小于4.0。

公开(公告)号：US06849099B2

公开(公告)日：2005-02-01

申请号：US10674318

申请日：2003-09-30

申请人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.

摘要翻译： 提供了减少腐蚀并用于半导体器件制造工艺的最终抛光步骤中的抛光组合物。 抛光组合物含有胶体二氧化硅，高碘酸化合物，氨，硝酸铵和水，其pH为1.8〜4.0。

公开(公告)号：US06838016B2

公开(公告)日：2005-01-04

申请号：US09985490

申请日：2001-11-05

申请人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Koji Ohno ,  Katsuyoshi Ina

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C09K13/00 ,  C09K13/06 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

摘要： A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one member selected from the group consisting of guinaldic acid and its derivatives, (d) at least one member selected from the group consisting of glycine, α-alanine, histidine and their derivatives, (e) at least one member selected from the group consisting of benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的组分的研磨剂，（b） 聚亚烷基亚胺，（c）选自桂皮酸及其衍生物的至少一种，（d）选自甘氨酸，α-丙氨酸，组氨酸及其衍生物中的至少一种，（e） 选自苯并三唑及其衍生物的组中的至少一种，（f）过氧化氢和（g）水。

公开(公告)号：US06814766B2

公开(公告)日：2004-11-09

申请号：US10214176

申请日：2002-08-08

申请人： Koji Ohno ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Koji Ohno ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212

摘要： A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid, (c) at least one pH controlling agent selected from the group consisting of ammonia, potassium hydroxide, sodium hydroxide, ammonium periodate, potassium periodate and sodium periodate, and (d) water.

摘要翻译： 一种用于研磨至少具有钨膜和绝缘膜的半导体器件的抛光组合物，其包含以下组分（a）至（d）：（a）二氧化硅，（b）高碘酸，（c）至少一种 选自氨，氢氧化钾，氢氧化钠，高碘酸铵，高碘酸钾和高碘酸钠的pH控制剂，和（d）水。

公开(公告)号：US06679929B2

公开(公告)日：2004-01-20

申请号：US10046394

申请日：2002-01-16

申请人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, (c) at least one basic compound selected from the group consisting of an ammonium salt, an alkali metal salt, an alkaline earth metal salt, an organic amine compound and a quaternary ammonium salt, (d) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (e) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (f) hydrogen peroxide, and (g) water.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（g）：（a）至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆和氧化钛的研磨剂，（b）脂族羧酸 ，（c）至少一种选自铵盐，碱金属盐，碱土金属盐，有机胺化合物和季铵盐的碱性化合物，（d）至少一种选择的研磨加速化合物 来自由柠檬酸，草酸，酒石酸，甘氨酸，α-丙氨酸和组氨酸组成的组，（e）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（f）过氧化氢 ，（g）水。

公开(公告)号：US06565619B1

公开(公告)日：2003-05-20

申请号：US10263846

申请日：2002-10-04

申请人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

发明人： Hiroshi Asano ,  Kenji Sakai ,  Katsuyoshi Ina

IPC分类号： C09K314

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

摘要： A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole, tolyltriazole and their derivatives, and (e) water.

摘要翻译： 1.一种抛光组合物，其特征在于，具有：（a）具有带正电荷的表面的胶体二氧化硅，（b）具有带负电荷的表面的胶体二氧化硅，（c）至少一种选自硝酸，盐酸，硫酸，乳酸 酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑，甲苯基三唑及其衍生物的防腐剂，以及 （e）水。

公开(公告)号：US06440186B1

公开(公告)日：2002-08-27

申请号：US09928996

申请日：2001-08-15

申请人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Hiroshi Asano ,  Tadahiro Kitamura ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  C23F3/06

摘要： A polishing composition comprising: (a) an abrasives (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm.

摘要翻译： 一种抛光组合物，包括：（a）研磨剂（b）与铜离子形成螯合物的化合物（c）向铜层提供保护层形成功能的化合物，（d）过氧化氢，和（e） 水，其中组分（a）的研磨剂的初级粒度在50至120nm的范围内。

公开(公告)号：US06773476B2

公开(公告)日：2004-08-10

申请号：US10200173

申请日：2002-07-23

申请人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

发明人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06

摘要： A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

摘要翻译： 一种抛光组合物，其包含：（a）至少一种选自二氧化硅和氧化铝的研磨剂，（b）至少一种选自聚环氧乙烷，聚环氧丙烷，聚氧乙烯烷基醚 ，聚氧亚丙基烷基醚，聚氧乙烯聚氧丙烯烷基醚和具有C = C三键的聚氧化烯加成聚合物，由式（1）表示：其中R 1至R 6各自为H或C 1-10烷基，X Y是乙烯氧基或丙烯氧基，m和n分别为1〜20的正数，（c）至少一种选自柠檬酸，草酸，酒石酸 ，甘氨酸，α-丙氨酸和组氨酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（e）过氧化氢和（f）水。

公开(公告)号：US06626967B2

公开(公告)日：2003-09-30

申请号：US10283087

申请日：2002-10-30

申请人： Shinichiro Takami ,  Katsuyoshi Ina

发明人： Shinichiro Takami ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a mixture thereof; and (c) water; wherein the concentration of each of the elements included in Groups 2A, 3A, 4A, 5A, 6A, 7A, 8A, 1B and 2B, lanthanoid and actinoid, and the concentration of each element of aluminum, gallium, indium, thallium, tin, lead, bismuth, fluorine and chlorine, are at most 100 ppb in the polishing composition, respectively.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（c）：（a）胶态二氧化硅;（b）至少一种选自碳酸氢铵，碳酸氢锂，碳酸氢钾，碳酸氢钠及其混合物的碳酸氢盐; 和（c）水;其中包括在2A，3A，4A，5A，6A，7A，8A，1B和2B族中的每种元素的浓度，镧系元素和锕系元素，以及铝，镓， 铟，铊，锡，铅，铋，氟和氯分别在抛光组合物中为100ppb以下。

公开(公告)号：US6100010A

公开(公告)日：2000-08-08

申请号：US255757

申请日：1999-02-23

申请人： Katsuyoshi Ina

发明人： Katsuyoshi Ina

IPC分类号： G03F7/26 ,  G03F7/095 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/095

摘要： A photoresist includes a three-layer structure of a lower layer, a middle layer and an upper layer, wherein the lower and upper layers are photoresist layers, the lower layer is sensitive to a light having a longer wavelength than a light to which the upper layer is sensitive, and the middle layer is a light-shielding film formed of an organic substance that has a transmittance such that the lower layer is not exposed to lights to which the lower and upper layers are sensitive.

摘要翻译： 光致抗蚀剂包括下层，中间层和上层的三层结构，其中下层和上层是光致抗蚀剂层，下层对波长比波长长的光敏感，所述光比上层 层是敏感的，中间层是由有机物质形成的遮光膜，该有机物质具有使下层不暴露于下层和上层敏感的光的透射率。