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    Nitride semiconductor substrate and method of producing same
    1.
    发明授权
    Nitride semiconductor substrate and method of producing same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US07772585B2

    公开(公告)日：2010-08-10

    申请号：US11446955

    申请日：2006-06-06

    申请人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    发明人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC分类号： H01L31/00 ,  C30B25/00 ,  H01L21/00

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

    摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

    摘要翻译： 通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，产生在暴露部分“Pgr”上覆盖有小面的凸面小丘，从而形成氮化物半导体晶体衬底; 覆盖部分，不掩埋小面，保持凸面小丘在＆Pgr; 和网络凹面，不考虑小平面上的位错，形成凹陷凹陷，形成缺陷积聚区H，减小了小平面山丘的位错，改善了小丘到低缺陷密度单晶区Z，产生了坚固的 氮化物晶体，并将氮化物晶体切割和研磨成镜状氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

    NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME
    3.
    发明申请
    NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME 有权
    氮化物半导体基板及其制造方法

    公开(公告)号：US20090155989A1

    公开(公告)日：2009-06-18

    申请号：US12388983

    申请日：2009-02-19

    申请人： Koji UEMATSU ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    发明人： Koji UEMATSU ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC分类号： H01L21/20

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

    摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts not burying the facets, maintaining the convex facet hills on Π and the network concavities on excluding dislocations in the facet hills down to the outlining concavities on forming a defect accumulating region H on decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

    摘要翻译： 氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面 部分不包括小平面上的位错，直到减少小平面山丘的位错，改善小丘到低缺陷 密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

    Nitride semiconductor substrate and method of producing same
    4.
    发明申请
    Nitride semiconductor substrate and method of producing same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US20060272572A1

    公开(公告)日：2006-12-07

    申请号：US11446955

    申请日：2006-06-06

    申请人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    发明人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

    摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts γ, not burying the facets, maintaining the convex facet hills on Π and the network concavities on γ, excluding dislocations in the facet hills down to the outlining concavities on γ, forming a defect accumulating region H on γ, decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

    摘要翻译： 氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面 部分伽马，不掩埋小平面，保持Pi上的凸面小丘和γ上的网格凹面，不考虑小平面丘上的位错，直到伽马的轮廓凹面，在伽马上形成缺陷累积区H，减小刻面上的位错 小丘，改善小缺陷密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。