公开(公告)号：US20230197408A1

公开(公告)日：2023-06-22

申请号：US18170289

申请日：2023-02-16

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01J37/321 ,  H01L21/0214 ,  H01L21/02274 ,  C23C16/345 ,  C23C16/45557 ,  H01J37/32183 ,  H01J37/32651 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supplier through which a process gas is supplied to the process chamber; a plasma generator provided so as to protrude into the process chamber, constituted by a coil and an insulator, and configured to generate a plasma of the process gas in the process chamber; and an adjuster capable of adjusting a gap distance between the coil and the insulator.

公开(公告)号：US20220277938A1

公开(公告)日：2022-09-01

申请号：US17560684

申请日：2021-12-23

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tomoki IMAMURA ,  Kazuyuki OKUDA ,  Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32 ,  H01L21/263

Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a gas supplier configured to supply a gas into the process chamber; a first plasma electrode unit including a first reference electrode applied with a reference potential and at least one selected from the group of a first application electrode and a second application electrode applied with high-frequency power, the first plasma electrode unit configured to plasma-excite the gas; and a second plasma electrode unit including a second reference electrode applied with a reference potential and a third application electrode applied with high-frequency power, the third application electrode having a length different from a length of the first application electrode or the second application electrode, and the second plasma electrode unit configured to plasma-excite the gas.

公开(公告)号：US20240006164A1

公开(公告)日：2024-01-04

申请号：US18468825

申请日：2023-09-18

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32532 ,  H01J37/32174 ,  H01J37/32449 ,  H01L21/3065

Abstract: According to one aspect of the technique of the present disclosure, there is provided an electrode structure capable of generating a plasma, including: a primary electrode to which an appropriate electric potential is applied; and a secondary electrode to which a reference potential is applied, wherein an area of the primary electrode is set to be greater than an area of the secondary electrode, and the primary electrode is configured as an integrated structure.

公开(公告)号：US20220181125A1

公开(公告)日：2022-06-09

申请号：US17681393

申请日：2022-02-25

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32

Abstract: There is provided is a technique that includes: a process chamber in which at least one substrate is processed; and at least one buffer chamber in which plasma is formed, wherein the at least one buffer chamber includes at least two application electrodes of different lengths to which high frequency electric power is applied, and a reference electrode subjected to a reference potential.

公开(公告)号：US20210180185A1

公开(公告)日：2021-06-17

申请号：US17186498

申请日：2021-02-26

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Daisuke HARA ,  Takashi YAHATA ,  Tsuyoshi TAKEDA

IPC: C23C16/44 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455

Abstract: There is provided a technique that includes: a substrate support configured to support at least one substrate; a reaction tube configured to accommodate the at least one substrate support and process the at least one substrate; and an inert gas supply system configured to supply an inert gas into the reaction tube, wherein the inert gas supply system includes a nozzle including at least one first ejection hole configured to eject the inert gas toward a center of the at least one substrate and at least one second ejection hole configured to eject the inert gas toward an inner wall of the reaction tube.

公开(公告)号：US20190186000A1

公开(公告)日：2019-06-20

申请号：US16269319

申请日：2019-02-06

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Tetsuaki INADA ,  Takuya JODA ,  Daisuke HARA

IPC: C23C16/44 ,  H01L21/67 ,  H01L21/673 ,  C23C16/40 ,  C23C16/458

CPC classification number: C23C16/4404 ,  C23C16/406 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4586 ,  H01L21/31 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67309

Abstract: There is provided a substrate processing apparatus including a process chamber in which a substrate is accommodated, a processing gas supply system configured to introduce a processing gas containing hydrogen peroxide into the process chamber and an exhaust system configured to exhaust an interior of the process chamber, wherein at least one selected from the group of the process chamber, the processing gas supply system, and the exhaust system includes a metal member, the metal member exposed to the processing gas or a liquid generated by liquefying the processing gas is made of a material containing an iron element, and a surface of a plane of the metal members, which is exposed to the processing gas or the liquid, is formed of a layer containing iron oxide which is formed by performing a baking process on the metal member.

公开(公告)号：US20240412987A1

公开(公告)日：2024-12-12

申请号：US18808738

申请日：2024-08-19

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01L21/67 ,  H01J37/32

Abstract: There is provided a substrate processing apparatus, comprising: a reaction tube in which a substrate is processed; and a plurality of electrodes including at least one first electrode to which a predetermined potential is applied and at least one second electrode to which a reference potential is applied. Two or more of the at least one first electrode or the at least one second electrode are arranged side-by-side in a cross sectional view perpendicular to a vertical direction of the reaction tube.

公开(公告)号：US20240312764A1

公开(公告)日：2024-09-19

申请号：US18436809

申请日：2024-02-08

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H03H7/38 ,  H01J2237/327

Abstract: There is provided a technique capable of sufficiently stabilizing a generation of a plasma by avoiding an improper impedance matching. There is provided a technique that includes: an input structure configured to receive a high frequency power, an output structure configured to output the high frequency power; a matching structure containing a variable inductor with a variable inductance; and a variable inductance regulator capable of varying the inductance of the variable inductor.

公开(公告)号：US20240047180A1

公开(公告)日：2024-02-08

申请号：US18025621

申请日：2021-09-09

Applicant: Kokusai Electric Corporation

Inventor： Daisuke HARA ,  Takashi YAHATA ,  Tsuyoshi TAKEDA

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32743 ,  H01J2237/3387

Abstract: There is provided a technique that includes a process chamber in which a substrate is processed, a substrate retainer on which a plurality of substrates are stacked in multiple stages, a plasma generator generating plasma inside the process chamber, and a magnet generating a magnetic field inside the process chamber.

公开(公告)号：US20230307212A1

公开(公告)日：2023-09-28

申请号：US18171015

申请日：2023-02-17

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA ,  Hiroshi NAKAJO ,  Iichiro TSUCHIKURA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32541 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32522

Abstract: According to the present disclosure, there is provided a technique capable of performing a substrate processing more uniformly. According to one aspect thereof, there is provided an electrode structure capable of generating a plasma, including: a first electrode group constituted by: at least one first electrode to which an electric potential is applied; at least one second electrode whose length is different from that of the first electrode and to which an electric potential is applied; and at least one third electrode to which a reference potential is applied; and a second electrode group constituted by: at least one fourth electrode to which an electric potential is applied; at least one fifth electrode whose length is different from that of the fourth electrode and to which an electric potential is applied; and at least one sixth electrode to which the reference potential is applied.