公开(公告)号：US20130135758A1

公开(公告)日：2013-05-30

申请号：US13687098

申请日：2012-11-28

Applicant: Korea Institute of Science and Technology

Inventor： Seong Il KIM ,  Young Hwan KIM ,  Won Jun CHOI ,  Young Tae KIM

IPC: G02B3/08

CPC classification number: G02B3/08 ,  F24S23/00 ,  F24S23/31 ,  F24S40/52 ,  F24S50/80 ,  H01L31/054 ,  H01L31/0543 ,  Y02E10/43 ,  Y02E10/44 ,  Y02E10/52

Abstract: Provided is a concentration ratio controlling apparatus for concentration type solar cells that may adjust an opened area by mounting, to a lower portion of a solar simulator, a concentration ratio controlling apparatus combined with an adjustment unit capable of controlling the opened area and thereby adjusting the adjustment unit, and as a result, may adjust the quantity of light, that is, a concentration ratio, that is irradiated toward the surface of a solar cell disposed below a condenser by varying the quantity of light incident through a Fresnel lens disposed in a lower portion of the condenser.

Abstract translation: 提供了一种浓缩型太阳能电池的浓度比控制装置，其可以通过将太阳能模拟器的下部安装到与能够控制开放面积的调节单元组合的浓度比控制装置来调节开放面积，从而调整开度 调节单元，结果可以通过改变通过布置在一个电容器中的菲涅耳透镜入射的光量来调节照射到设置在电容器下方的太阳能电池的表面的光量，即浓度比 冷凝器的下部。

公开(公告)号：US20180082900A1

公开(公告)日：2018-03-22

申请号：US15631309

申请日：2017-06-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon KIM ,  Hyung-jun KIM ,  Jae-Phil SHIM ,  Seong Kwang KIM ,  Won Jun CHOI

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/7813 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/30617

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

公开(公告)号：US20140217441A1

公开(公告)日：2014-08-07

申请号：US13906618

申请日：2013-05-31

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong SONG ,  Eunhye LEE ,  Min Hwan BAE ,  Won Jun CHOI ,  Jae Jin YOON ,  Il KI HAN

IPC: H01L31/0216 ,  H01L33/44

CPC classification number: H01L31/02168 ,  H01L33/44 ,  Y02E10/50

Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.

Abstract translation: 在本公开的一方面，公开了使用自组装纳米结构的抗反射涂层的制造方法，其包括通过液滴外延在基板上形成第一金属液滴，在第一非金属上沉积第一金属液滴 形成第一金属液滴，并通过沉积的第一非金属和第一金属液滴的自组装形成第一纳米复合晶体。

公开(公告)号：US20210077952A1

公开(公告)日：2021-03-18

申请号：US16695185

申请日：2019-11-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kyung Guen SONG ,  Won Jun CHOI ,  Jae Won SHIN ,  Jin-soo CHO ,  Dasom WANG

IPC: B01D61/36 ,  B01D1/00 ,  C02F1/44

Abstract: The present disclosure to an apparatus for membrane distillation using a solar absorber and a heat pump, in which in the implementation of a membrane distillation process for producing treated water using a temperature difference between raw water and a coolant, raw water is heated using the solar absorber with improved heat collection efficiency, and through this, the treated water production efficiency of the membrane distillation process is improved.

公开(公告)号：US20160343810A1

公开(公告)日：2016-11-24

申请号：US14854221

申请日：2015-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon KIM ,  Daemyeong GEUM ,  Min Su PARK ,  Won Jun CHOI

IPC: H01L29/205 ,  H01L21/78 ,  H01L29/165 ,  H01L21/683 ,  H01L21/18

CPC classification number: H01L21/78 ,  H01L21/185 ,  H01L21/6835 ,  H01L29/267 ,  H01L29/66219 ,  H01L29/861 ,  H01L31/0304 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/544

Abstract: Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

Abstract translation: 公开了一种制造半导体器件的方法，其包括提供具有第一衬底和位于第一衬底上的图案化的第一III-V族化合物层的模板，在图案化的第一III-V族化合物层上形成牺牲层， 外延生长，通过外延生长在牺牲层上形成第二III-V族化合物层，将由硅制成的第二衬底接合到第二III-V族化合物层上，以及将第二III-V族化合物层和第二III-V族化合物层分离 通过去除牺牲层从模板的衬底。

公开(公告)号：US20130330083A1

公开(公告)日：2013-12-12

申请号：US13744564

申请日：2013-01-18

Applicant: Yong Gwan Kim ,  KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong SONG ,  Il Ki HAN ,  Won Jun CHOI ,  Jung Il LEE

IPC: H04B10/80

CPC classification number: H04B10/80 ,  H04B13/02

Abstract: An underwater communication apparatus for performing an optical communication with an external device under water includes: a current control unit that modulates first data to be transmitted to the external device into a first current; and a light transmitting unit that transmits light with a wavelength of 450 to 500 nm corresponding to the first current to the external device.

Abstract translation: 一种用于与水下的外部设备进行光通信的水下通信设备包括：电流控制单元，其将要发送到外部设备的第一数据调制成第一电流; 以及将与第一电流对应的波长为450〜500nm的光透射到外部装置的发光单元。

公开(公告)号：US20190316968A1

公开(公告)日：2019-10-17

申请号：US16451736

申请日：2019-06-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Seung Hyub BAEK ,  Tae Hyeon KIL ,  Sanghyeon KIM ,  Won Jun CHOI ,  Jeong Min BAIK ,  Ki-Suk LEE

IPC: G01J5/22 ,  H01L49/02 ,  H01C17/12 ,  H01C7/00

Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in monoclinic VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

公开(公告)号：US20180335341A1

公开(公告)日：2018-11-22

申请号：US15926366

申请日：2018-03-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Seung Hyub BAEK ,  Tae Hyeon KIL ,  Sanghyeon KIM ,  Won Jun CHOI ,  Jeong Min BAIK ,  Ki-Suk LEE

IPC: G01J1/42 ,  G01J5/20

CPC classification number: G01J1/42 ,  G01J5/024 ,  G01J5/046 ,  G01J5/20

Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.

公开(公告)号：US20140030872A1

公开(公告)日：2014-01-30

申请号：US13668526

申请日：2012-11-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Kyu HA ,  Su Youn KIM ,  Il Ki HAN ,  Jin Dong SONG ,  Won Jun CHOI

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/00 ,  H01L21/02546 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/7613 ,  Y10S977/84

Abstract: Disclosed is a nano-structure manufacturing method which includes: forming a first semiconductor composite layer, a semiconductor quantum structure layer, a second semiconductor composite layer, and a semiconductor quantum dot layer on a substrate in order; thermally treating the semiconductor quantum dot layer so that quantum dots of the semiconductor quantum dot layer are aggregated; and performing an etching process by using the aggregated quantum dots as a mask.

Abstract translation: 公开了一种纳米结构制造方法，其包括：依次在基板上形成第一半导体复合层，半导体量子结构层，第二半导体复合层和半导体量子点层; 热处理半导体量子点层，使半导体量子点层的量子点聚集; 并且通过使用聚合的量子点作为掩模来执行蚀刻处理。