摘要:
A pump is provided having a pump chamber that is capable of changing a volume thereof by a diaphragm, an inlet passage permitting an operating fluid to flow into the pump chamber; an outlet passage permitting an operating fluid to flow out from the pump chamber; and a check valve provided on the inlet passage. An innertance value of the inlet passage is smaller than the innertance value of the outlet passage. The diaphragm is driven by a frequency f (Hz) satisfying the following formula: f ≥ 0.26 X L S wherein the innertance value of the outlet passage is L (kg/m4), the displacement from an upper end point to a bottom end point of the diaphragm is X (m), and the cross section area of the pump chamber is S (m2).
摘要:
Since many valves are used, pressure loss is large, resulting in low reliability of a pump. Even when the period of increasing and decreasing the volume of a pump chamber is long, and a piezoelectric element is used as an actuator that drives a diaphragm, a driving operation cannot be performed at a high frequency, or a proper flow rate cannot be realized under a high load pressure. In accordance with the invention, the combined inertance value of an entrance passage used to make working fluid flow into a pump chamber is smaller than the combined inertance value of an exit passage used to make the working fluid flow out from the pump chamber. A fluid resistance member is provided at the entrance passage in which fluid resistance when the working fluid flows into the pump chamber is smaller than fluid resistance when the working fluid flows out of the pump chamber.
摘要:
A pump is provided having a pump chamber that is capable of changing a volume thereof by a diaphragm, an inlet passage permitting an operating fluid to flow into the pump chamber; an outlet passage permitting an operating fluid to flow out from the pump chamber; and a check valve provided on the inlet passage. An inertance value of the inlet passage is smaller than the inertance value of the outlet passage. The diaphragm is driven by a frequency f (Hz) satisfying the following formula: f ≥ 0.26 X L S wherein the inertance value of the outlet passage is L (kg/m4), the displacement from an upper end point to a bottom end point of the diaphragm is X (m), and the cross section area of the pump chamber is S (m2).
摘要:
In a ceramic capacitor, first and second electrode terminals each include a bonded-to-substrate portion, a first bonded-to-electrode portion bonded to a first edge of one of first and second external electrodes, a second bonded-to-electrode portion bonded to a second edge of the one of first and second external electrodes and disposed at a distance from the first bonded-to-electrode portion in the first directions, and a connecting portion connecting the first and second bonded-to-electrode portions and the bonded-to-substrate portion. W1/W0 is about 0.3 or more, and h/L is about 0.1 or more.
摘要:
Provided is a roller bearing device, which is suitable for preventing misdetection of a rotation sensor when a moment load is applied. A thin motor 100 includes a cross roller bearing 14 having an inner ring 14a and an outer ring 14b, a stator 22 supported by the inner ring 14a, a rotor 12 supported by the outer ring 14b, a motor unit 16 that applies rotation torque to the rotor 12, and a resolver 30 that detects a rotation angle position of the rotor 12. The resolver 30, the cross roller bearing 14, and the motor unit 16 are arranged in the recited order from the radially inner side on a radially identical plane.
摘要:
A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other. In this case, a recess is formed in the vicinity of a portion of the sealing layer to be brought into contact with the sealing frame so that a bump, generated from the sealing layer which is deformed in the joining step, is prevented from protruding toward the functional unit.
摘要:
An organosilicon compound which is obtained by subjecting a compound (A), a compound (B) and a compound (C) to hydrosilylation reaction: (A) silicone and/or silsesquioxane that has two or more Si—H groups per one molecule and has a molecular weight of 100 to 500,000; (B) silicone and/or silsesquioxane that has two or more alkenyl groups per one molecule and has a molecular weight of 100 to 500,000; and (C) a compound that has one or more epoxy or oxetanyl group and an alkenyl group having 2 to 18 carbon atoms per one molecule.
摘要:
A semiconductor device includes a plurality of MOS transistors, wherein each of the MOS transistors has a drain region, a pair of source regions sandwiching therebetween the drain region, and a pair of normal gates each overlying a space between the drain region and a corresponding one of the source regions. A plurality of dummy gates are provided each between adjacent two of the MOS transistors. The dummy gate electrodes are maintained at an equi-potential with the adjacent drain regions. MOS transistors include a row of pMOS transistors and nMOS transistors, wherein each of pMOS transistors and a corresponding nMOS transistor configure a CMOS gate, and a plurality of CMOS gates configure a ring oscillator.
摘要:
The semiconductor device includes a resistor cell that includes a diffused layer resistor, a P-well contact and an N-well contact. The diffused layer resistor is arranged on a semiconductor substrate and is formed by a diffused layer. The P-well contact surrounds an outer rim of the diffused layer resistor and is formed by another diffused layer. The N-well contact is arranged surrounding the outer rim of the P-well contact and is formed by a further diffused layer. Both the P-well and N-well contacts are partitioned into contact portions. Control electrode layer portions are arranged between neighboring contact sections of the P-well contact so the contact sections of the P-well contact and the control electrode layer portions alternate. Control electrode layer portions are arranged between neighboring contact sections of the N-well contact so that the contact sections of the N-well contact and the control electrode layer portions alternate with one another.