公开(公告)号：US5367179A

公开(公告)日：1994-11-22

申请号：US975282

申请日：1992-11-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L23/48

CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

摘要翻译： 薄膜晶体管包括形成在绝缘基板上的栅极电极，覆盖栅极电极和绝缘基板的栅极绝缘膜，形成在栅极绝缘膜上的i型半导体层，以及电极和漏极电极 分别连接到i型半导体层的两端。 栅电极由含有Ti和Ta等高熔点金属和氧或氮的铝合金构成。

公开(公告)号：US5441618A

公开(公告)日：1995-08-15

申请号：US147129

申请日：1993-11-02

申请人： Kunihiro Matsuda ,  Hisatoshi Mori

发明人： Kunihiro Matsuda ,  Hisatoshi Mori

IPC分类号： C25D17/00 ,  C25D11/02

CPC分类号： C25D17/00 ,  C25D11/005 ,  C25D17/001

摘要： Arranged in a series are an electrolyte tank capable of holding one of a number of substrates, each substrate having a conducting film thereon, and a cathode so that the cathode and substrate face each other in an electrolyte, an anodizing chamber for anodizing the substrate, a pretreatment chamber for calcining a photoresist mask put on part of the conducting film, and a post-treatment chamber for washing and drying the anodized substrate. A substrate transportation mechanism is provided for serially transporting the substrates one by one from the pretreatment chamber to the post-treatment chamber via the anodizing chamber. In the anodizing chamber described above, a formation voltage is increased to a value such that an oxide film with a desired thickness is formed so that the value of a current flowing through an aluminum alloy film as the conducting film is kept constant with the current density ranging from 3.0 mA/cm.sup.2 to 15.0 mA/cm.sup.2.

摘要翻译： 一系列是能够保持多个基板中的一个的每个基板，其上具有导电膜的阴极和阴极，使得阴极和基板在电解质中彼此面对，用于阳极氧化基板的阳极氧化室， 用于煅烧放置在导电膜的一部分上的光致抗蚀剂掩模的预处理室，以及用于洗涤和干燥阳极氧化基板的后处理室。 提供了一种基板输送机构，用于通过阳极氧化室将基板逐个地从预处理室逐次输送到后处理室。 在上述阳极氧化室中，将形成电压提高到使得形成具有期望厚度的氧化物膜的值，使得流过作为导电膜的铝合金膜的电流值以电流密度保持恒定 范围为3.0mA / cm 2至15.0mA / cm 2。

公开(公告)号：US5352907A

公开(公告)日：1994-10-04

申请号：US856509

申请日：1992-03-24

申请人： Kunihiro Matsuda ,  Hiromitsu Ishii ,  Naohiro Konya

发明人： Kunihiro Matsuda ,  Hiromitsu Ishii ,  Naohiro Konya

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L27/01 ,  H01L27/13 ,  H01L29/78

CPC分类号： H01L29/66765 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78636 ,  H01L29/78669

摘要： A thin-film transistor includes a gate electrode and a semiconductor film consisting of amorphous silicon, formed on an insulating substrate to oppose each other through a gate insulating film, ohmic contact layers composed of n-type amorphous silicon doped with an impurity, electrically insulated from each other on the semiconductor film, and electrically connected to the semiconductor film, and source and drain electrodes arranged on the semiconductor film with a predetermined gap to form a channel portion, and electrically connected to the semiconductor film through the ohmic contact layers. The gate electrode and a portion surrounding the gate electrode are entirely formed into a continuous metal oxide film by a chemical reaction.

摘要翻译： 薄膜晶体管包括栅极电极和由非晶硅组成的半导体膜，其形成在绝缘基板上，通过栅极绝缘膜彼此相对，由掺杂有杂质的n型非晶硅构成的欧姆接触层，电绝缘 在半导体膜上彼此电连接并且与半导体膜电连接，并且以预定间隙布置在半导体膜上的源电极和漏电极以形成沟道部分，并且通过欧姆接触层电连接到半导体膜。 栅电极和围绕栅电极的部分通过化学反应完全形成为连续的金属氧化物膜。

公开(公告)号：US08692458B2

公开(公告)日：2014-04-08

申请号：US13246206

申请日：2011-09-27

申请人： Hiroshi Matsumoto ,  Kunihiro Matsuda

发明人： Hiroshi Matsumoto ,  Kunihiro Matsuda

IPC分类号： H01L29/08

CPC分类号： H01L27/3262 ,  G09G3/325 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0866 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/3265 ,  H01L2227/323

摘要： A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element and an insulating layer provided between the first and third electrodes; a first drive transistor disposed on a first side of the first electrode and having a gate electrode; and a second drive transistor disposed on a second side of the first electrode and having a gate electrode connected to the gate electrode of the first drive transistor via the third electrode.

摘要翻译： 发光器件包括：发光元件，包括第一电极，与第一电极相对的第二电极和设置在第一电极和第二电极之间的发光层; 具有形成在与发光元件重叠的位置的第三电极和设置在第一和第三电极之间的绝缘层的电容器; 第一驱动晶体管，设置在第一电极的第一侧上并具有栅电极; 以及第二驱动晶体管，其设置在所述第一电极的第二侧上，并具有通过所述第三电极连接到所述第一驱动晶体管的栅电极的栅电极。

公开(公告)号：US5334859A

公开(公告)日：1994-08-02

申请号：US939458

申请日：1992-09-02

申请人： Kunihiro Matsuda

发明人： Kunihiro Matsuda

IPC分类号： G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/60 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01

CPC分类号： G02F1/13458 ,  G02F1/1368 ,  H01L21/76897 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/78669 ,  G02F1/1345

摘要： A thin-film transistor panel comprises an insulative substrate, a plurality of thin-film transistor elements arranged at predetermined intervals on said substrate, and wirings electrically connecting the thin-film transistor elements characterized in that the thin-film transistor element comprises a gate electrode, a gate-insulating film, an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween, an n-type semiconductor layer, source and drain electrodes electrically connected the portions of the i-type semiconductor layer through the n-type semiconductor layer, and an anodically oxidized film located between the source and drain electrodes to electrically isolate, said source and drain electrodes.

摘要翻译： 薄膜晶体管面板包括绝缘衬底，在所述衬底上以预定间隔布置的多个薄膜晶体管元件和电连接薄膜晶体管元件的布线，其特征在于，薄膜晶体管元件包括栅电极 栅极绝缘膜，i型半导体层，通过其间的栅极绝缘膜与栅电极相对，n型半导体层，通过n型电连接i型半导体层的部分的源极和漏极， 以及阳极氧化膜，位于源电极和漏电极之间以电隔离所述源电极和漏电极。

公开(公告)号：US5243202A

公开(公告)日：1993-09-07

申请号：US4641

申请日：1993-01-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L21/0217 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.

摘要翻译： 薄膜晶体管包括形成在玻璃基板上的栅极电极，基本上在基板的整个表面上形成以覆盖栅电极的栅极绝缘膜，将栅极绝缘膜上的非单晶硅半导体膜， 覆盖栅电极; 以及在半导体膜上间隔规定距离并与半导体膜电连接的漏电极和源电极，以形成晶体管的沟道区。 栅电极由含钛的铝制成。

公开(公告)号：US08410482B2

公开(公告)日：2013-04-02

申请号：US13075411

申请日：2011-03-30

申请人： Kunihiro Matsuda ,  Hiroshi Matsumoto ,  Yukikazu Tanaka

发明人： Kunihiro Matsuda ,  Hiroshi Matsumoto ,  Yukikazu Tanaka

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L21/02 ,  H01L31/062 ,  G11C21/00

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2300/0842 ,  H01L27/124

摘要： Disclosed in a semiconductor device including a substrate, a first transistor, a second transistor, and a first source electrode and a first drain electrode of the first transistor are arranged along a first direction and a second source electrode and a second drain electrode of the second transistor are arranged in a reverse order of the first source electrode and the first drain electrode along the first direction, the first source electrode and the second source electrode are connected by a source connecting wiring, the first drain electrode and the second drain electrode are connected by a drain connecting wiring, a first gate electrode and a second gate electrode are connected by a gate connecting wiring and the source connecting wiring and the drain connecting wiring are provided at positions except a region overlapped with the first gate electrode, the second gate electrode and the gate connecting wiring.

摘要翻译： 公开在包括第一晶体管的衬底，第一晶体管，第二晶体管以及第一晶体管的第一源极和第一漏电极的半导体器件中，沿着第一方向布置第二源电极和第二漏电极， 晶体管沿着第一方向以与第一源电极和第一漏电极相反的顺序排列，第一源电极和第二源电极通过源极连接布线连接，第一漏电极和第二漏极连接 通过漏极连接布线，第一栅电极和第二栅极通过栅极连接布线连接，源极连接布线和漏极连接布线设置在除了与第一栅电极，第二栅电极 和门连接接线。

公开(公告)号：US20120074409A1

公开(公告)日：2012-03-29

申请号：US13246206

申请日：2011-09-27

申请人： Hiroshi MATSUMOTO ,  Kunihiro Matsuda

发明人： Hiroshi MATSUMOTO ,  Kunihiro Matsuda

IPC分类号： H01L29/786

CPC分类号： H01L27/3262 ,  G09G3/325 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0866 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/3265 ,  H01L2227/323

摘要： A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element and an insulating layer provided between the first and third electrodes; a first drive transistor disposed on a first side of the first electrode and having a gate electrode; and a second drive transistor disposed on a second side of the first electrode and having a gate electrode connected to the gate electrode of the first drive transistor via the third electrode.

摘要翻译： 发光器件包括：发光元件，包括第一电极，与第一电极相对的第二电极和设置在第一电极和第二电极之间的发光层; 具有形成在与发光元件重叠的位置的第三电极和设置在第一和第三电极之间的绝缘层的电容器; 第一驱动晶体管，设置在第一电极的第一侧上并具有栅电极; 以及第二驱动晶体管，其设置在所述第一电极的第二侧上，并具有通过所述第三电极连接到所述第一驱动晶体管的栅电极的栅电极。

公开(公告)号：US08130355B2

公开(公告)日：2012-03-06

申请号：US12239722

申请日：2008-09-26

申请人： Kunihiro Matsuda ,  Norihisa Yamada

发明人： Kunihiro Matsuda ,  Norihisa Yamada

IPC分类号： G02F1/1343

CPC分类号： G02F1/13394 ,  G02F1/1339

摘要： A liquid crystal display device includes a first substrate having a common electrode thereon; a second substrate coupled to the first substrate, the second substrate having a connection electrode facing a portion of the common electrode on the first substrate, the connection electrode including a lower electrode made of metal, an insulating layer formed over the lower electrode and having a plurality of contact holes, and an upper electrode made of oxide conductor over the insulating layer, the upper electrode being electrically connected to the lower electrode via the plurality of contact holes; and a plurality of conductive gap members disposed between said portion of the common electrode and the upper electrode of the connection electrode to electrically connect said portion of the common electrode to the upper electrode of the connection electrode.

摘要翻译： 液晶显示装置包括其上具有公共电极的第一基板; 耦合到所述第一基板的第二基板，所述第二基板具有面对所述第一基板上的所述公共电极的一部分的连接电极，所述连接电极包括由金属制成的下电极，形成在所述下电极上的绝缘层， 多个接触孔，以及在所述绝缘层上的由氧化物导体制成的上电极，所述上电极经由所述多个接触孔电连接到所述下电极; 以及设置在公共电极的所述部分和连接电极的上部电极之间的多个导电间隙部件，以将公共电极的所述部分电连接到连接电极的上部电极。

公开(公告)号：US5733420A

公开(公告)日：1998-03-31

申请号：US694210

申请日：1996-08-08

申请人： Kunihiro Matsuda ,  Hisatoshi Mori

发明人： Kunihiro Matsuda ,  Hisatoshi Mori

IPC分类号： C25D17/00 ,  C25D11/02

CPC分类号： C25D17/00 ,  C25D11/005 ,  C25D17/001

摘要： Arranged in a series are an electrolyte tank capable of holding one of a number of substrates, each substrate having a conducting film thereon, and a cathode so that the cathode and substrate face each other in an electrolyte, an anodizing chamber for anodizing the substrate, a pretreatment chamber for calcining a photoresist mask put on part of the conducting film, and a post-treatment chamber for washing and drying the anodized substrate. A substrate transportation mechanism is provided for serially transporting the substrates one by one from the pretreatment chamber to the post-treatment chamber via the anodizing chamber. In the anodizing chamber described above, a formation voltage is increased to a value such that an oxide film with a desired thickness is formed so that the value of a current flowing through an aluminum alloy film as the conducting film is kept constant with the current density ranging from 3.0 mA/cm.sup.2 to 15.0 mA/cm.sup.2.