摘要:
An alignment method useable with an original having a pattern and a substrate having a surface area on which the pattern of the original is printed. The alignment method comprises detecting plural marks, calculating plural times, the amount of rotational deviation on the basis of different combinations of marks, calculating the quantity of rotational correction of the original and the substrate by using the computed rotational deviations, and aligning on the basis of the calculated quantity of the rotational deviation.
摘要:
An alignment method for use in an exposure apparatus for printing a pattern of an original onto different surface areas of a substrate, the alignment method comprising the steps of: providing alignment marks around the pattern of the original and placing the original on an original supporting stage; providing a reference mark on an X-Y stage for supporting the substrate and being movable in X and Y directions, and moving the X-Y stage so as to place the reference mark at those positions, in sequence, which correspond to the alignment marks of the original, respectively, and which are preset in respect to a stage coordinate system; detecting, in sequence, positional errors of the alignment marks of the original with respect to the corresponding set positions, respectively, by using the reference mark and through the movement of the X-Y stage, wherein the positional errors are detected by use of positional error detectors which are provided to be associated with the alignment marks of the original, respectively; calculating a rotational error of the original with respect to the stage coordinate system, in .theta. direction, by using the positional errors; and rotationally moving the original supporting table in the .theta. direction so as to correct the rotational error.
摘要:
An exposure apparatus for printing a pattern of a mask to a wafer includes a mask moving mechanism for moving the mask; a wafer moving mechanism or moving the wafer along a predetermined movement coordinate; a measuring system for measuring an error with respect to the movement coordinate, resulting from the movement of the mask by the mask moving mechanism; and a memorizing device for memorizing a data table prepared on the basis of the error measured by the measuring system; wherein the wafer moving mechanism uses the data in the data table when it moves the wafer for positioning of the wafer with respect to the mask.
摘要:
An exposure apparatus includes a light source for exposing a wafer through a mask; a light blocking device being movable and effective to block light from the light source to limit an exposure zone; a positional deviation detecting system for detecting positional deviation between the mask and the wafer; and a drive control system for moving the light blocking device to execute position control therefor, on the basis of a detection signal from the positional deviation detecting system.
摘要:
A position detecting apparatus usable for aligning mask and a semiconductor wafer, wherein a laser beam produced by a semiconductor laser is projected through a predetermined optical system to alignment marks formed on the mask and the wafer, and the light reflected by the marks are detected by an accumulation type sensor to produce an electrical signal, from which the relative positional relation between the mask and the wafer are detected on the basis of the electrical signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor is controlled. In this apparatus, the beam emitting strength of the semiconductor laser is made constant, and the control of thee amount of light incident on the accumulation sensor is effected by controlling the operation period of the semiconductor laser. In addition, the actuation timing of the semiconductor laser is advanced from the accumulation start of the accumulation type sensor by the time required for the semiconductor laser to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor is precise.
摘要:
A method of detecting the positional relationship between a first object and a second object is disclosed which includes projecting a first light through a convex lens mark of the first object and a concave lens pattern of the second object onto a first plane and projecting a second light through a concave lens mark of the first object and a convex lens pattern of the second object onto the first plane, wherein a first spacing between positions of incidence of the first light and the second light on the first plane increases with displacement of the second object relative to the first object in a predetermined direction. The method also includes projecting a third light through a concave lens mark of the first object and a convex lens pattern of the second object onto a second plane and projecting a fourth light through a convex lens mark of the first object and a concave lens pattern of the second object onto the second plane, wherein a second spacing between positions of incidence of the third light and the fourth light on the second plane decreases with displacement of the second object relative to the first object in the predetermined direction. The method also includes determining a reference for the detection of a position of the first object relative to a position of the second object on the basis of the first spacing and the second spacing as they become substantially equal to each other.
摘要:
An alignment system for aligning a mask and a wafer into a predetermined positional relationship uses alignment marks provided on the mask and the water. In this system, light from a light source is directed to the alignment marks of the mask and the wafer and, then, the light from these alignment marks is detected by an accumulation type photoelectric converting device, for alignment of the mask and the wafer. The accumulation time of the photoelectric converting device is controlled to be sufficiently longer than or to be equal to a multiple, by an integral number, of the period of relative and natural vibration of the mask and the wafer. This makes it possible to reduce the effect of the relative vibration of the mask and the wafer upon the alignment result and, therefore, makes it possible to enhance the alignment precision.
摘要:
A light source portion having an acousto-optic element produces a laser beam of two light components having a frequency difference .DELTA.w and having registered polarization directions. The laser beam is subsequently divided by a half mirror. One of the divided laser beams is detected by a photoelectric detector as reference light, and a corresponding signal is applied to a synchronism detector. The other laser beam is projected by a scanning optical system to the surface of, e.g., an original to be examined to scan the same. At the position on the surface irradiated by the scanning light spot, the laser beam is modulated at a beat frequency .DELTA.w on the basis of optical heterodyne interference. A synchronism detector detects a signal corresponding to the scattered light from a particle or defect on the surface being examined, in synchronism with the frequency of the reference light, whereby the particle or defect can be detected with a good signal-to-noise ratio.
摘要:
Disclosed is an inspection method and apparatus: wherein (i) first light having a first state of polarization and a first wavelength, and (ii) second light having a second state of polarization, different from the first state of polarization, and a second wavelength, different from the first wavelength are produced; at least the first light is projected to a position of inspection; and heterodyne interference light produced on the basis of the second light and light scattered at the inspection position and having its state of polarization changed, by the scattering, from the first state of polarization, is detected.
摘要:
A first Savart plate and an object to be measured are arranged on the light path of a Zeeman light source. The object to be measured is constructed of a diffraction grating on a mask and a diffraction grating on a wafer. A second Savart plate, a deflection plate and a photoelectric detector are sequentially arranged in the light path for the diffracted beams from the measured object. The output of the photoelectric detector is connected to a phase-difference unit to detect the phase difference between two beat signals. Herein, the light is split into two beams by the Savart plate. After a diffraction is caused by the diffraction gratings, thereafter, the beams are re-synthesized by the Savart plates. The two beams travel on the same light path, thereby improving a measurement accuracy.