摘要:
A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.
摘要:
A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.
摘要:
A wafer bumping method comprising the following steps of. A wafer having fields is provided. The wafer having at least one wafer identification character formed thereon within one or more of the fields. A dry film resist is formed over the wafer. Portions of the dry film resist are selectively exposed field by field using a mask whereby the mask is shifted over the one or more fields containing the at least one wafer identification character so that the one or more fields containing the at least one wafer identification character is double exposed after the mask shift so that all of the one or more fields containing the at least one wafer identification character is completely exposed. The selectively exposed dry film resist is developed to remove the non-exposed portions of the dry film resist. Solder is plated over the wafer exposed by the removed portions of the dry film resist to form solder bumps within the fields not containing at least one wafer identification character so that the at least one wafer identification character is readable by optical character recognition.
摘要:
A peristaltic pump assembly for pumping a fluid medium from a fluid source through a tubing having a compressible pumping section, which assembly comprises a housing including at least one support wall; a drive shaft journalled substantially loosely to the support wall; a plurality of cam plates eccentrically mounted on the drive shaft in a helical pattern along the drive shaft and rotatable together with the drive shaft for, during a rotation of the drive shaft, driving finger plates sequentially in a direction perpendicular to the drive shaft to cause respective finger tips of the finger plates to engage the pumping section thereby producing a moving zone of occlusion along the pumping section for pumping the fluid medium; and an adjustment mechanism mounted on the support wall for adjustably displacing the drive shaft together with the cam plates and the finger plates in a direction perpendicular thereto. The adjustment mechanism comprises a shaft bearing plate mounted on the support wall for movement in a linear direction parallel to the direction of movement of each finger plate and through which the drive shaft extends rotatably, and a drive member for adjustably moving the bearing plate in the linear direction.
摘要:
A wire-bonded semiconductor device with an improved wire-arrangement scheme is proposed, which can help minimize abnormal wire sweep during encapsulation process. Among the bonding wires on the semiconductor device, those located in corners would be mostly susceptible to abnormal wire sweep, particularly a high-loop bonding wire that is located in immediate adjacency to a low-loop bonding wire located in one corner of the wire-bonded semiconductor device. To solve this problem, the low-loop bonding wire that is located in immediate adjacency to the sweep-susceptible high-loop bonding wire is erected substantially to the same loop height as the high-loop bonding wire, so that it can serve as a shield to the sweep-susceptible high-loop bonding wire against the flow of injected resin during encapsulation process, thus preventing abnormal wire sweep. Alternatively, if a pair of low-loop bonding wires are located in immediate adjacency to the sweep-susceptible high-loop bonding wire and are bonded to a common double-wire bond pad, these two low-loop bonding wires are arranged in an intercrossed manner, which can also help reduce the impact of the injected resin on the sweep-susceptible high-loop bonding wire, thus preventing abnormal wire sweep. The prevention of abnormal wire sweep allows the finished semiconductor device to be more assured in quality and reliability.