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    Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby
    2.
    发明授权
    Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby 有权
    由此制造氮化物系半导体及氮化物系半导体的制造方法

    公开(公告)号：US06844569B1

    公开(公告)日：2005-01-18

    申请号：US10831190

    申请日：2004-04-26

    申请人： Kyu Han Lee ,  Sun Woon Kim ,  Je Won Kim

    发明人： Kyu Han Lee ,  Sun Woon Kim ,  Je Won Kim

    IPC分类号： H01L21/3065 ,  C30B29/60 ,  H01L21/20 ,  H01L21/205 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/007 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/22

    摘要： The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.

    摘要翻译： 本发明涉及一种氮化物系半导体的制造方法及其制造的氮化物系半导体。 在本发明的制造方法中，在蓝宝石基板上形成自组织金属层。 具有自组织金属层的蓝宝石衬底被加热，使得自组织金属聚结成纳米级簇以不规则地暴露蓝宝石衬底的上表面。 使用自组织金属簇作为掩模对蓝宝石衬底的暴露部分进行等离子体蚀刻，以在蓝宝石衬底上形成纳米尺度的不均匀结构。 将所得结构湿式蚀刻以除去自组织的金属簇。 形成在蓝宝石衬底上的纳米尺度不均匀结构减小了蓝宝石衬底和氮化物基半导体层之间的应力和结果的位错，并且增加了其之间的量子效率。

    Semiconductor light-emitting device with improved light extraction efficiency
    3.
    发明授权
    Semiconductor light-emitting device with improved light extraction efficiency 有权
    具有提高光提取效率的半导体发光器件

    公开(公告)号：US07692201B2

    公开(公告)日：2010-04-06

    申请号：US11098802

    申请日：2005-04-05

    申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

    发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22

    摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

    摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

    Semiconductor light-emitting device with improved light extraction efficiency
    4.
    发明授权
    Semiconductor light-emitting device with improved light extraction efficiency 有权
    具有提高光提取效率的半导体发光器件

    公开(公告)号：US08455906B2

    公开(公告)日：2013-06-04

    申请号：US13286881

    申请日：2011-11-01

    申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

    发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

    IPC分类号： H01L31/0232 ,  H01L31/0236

    CPC分类号： H01L33/22

    摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

    摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

    Semiconductor light-emitting device with improved light extraction efficiency
    5.
    发明授权
    Semiconductor light-emitting device with improved light extraction efficiency 有权
    具有提高光提取效率的半导体发光器件

    公开(公告)号：US08071994B2

    公开(公告)日：2011-12-06

    申请号：US12624106

    申请日：2009-11-23

    申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

    发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22

    摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

    摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

    Nitride semiconductor light emitting device having electrostatic discharge (ESD) protection capacity
    9.
    发明授权
    Nitride semiconductor light emitting device having electrostatic discharge (ESD) protection capacity 有权
    氮化物半导体发光器件具有静电放电（ESD）保护能力

    公开(公告)号：US07173288B2

    公开(公告)日：2007-02-06

    申请号：US11053906

    申请日：2005-02-10

    申请人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

    发明人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

    IPC分类号： H01L29/22

    CPC分类号： H01L27/15 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.

    摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。

    Nitride semiconductor device and method for making same
    10.
    发明申请
    Nitride semiconductor device and method for making same 审中-公开
    氮化物半导体器件及其制造方法

    公开(公告)号：US20100112742A1

    公开(公告)日：2010-05-06

    申请号：US12655438

    申请日：2009-12-30

    申请人： Kyu Han Lee ,  Je Won Kim ,  Dong Joon Kim

    发明人： Kyu Han Lee ,  Je Won Kim ,  Dong Joon Kim

    IPC分类号： H01L21/20

    CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2004 ,  H01S5/3095 ,  H01S5/3412 ,  H01S5/34333

    摘要： A method of forming a nitride semiconductor device is disclosed. An n-type GaN layer is formed on a substrate. A self assembled nitride semiconductor quantum dot layer is formed on the n-type GaN layer by growing InyGa(1-y)N (0.3≦y≦1) directly on the n-type GaN layer. A resonance tunnel layer is formed on the n-type GaN layer to cover the nitride semiconductor quantum dot layer. An active layer is formed on the resonance tunnel layer. A p-type nitride semiconductor layer is formed on the active layer. The active layer contains a quantum well layer and a quantum barrier layer, and the resonance tunnel layer has a band gap energy greater than that of the quantum well layer.

    摘要翻译： 公开了一种形成氮化物半导体器件的方法。 在基板上形成n型GaN层。 通过在n型GaN层上直接生长In y Ga（1-y）N（0.3＆lt; nlE; y＆nlE; 1），在n型GaN层上形成自组装氮化物半导体量子点层。 谐振隧道层形成在n型GaN层上以覆盖氮化物半导体量子点层。 在谐振隧道层上形成有源层。 在有源层上形成p型氮化物半导体层。 有源层包含量子阱层和量子阻挡层，并且谐振隧道层的带隙能量大于量子阱层的带隙能量。