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    Quantum dot light emitting device having quantum dot multilayer
    2.
    发明授权
    Quantum dot light emitting device having quantum dot multilayer 有权
    量子点发光器件具有量子点多层

    公开(公告)号：US08330142B2

    公开(公告)日：2012-12-11

    申请号：US12708664

    申请日：2010-02-19

    申请人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

    发明人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

    IPC分类号： H01L21/02

    CPC分类号： H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

    摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

    摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带电平。

    Optoelectronic devices
    3.
    发明授权
    Optoelectronic devices 有权
    光电器件

    公开(公告)号：US08847240B2

    公开(公告)日：2014-09-30

    申请号：US13408279

    申请日：2012-02-29

    申请人： Dae-young Chung ,  Kyung-sang Cho ,  Tae-ho Kim ,  Byoung-lyong Choi

    发明人： Dae-young Chung ,  Kyung-sang Cho ,  Tae-ho Kim ,  Byoung-lyong Choi

    IPC分类号： H01L29/06 ,  H01L27/15 ,  H01L51/52 ,  H01L51/00

    CPC分类号： H01L51/52 ,  H01L51/0094

    摘要： An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.

    摘要翻译： 提供了一种光电子器件，其包括在有源层和电荷传输层之间形成偶极矩的元件。 光电子器件可以包括在第一电极和第二电极之间的有源层，第一电极和有源层之间的第一电荷传输层，以及有源层和第一电荷传输层之间的偶极子层。 第二电荷输送层可以进一步设置在第二电极和有源层之间。 第二偶极子层可以进一步设置在第二电荷传输层和有源层之间。