公开(公告)号：US11299572B2

公开(公告)日：2022-04-12

申请号：US16463616

申请日：2017-11-29

申请人： LG Chem, Ltd.

发明人： Je Gwon Lee ,  No Jin Park ,  Jung Keun Kim ,  Eun Young Choi ,  Se Jin Ku ,  Mi Sook Lee ,  Hyung Ju Ryu ,  Sung Soo Yoon

IPC分类号： C08F230/08 ,  C08F220/30 ,  C08F293/00 ,  C08J5/18 ,  C08F212/14

摘要： The present application can provide a block copolymer and a use thereof. The block copolymer of the present application can have excellent self-assembly properties or phase separation characteristics and excellent etching selectivity, and various other functions as required can be freely imparted thereto.

公开(公告)号：US11174360B2

公开(公告)日：2021-11-16

申请号：US16346669

申请日：2017-11-29

申请人： LG Chem, Ltd.

发明人： Mi Sook Lee ,  Se Jin Ku ,  No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Hyung Ju Ryu ,  Eun Young Choi

IPC分类号： G03F7/16 ,  G03F7/20 ,  C09D153/00 ,  C08F293/00 ,  B81C1/00 ,  C08J5/18 ,  G03F7/40 ,  C09D133/14

摘要： The present application relates to a block copolymer and a use thereof. The present application can provide a laminate which is capable of forming a highly aligned block copolymer on a substrate and thus can be effectively applied to production of various patterned substrates, and a method for producing a patterned substrate using the same.

公开(公告)号：US20190292286A1

公开(公告)日：2019-09-26

申请号：US16465357

申请日：2017-11-29

申请人： LG Chem, Ltd.

发明人： Se Jin Ku ,  Mi Sook Lee ,  Hyung Ju Ryu ,  Sung Soo Yoon ,  No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Eun Young Choi

IPC分类号： C08F220/18 ,  C08F220/22 ,  C08F220/38 ,  C08F228/02 ,  C08F293/00 ,  C08F212/08 ,  C08L53/00

摘要： A polymer composition, methods and a use thereof are disclosed herein. The polymer composition having excellent self-assembly properties and capable of forming a vertical orientation structure even on a surface that no neutral treatment is performed, where the vertically oriented self-assembled structure can be effectively formed in a short time.

公开(公告)号：US20190278172A1

公开(公告)日：2019-09-12

申请号：US16462707

申请日：2017-12-13

申请人： LG Chem, Ltd.

发明人： Mi Sook Lee ,  Se Jin Ku ,  No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Eun Young Choi ,  Hyung Ju Ryu ,  Sung Soo Yoon

IPC分类号： G03F7/00 ,  H01L21/027 ,  H01L21/033

摘要： The present application relates to a method for preparing a patterned substrate. The method may be applied to a process of manufacturing devices such as, for example, electronic devices and integrated circuits, or other applications, such as manufacture of integrated optical systems, guidance and detection patterns of magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads or organic light emitting diodes, and the like, and may also be used to build a pattern on a surface used in manufacture of discrete track media, such as integrated circuits, bit-patterned media and/or magnetic storage devices such as hard drives.

公开(公告)号：US20190256637A1

公开(公告)日：2019-08-22

申请号：US16346333

申请日：2017-11-29

申请人： LG Chem, Ltd.

发明人： No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Sung Soo Yoon ,  Se Jin Ku ,  Mi Sook Lee ,  Eun Young Choi ,  Hyung Ju Ryu

IPC分类号： C08F299/02 ,  C08F220/18 ,  C08J5/18 ,  C08F220/28 ,  C08G61/04

摘要： The present application may provide a block copolymer and a use thereof. The block copolymer of the present application has excellent self-assembly properties or phase separation characteristics, to which various functions to be required can also be freely imparted.

公开(公告)号：US10240035B2

公开(公告)日：2019-03-26

申请号：US15515293

申请日：2015-09-30

申请人： LG Chem, Ltd.

发明人： Je Gwon Lee ,  No Jin Park ,  Jung Keun Kim ,  Se Jin Ku ,  Mi Sook Lee ,  Eun Young Choi ,  Sung Soo Yoon ,  Hyung Ju Ryu

IPC分类号： C08J7/12 ,  C08L53/00 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08J5/18 ,  B05D1/00 ,  B05D3/00 ,  C08F293/00 ,  C09D153/00 ,  G03F7/09 ,  G03F7/16 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  C08F32/06 ,  C08F299/02 ,  C08G61/08 ,  C08F2/14 ,  G03F7/00 ,  G03F7/30 ,  C08L53/02 ,  C08G61/12 ,  B81C1/00 ,  B82Y40/00

摘要： The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

公开(公告)号：US10184021B2

公开(公告)日：2019-01-22

申请号：US15173673

申请日：2016-06-05

申请人： LG Chem, Ltd.

发明人： Je Gwon Lee ,  Jung Keun Kim ,  No Jin Park ,  Mi Sook Lee ,  Se Jin Ku ,  Eun Young Choi ,  Sung Soo Yoon

IPC分类号： C08F293/00 ,  C08L53/00 ,  G03F7/00

摘要： The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

公开(公告)号：US10153173B2

公开(公告)日：2018-12-11

申请号：US15547688

申请日：2016-02-02

申请人： LG Chem, Ltd.

发明人： Se Jin Ku ,  Eun Young Choi ,  Sung Soo Yoon ,  No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Mi Sook Lee

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/3065

摘要： The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block copolymer thin films that have etching-resisting properties different from each other. The present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and which has one or more periods, by overcoming the limit of the prior art, which cannot implement a vertical pore structure through wet etching.

公开(公告)号：US20180033638A1

公开(公告)日：2018-02-01

申请号：US15547688

申请日：2016-02-02

申请人： LG Chem, Ltd.

发明人： Se Jin Ku ,  Eun Young Choi ,  Sung Soo Yoon ,  No Jin Park ,  Jung Keun Kim ,  Je Gwon Lee ,  Mi Sook Lee

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31133 ,  B81C1/00087 ,  B81C2201/0149 ,  H01L21/02118 ,  H01L21/02356 ,  H01L21/0271 ,  H01L21/30655 ,  H01L21/31055 ,  H01L21/67

摘要： The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block copolymer thin films that have etching-resisting properties different from each other. The present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and which has one or more periods, by overcoming the limit of the prior art, which cannot implement a vertical pore structure through wet etching.

公开(公告)号：US20160304654A1

公开(公告)日：2016-10-20

申请号：US15101915

申请日：2014-12-08

申请人： LG CHEM, LTD.

发明人： Je Gwon Lee ,  Jung Keun Kim ,  No Jin Park ,  Sung Soo Yoon

IPC分类号： C08F293/00 ,  G03F7/00

CPC分类号： C08F293/005 ,  B81C1/00428 ,  B81C1/00531 ,  B81C2201/0149 ,  B82Y40/00 ,  C07C35/48 ,  C07C43/215 ,  C07C43/225 ,  C07C217/84 ,  C07C2601/16 ,  C07D209/48 ,  C07F7/1804 ,  C08F12/20 ,  C08F12/22 ,  C08F12/26 ,  C08F12/32 ,  C08F212/14 ,  C08F220/10 ,  C08F220/30 ,  C08F2438/03 ,  C08J5/18 ,  C08J7/123 ,  C08J7/14 ,  C08J2353/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/039 ,  G03F7/162

摘要： The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.