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1.
公开(公告)号:US20160035644A1
公开(公告)日:2016-02-04
申请号:US14630239
申请日:2015-02-24
IPC分类号: H01L23/367 , H01L23/48 , H01L25/065 , H01L23/31 , H01L23/00
CPC分类号: H01L23/3675 , H01L21/268 , H01L21/2855 , H01L21/2885 , H01L21/3105 , H01L21/486 , H01L21/56 , H01L21/76802 , H01L21/76879 , H01L23/3107 , H01L23/36 , H01L23/3736 , H01L23/4334 , H01L23/481 , H01L23/49827 , H01L23/49861 , H01L23/5384 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/32 , H01L24/82 , H01L24/83 , H01L2224/04105 , H01L2224/16245 , H01L2224/19 , H01L2224/29111 , H01L2224/2912 , H01L2224/2919 , H01L2224/32245 , H01L2224/73253 , H01L2224/73267 , H01L2224/83005 , H01L2224/83801 , H01L2224/8385 , H01L2924/01029 , H01L2924/10253 , H01L2924/14
摘要: An integrated circuit package may include a semiconductor die, a heat spreader, and encapsulation material. The semiconductor die may contain an electronic circuit and exposed electrical connections to the electronic circuit. The heat spreader may be thermally-conductive and may have a first outer surface and a second outer surface substantially parallel to the first outer surface. The first outer surface may be affixed to all portions of a silicon side of the semiconductor die in a thermally-conductive manner. The encapsulation material may be non-electrically conductive and may completely encapsulate the semiconductor die and the heat spreader, except for the second surface of the heat spreader. The second surface of the heat spreader may be solderable and may form part of an exterior surface of the integrated circuit package.
摘要翻译: 集成电路封装可以包括半导体管芯,散热器和封装材料。 半导体管芯可以包含电子电路和暴露的电连接到电子电路。 散热器可以是导热的并且可以具有基本上平行于第一外表面的第一外表面和第二外表面。 第一外表面可以以导热方式固定到半导体管芯的硅侧的所有部分。 除了散热器的第二表面之外,封装材料可以是不导电的,并且可以完全封装半导体管芯和散热器。 散热器的第二表面可以是可焊接的并且可以形成集成电路封装的外表面的一部分。
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2.
公开(公告)号:US20160035645A1
公开(公告)日:2016-02-04
申请号:US14630302
申请日:2015-02-24
IPC分类号: H01L23/367 , H01L23/48 , H01L23/00 , H01L25/065 , H01L23/31 , H01L23/495
CPC分类号: H01L24/73 , H01L21/486 , H01L21/568 , H01L23/4334 , H01L23/49827 , H01L23/49861 , H01L23/5384 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/82 , H01L25/0657 , H01L2224/04105 , H01L2224/05548 , H01L2224/16245 , H01L2224/16265 , H01L2224/29111 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2224/73253 , H01L2224/73267 , H01L2224/82005 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/19104 , H01L2924/00014 , H01L2924/01051 , H01L2924/014
摘要: A flipchip package may include a semiconductor die, a heat spreader, and encapsulation material. The semiconductor die may contain an electronic circuit and exposed electrical connections to the electronic circuit. The heat spreader may be thermally-conductive and may have a first outer surface and a second outer surface substantially parallel to the first outer surface. The first outer surface may be affixed to all portions of a silicon side of the semiconductor die in a thermally-conductive manner. The encapsulation material may be non-electrically conductive and may completely encapsulate the semiconductor die and the heat spreader, except for the second surface of the heat spreader. The second surface of the heat spreader may be solderable and may form part of an exterior surface of the flipchip package.
摘要翻译: 倒装芯片封装可以包括半导体管芯,散热器和封装材料。 半导体管芯可以包含电子电路和暴露的电连接到电子电路。 散热器可以是导热的并且可以具有基本上平行于第一外表面的第一外表面和第二外表面。 第一外表面可以以导热方式固定到半导体管芯的硅侧的所有部分。 除了散热器的第二表面之外,封装材料可以是不导电的,并且可以完全封装半导体管芯和散热器。 散热器的第二表面可以是可焊接的并且可以形成倒装芯片封装的外表面的一部分。
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公开(公告)号:US09966832B1
公开(公告)日:2018-05-08
申请号:US15590305
申请日:2017-05-09
IPC分类号: H02M1/15 , H02M1/14 , H02M3/156 , H03K5/134 , H03K5/135 , H03K5/14 , H03K17/16 , H02M1/00 , H02M1/38
CPC分类号: H02M1/143 , H02M3/156 , H02M2001/0025 , H02M2003/1566 , H03K5/134 , H03K5/135 , H03K5/14
摘要: A predicted ripple in the feedback voltage of a switching converter is generated, based on the ripple over a certain number of recent switching cycles. The DC portion of the feedback voltage is filtered out. This predicted feedback voltage ripple is then added to a fixed reference voltage to create a compensated reference voltage. The compensated reference voltage is applied to the non-inverting input of an error amplifier, and the feedback voltage (having a DC component and ripple) is applied to the inverting input of the error amplifier. Thus, substantially the same ripple component is applied to both inputs and cancels out. Therefore, the output of the error amplifier is not affected by the ripple in the feedback voltage, and a non-rippling control voltage is generated by the error amplifier. As a result, the gain-bandwidth product of the converter can be increased for faster response to transients.
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4.
公开(公告)号:US09431319B2
公开(公告)日:2016-08-30
申请号:US14630239
申请日:2015-02-24
IPC分类号: H01L23/10 , H01L23/367 , H01L23/31 , H01L23/48 , H01L23/433 , H01L23/498 , H01L21/48 , H01L23/538 , H01L23/00
CPC分类号: H01L23/3675 , H01L21/268 , H01L21/2855 , H01L21/2885 , H01L21/3105 , H01L21/486 , H01L21/56 , H01L21/76802 , H01L21/76879 , H01L23/3107 , H01L23/36 , H01L23/3736 , H01L23/4334 , H01L23/481 , H01L23/49827 , H01L23/49861 , H01L23/5384 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/32 , H01L24/82 , H01L24/83 , H01L2224/04105 , H01L2224/16245 , H01L2224/19 , H01L2224/29111 , H01L2224/2912 , H01L2224/2919 , H01L2224/32245 , H01L2224/73253 , H01L2224/73267 , H01L2224/83005 , H01L2224/83801 , H01L2224/8385 , H01L2924/01029 , H01L2924/10253 , H01L2924/14
摘要: An integrated circuit package may include a semiconductor die, a heat spreader, and encapsulation material. The semiconductor die may contain an electronic circuit and exposed electrical connections to the electronic circuit. The heat spreader may be thermally-conductive and may have a first outer surface and a second outer surface substantially parallel to the first outer surface. The first outer surface may be affixed to all portions of a silicon side of the semiconductor die in a thermally-conductive manner. The encapsulation material may be non-electrically conductive and may completely encapsulate the semiconductor die and the heat spreader, except for the second surface of the heat spreader. The second surface of the heat spreader may be solderable and may form part of an exterior surface of the integrated circuit package.
摘要翻译: 集成电路封装可以包括半导体管芯,散热器和封装材料。 半导体管芯可以包含电子电路和暴露的电连接到电子电路。 散热器可以是导热的并且可以具有基本上平行于第一外表面的第一外表面和第二外表面。 第一外表面可以以导热方式固定到半导体管芯的硅侧的所有部分。 除了散热器的第二表面之外,封装材料可以是不导电的,并且可以完全封装半导体管芯和散热器。 散热器的第二表面可以是可焊接的并且可以形成集成电路封装的外表面的一部分。
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公开(公告)号:US08823345B2
公开(公告)日:2014-09-02
申请号:US13710127
申请日:2012-12-10
发明人: Leonard Shtargot , Daniel Cheng , John Gardner , Jeffrey Witt , Christian Kueck
CPC分类号: G05F1/10 , H01L27/0207 , H02M1/44 , H02M3/1588 , H03K17/161 , Y02B70/1466
摘要: This invention uses new switching regulator structures to split single magnetic loops into multiple magnetic loops, with linked opposing magnetic fields, to cause a cancelling effect, resulting in a much lower overall magnetic field. This results in lower EMI. In one embodiment, synchronously switched transistors are divided up into parallel topside transistors and parallel bottomside transistors. The topside transistors are positioned to oppose the bottomside transistors, and bypass capacitors are connected between the pairs to create a plurality of current loops. The components are arranged to form a mirror image of the various current loops so that the resulting magnetic fields are in opposite directions and substantially cancel each other out. Creating opposite current loops may also be achieved by forming the conductors and components in a figure 8 pattern with a cross-over point.
摘要翻译: 本发明使用新的开关调节器结构将单个磁环分离成具有相连的相对磁场的多个磁环,以产生抵消效应,导致总磁场低得多。 这导致EMI降低。 在一个实施例中,同步开关晶体管被分成平行的顶侧晶体管和平行的底部旁路晶体管。 顶侧晶体管被定位成与底部晶体管相对,并且旁路电容器连接在对之间以产生多个电流环路。 这些部件被布置成形成各种电流回路的镜像,使得所得到的磁场处于相反方向并且基本相互抵消。 也可以通过在具有交叉点的图8图案中形成导体和部件来实现形成相反的电流环。
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公开(公告)号:US20140111174A1
公开(公告)日:2014-04-24
申请号:US13710127
申请日:2012-12-10
发明人: Leonard Shtargot , Daniel Cheng , John Gardner , Jeffrey Witt , Christian Kueck
IPC分类号: G05F1/10
CPC分类号: G05F1/10 , H01L27/0207 , H02M1/44 , H02M3/1588 , H03K17/161 , Y02B70/1466
摘要: This invention uses new switching regulator structures to split single magnetic loops into multiple magnetic loops, with linked opposing magnetic fields, to cause a cancelling effect, resulting in a much lower overall magnetic field. This results in lower EMI. In one embodiment, synchronously switched transistors are divided up into parallel topside transistors and parallel bottomside transistors. The topside transistors are positioned to oppose the bottomside transistors, and bypass capacitors are connected between the pairs to create a plurality of current loops. The components are arranged to form a mirror image of the various current loops so that the resulting magnetic fields are in opposite directions and substantially cancel each other out. Creating opposite current loops may also be achieved by forming the conductors and components in a FIG. 8 pattern with a cross-over point.
摘要翻译: 本发明使用新的开关调节器结构将单个磁环分离成具有相连的相对磁场的多个磁环,以产生抵消效应,导致总磁场低得多。 这导致EMI降低。 在一个实施例中,同步开关晶体管被分成平行的顶侧晶体管和平行的底部旁路晶体管。 顶侧晶体管被定位成与底部晶体管相对,并且旁路电容器连接在对之间以产生多个电流环路。 这些部件被布置成形成各种电流回路的镜像,使得所得到的磁场处于相反方向并且基本相互抵消。 也可以通过在图1中形成导体和部件来实现形成相反的电流回路。 8模式与交叉点。
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