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12 条记录 (耗时 0.017 秒)

    Methods for processing substrates using small plasma chambers
    6.
    发明授权
    Methods for processing substrates using small plasma chambers 有权

    公开(公告)号：US10332727B2

    公开(公告)日：2019-06-25

    申请号：US15877092

    申请日：2018-01-22

    申请人： Lam Research Corporation

    发明人： Richard Gottscho ,  Rajinder Dhindsa ,  Mukund Srinivasan

    IPC分类号： H01L21/687 ,  H01J37/32 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/513 ,  H01L21/67

    摘要： A plasma processing method is provided. The method includes receiving a substrate in a substrate support that is configured to be movable along a linear path. The method includes providing at least one process gas into a plasma microchamber. The plasma microchamber is disposed in a processing head having a length that is at least longer than a diameter of the substrate, and said length is perpendicular to said linear path. The method includes generating a plasma in the plasma microchamber by applying power to the plasma microchamber and applying a bias power to the substrate support. The plasma microchamber has an open side process area that is oriented and directed over a surface to be processed, and the open side process area is less than an area of the surface to be processed. The method includes translating said substrate support along said linear path while said microchamber generates the plasma in the plasma microchamber for exposing said plasma over the substrate. The translating of said substrate support along the linear path while generating said plasma via said microchamber provides for exposing said plasma across the substrate. The plasma is used for either depositing or etching a material.

    Semiconductor Processing System Having Multiple Decoupled Plasma Sources
    7.
    发明申请
    Semiconductor Processing System Having Multiple Decoupled Plasma Sources 审中-公开

    公开(公告)号：US20180240686A1

    公开(公告)日：2018-08-23

    申请号：US15954511

    申请日：2018-04-16

    申请人： Lam Research Corporation

    发明人： John Patrick Holland ,  Peter L.G. Ventzek ,  Harmeet Singh ,  Richard Gottscho

    IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/3065

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32899 ,  H01L21/3065

    摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

    Semiconductor processing system having multiple decoupled plasma sources
    8.
    发明授权
    Semiconductor processing system having multiple decoupled plasma sources 有权

    公开(公告)号：US09947557B2

    公开(公告)日：2018-04-17

    申请号：US14525716

    申请日：2014-10-28

    申请人： Lam Research Corporation

    发明人： John Patrick Holland ,  Peter L. G. Ventzek ,  Harmeet Singh ,  Richard Gottscho

    IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32

    CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32633 ,  H01J37/32899 ,  H01L21/3065

    摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

    Systems, Methods and Apparatus for Choked Flow Element Extraction
    9.
    发明申请
    Systems, Methods and Apparatus for Choked Flow Element Extraction 有权
    阻塞流动元件提取的系统，方法和装置

    公开(公告)号：US20160358754A1

    公开(公告)日：2016-12-08

    申请号：US15243815

    申请日：2016-08-22

    申请人： Lam Research Corporation

    发明人： Ali Shajii ,  Richard Gottscho ,  Souheil Benzerrouk ,  Andrew Cowe ,  Siddharth P. Nagarkatti ,  William R. Entley

    IPC分类号： H01J37/32

    摘要： A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.

    摘要翻译： 等离子体源包括环等离子体室，围绕环等离子体室的外部的初级绕组，多个铁氧体，其中环等离子体室穿过将等离子体室耦合到处理室的每个铁氧体和多个等离子体室出口。 每个等离子体室出口具有相应的等离子体限制。 还描述了用于产生等离子体的系统和方法。

    COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THROUGH A WETTED SURFACE WITHOUT A PRIOR DRYING STEP
    10.
    发明申请
    COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THROUGH A WETTED SURFACE WITHOUT A PRIOR DRYING STEP 审中-公开
    在没有先前干燥步骤的情况下通过透湿表面使用旋转电介质的高比例特征的覆盖

    公开(公告)号：US20160042945A1

    公开(公告)日：2016-02-11

    申请号：US14456235

    申请日：2014-08-11

    申请人： Lam Research Corporation

    发明人： Ratchana Limary ,  Nerissa Draeger ,  Diane Hymes ,  Richard Gottscho

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02301 ,  H01L21/02057 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/76837

    摘要： A method includes depositing a film solution onto a patterned feature of a semiconductor substrate after wet cleaning the semiconductor substrate and without performing a drying step after the wet cleaning. The film solution includes a dielectric film precursor or a dielectric film precursor and at least one of a reactant, a solvent, a surfactant and a carrier fluid. The method includes baking at least one of solvent and unreacted solution out of a film formed by the film solution by heating the substrate to a baking temperature. The method includes curing the substrate.

    摘要翻译： 一种方法包括在湿法清洁半导体衬底之后将膜溶液沉积到半导体衬底的图案化特征上，并且在湿清洗之后不进行干燥步骤。 膜溶液包括电介质膜前体或电介质膜前体和反应物，溶剂，表面活性剂和载体流体中的至少一种。 该方法包括通过将基板加热至烘烤温度，将由溶液形成的膜中的溶剂和未反应溶液中的至少一种进行烘烤。 该方法包括固化基底。