公开(公告)号：US06870263B1

公开(公告)日：2005-03-22

申请号：US09052688

申请日：1998-03-31

申请人： Lawrence A. Clevenger ,  Ronald G. Filippi ,  Mark Hoinkis ,  Jeffery L. Hurd ,  Roy C. Iggulden ,  Herbert Palm ,  Hans W. Poetzlberger ,  Kenneth P. Rodbell ,  Florian Schnabel ,  Stefan Weber ,  Ebrahim A. Mehter

发明人： Lawrence A. Clevenger ,  Ronald G. Filippi ,  Mark Hoinkis ,  Jeffery L. Hurd ,  Roy C. Iggulden ,  Herbert Palm ,  Hans W. Poetzlberger ,  Kenneth P. Rodbell ,  Florian Schnabel ,  Stefan Weber ,  Ebrahim A. Mehter

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76807 ,  H01L21/76849 ,  H01L21/76876 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A conductor for interconnecting integrated circuit components having improved reliability. The conductor includes a liner surrounding at least three surfaces of the conductor, producing a low textured conductor. It has been found that low textured conductor results in improved electromigration lifetime.

摘要翻译： 用于互连具有改进的可靠性的集成电路部件的导体。 导体包括围绕导体的至少三个表面的衬垫，产生低纹理导体。 已经发现，低纹理导体导致改善的电迁移寿命。

公开(公告)号：US4594229A

公开(公告)日：1986-06-10

申请号：US238234

申请日：1981-02-25

申请人： Theodore F. Ciszek ,  Jeffery L. Hurd

发明人： Theodore F. Ciszek ,  Jeffery L. Hurd

IPC分类号： C30B15/00 ,  C30B15/06 ,  C30B15/24 ,  C30B15/34

CPC分类号： C30B15/24 ,  C30B15/00 ,  C30B15/06 ,  C30B29/60

摘要： An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.

摘要翻译： 提出了一种经济的方法，用于通过从液相固化来形成适用于光伏转换电池的晶体硅薄片。 两个空间分离的，通常由液态硅润湿并在端部由桥接部件连接在一起的空间分离的细丝被浸入硅熔体中，然后从熔体中缓慢地取出，使得在晶体的边缘和长丝之间生长硅晶体 。

公开(公告)号：US06361627B1

公开(公告)日：2002-03-26

申请号：US09569483

申请日：2000-05-11

申请人： Patrick W. DeHaven ,  Charles C. Goldsmith ,  Jeffery L. Hurd ,  Suryanarayana Kaja ,  Michele S. Legere ,  Eric D. Perfecto

发明人： Patrick W. DeHaven ,  Charles C. Goldsmith ,  Jeffery L. Hurd ,  Suryanarayana Kaja ,  Michele S. Legere ,  Eric D. Perfecto

IPC分类号： C12D604

CPC分类号： C25D5/50 ,  H05K1/09 ,  H05K3/22 ,  H05K2203/0723 ,  H05K2203/1105 ,  Y10T428/12431 ,  Y10T428/12882 ,  Y10T428/12903

摘要： A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100°C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

摘要翻译： 控制沉积在基底上的薄金属薄膜（例如铜或金）的微结构中的晶粒生长的方法。 在一个实施方案中，将金属膜沉积到基底上以形成具有细晶粒微结构的膜。 该膜在70-100℃的温度范围内加热。 至少5分钟，其中细晶粒微结构转化为稳定的大粒度微结构。 在另一个实施方案中，在沉积步骤之后，在不大于-20℃的温度下储存镀膜，其中在整个储存期间细晶粒微结构稳定而没有晶粒生长。

公开(公告)号：US06638374B2

公开(公告)日：2003-10-28

申请号：US10050285

申请日：2002-01-16

申请人： Patrick W. DeHaven ,  Charles C. Goldsmith ,  Jeffery L. Hurd ,  Suryanarayana Kaja ,  Michele S. Legere ,  Eric D. Perfecto

发明人： Patrick W. DeHaven ,  Charles C. Goldsmith ,  Jeffery L. Hurd ,  Suryanarayana Kaja ,  Michele S. Legere ,  Eric D. Perfecto

IPC分类号： B32B1502

CPC分类号： C25D5/50 ,  H05K1/09 ,  H05K3/22 ,  H05K2203/0723 ,  H05K2203/1105 ,  Y10T428/12431 ,  Y10T428/12882 ,  Y10T428/12903

摘要： A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

公开(公告)号：US06333531B1

公开(公告)日：2001-12-25

申请号：US09239655

申请日：1999-01-29

申请人： Yun-Yu Wang ,  Johnathan E. Faltermeier ,  Philip L. Flaitz ,  Jeffery L. Hurd ,  Rajarao Jammy ,  Radhika Srinivasan ,  Francis G. Trudeau ,  Dinah S. Weiss

发明人： Yun-Yu Wang ,  Johnathan E. Faltermeier ,  Philip L. Flaitz ,  Jeffery L. Hurd ,  Rajarao Jammy ,  Radhika Srinivasan ,  Francis G. Trudeau ,  Dinah S. Weiss

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.

摘要翻译： 在邻近异种材料的界面附近的半导体器件内的材料中形成小晶粒结构的工艺，导致高扩散晶粒结构。 在一种材料内部形成的高度扩散的晶粒结构增强了掺杂杂质的扩散，并提供了在相邻不同材料中的改进的掺杂剂控制。