Segmented LED with embedded transistors

    公开(公告)号:US11749790B2

    公开(公告)日:2023-09-05

    申请号:US16225934

    申请日:2018-12-19

    Applicant: Lumileds LLC

    CPC classification number: H01L33/62 H01L27/156 H01L33/44 H01L2933/0066

    Abstract: A device may include a substrate having a first embedded transistor in a first region and a second embedded transistor in a second region. The first region and the second region may be separated by trench extending through at least a portion of an epitaxial layer formed on the substrate. The first embedded transistor may be connected to a first light emitting diode (LED) and the second embedded transistor may be connected to a second LED. A first optical isolation layer may be between the epitaxial layer and the first region of the substrate. A second optical isolation layer may be between the epitaxial layer and the second region of the substrate.

    Monolithic, segmented light emitting diode array

    公开(公告)号:US10957820B2

    公开(公告)日:2021-03-23

    申请号:US16226609

    申请日:2018-12-19

    Applicant: Lumileds LLC

    Abstract: A light-emitting device is disclosed which includes a segmented active layer disposed between a segmented conductivity layer and a continuous conductivity layer, the active layer, the segmented conductivity layer, and the continuous conductivity layer being arranged to define a plurality of pixels, each pixel including a different segment of the segmented conductivity layer and the segmented active layer. A continuous wavelength converting layer disposed on the continuous conductivity layer is provided. A plurality of first contacts, each first contact being electrically connected to a different segment of the segmented conductivity layer is provided. One or more second contacts that are electrically connected to the continuous conductivity layer are also provided, the number of second contacts being less than the number of first contacts.

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