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34 条记录 (耗时 0.037 秒)

    Colored mask combined with selective area deposition
    2.
    发明申请
    Colored mask combined with selective area deposition 有权
    彩色面罩与选择性区域沉积相结合

    公开(公告)号：US20090130609A1

    公开(公告)日：2009-05-21

    申请号：US11986169

    申请日：2007-11-20

    申请人： Lyn M. Irving ,  Diane C. Freeman ,  Peter J. Cowdery-Corvan ,  Cheng Yang ,  David H. Levy

    发明人： Lyn M. Irving ,  Diane C. Freeman ,  Peter J. Cowdery-Corvan ,  Cheng Yang ,  David H. Levy

    IPC分类号： G03F1/00

    CPC分类号： H01L27/1288 ,  G03F7/0005 ,  G03F7/2022 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/7869

    摘要： The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

    摘要翻译： 本发明涉及一种用于形成结构的方法，包括（a）提供透明支撑体; （b）在所述透明支撑体的第一面上形成彩色掩模; （c）施加包含对可见光敏感的沉积抑制剂材料的第一层; （d）通过用可见光将所述第一层暴露于所述彩色掩模以形成第一图案并使所述沉积抑制剂材料显影以提供所述第一层的选定区域，而不具有所述沉积抑制剂材料; 和（e）在所述透明支撑体上沉积第二层功能材料; 其中第二层功能材料仅在不具有沉积抑制剂材料的透明支撑体上基本上沉积在选定的区域中。

    Colored mask combined with selective area deposition
    3.
    发明授权
    Colored mask combined with selective area deposition 有权
    彩色面罩与选择性区域沉积相结合

    公开(公告)号：US08129098B2

    公开(公告)日：2012-03-06

    申请号：US11986169

    申请日：2007-11-20

    申请人： Lyn M. Irving ,  Diane C. Freeman ,  Peter J. Cowdery-Corvan ,  Cheng Yang ,  David H. Levy

    发明人： Lyn M. Irving ,  Diane C. Freeman ,  Peter J. Cowdery-Corvan ,  Cheng Yang ,  David H. Levy

    IPC分类号： G03F7/20

    CPC分类号： H01L27/1288 ,  G03F7/0005 ,  G03F7/2022 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/7869

    摘要： The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

    摘要翻译： 本发明涉及一种用于形成结构的方法，包括（a）提供透明支撑体; （b）在所述透明支撑体的第一面上形成彩色掩模; （c）施加包含对可见光敏感的沉积抑制剂材料的第一层; （d）通过用可见光将所述第一层暴露于所述彩色掩模以形成第一图案并使所述沉积抑制剂材料显影以提供所述第一层的选定区域，而不具有所述沉积抑制剂材料; 和（e）在所述透明支撑体上沉积第二层功能材料; 其中第二层功能材料仅在不具有沉积抑制剂材料的透明支撑体上基本上沉积在选定的区域中。

    ORGANOSILOXANE MATERIALS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS
    7.
    发明申请
    ORGANOSILOXANE MATERIALS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS 有权
    无机材料选择区沉积物的有机硅氧烷材料

    公开(公告)号：US20090081374A1

    公开(公告)日：2009-03-26

    申请号：US11861705

    申请日：2007-09-26

    申请人： Cheng Yang ,  Lyn M. Irving ,  David H. Levy ,  Peter J. Cowdery-Corvan ,  Diane C. Freeman

    发明人： Cheng Yang ,  Lyn M. Irving ,  David H. Levy ,  Peter J. Cowdery-Corvan ,  Diane C. Freeman

    IPC分类号： C08F2/46

    CPC分类号： C23C16/042 ,  C23C16/45551 ,  C23C16/545

    摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

    摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机硅氧烷化合物; 以及在步骤（b）之后图案化沉积抑制剂材料或同时施加沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。

    Organosiloxane materials for selective area deposition of inorganic materials
    8.
    发明授权
    Organosiloxane materials for selective area deposition of inorganic materials 有权
    有机硅氧烷材料用于无机材料的选择性区域沉积

    公开(公告)号：US08017183B2

    公开(公告)日：2011-09-13

    申请号：US11861705

    申请日：2007-09-26

    申请人： Cheng Yang ,  Lyn M. Irving ,  David H. Levy ,  Peter J. Cowdery-Corvan ,  Diane C. Freeman

    发明人： Cheng Yang ,  Lyn M. Irving ,  David H. Levy ,  Peter J. Cowdery-Corvan ,  Diane C. Freeman

    IPC分类号： C23C16/00

    CPC分类号： C23C16/042 ,  C23C16/45551 ,  C23C16/545

    摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

    摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机硅氧烷化合物; 以及在施加沉积抑制剂材料之后或同时施加沉积抑制剂材料以图案化沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。