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公开(公告)号：US20090081842A1
公开(公告)日：2009-03-26
申请号：US11861491
申请日：2007-09-26
申请人： Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
发明人： Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
IPC分类号： H01L21/336
CPC分类号： H01L27/1259 , B33Y80/00 , C23C16/407 , C23C16/45551 , C23C16/45595 , C23C16/545 , H01L27/1214 , H01L27/1225
摘要： The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
摘要翻译： 本发明涉及薄膜电子元件和薄膜晶体管，环境屏障层，电容器，绝缘子和总线线路的制造方法，其中大部分或全部层通过大气原子层沉积工艺制成。
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公开(公告)号：US07851380B2
公开(公告)日：2010-12-14
申请号：US11861491
申请日：2007-09-26
申请人： Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
发明人： Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
IPC分类号： H01L21/31
CPC分类号： H01L27/1259 , B33Y80/00 , C23C16/407 , C23C16/45551 , C23C16/45595 , C23C16/545 , H01L27/1214 , H01L27/1225
摘要： The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
摘要翻译： 本发明涉及薄膜电子元件和薄膜晶体管，环境屏障层，电容器，绝缘子和总线线路的制造方法，其中大部分或全部层通过大气原子层沉积工艺制成。
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公开(公告)号：US08129098B2
公开(公告)日：2012-03-06
申请号：US11986169
申请日：2007-11-20
IPC分类号： G03F7/20
CPC分类号： H01L27/1288 , G03F7/0005 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/1292 , H01L29/66765 , H01L29/7869
摘要： The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.
摘要翻译： 本发明涉及一种用于形成结构的方法，包括（a）提供透明支撑体; （b）在所述透明支撑体的第一面上形成彩色掩模; （c）施加包含对可见光敏感的沉积抑制剂材料的第一层; （d）通过用可见光将所述第一层暴露于所述彩色掩模以形成第一图案并使所述沉积抑制剂材料显影以提供所述第一层的选定区域，而不具有所述沉积抑制剂材料; 和（e）在所述透明支撑体上沉积第二层功能材料; 其中第二层功能材料仅在不具有沉积抑制剂材料的透明支撑体上基本上沉积在选定的区域中。
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公开(公告)号：US08030212B2
公开(公告)日：2011-10-04
申请号：US11861658
申请日：2007-09-26
IPC分类号： H01L21/44
CPC分类号： C23C16/45551 , C23C16/042 , H01L21/02175 , H01L21/02178 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/31616 , H01L51/0004
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机化合物或聚合物; 以及在步骤（b）之后图案化沉积抑制剂材料或同时施加沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 无机薄膜材料仅基本上沉积在不具有沉积抑制剂材料的基板的选定区域中。
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公开(公告)号：US20090130608A1
公开(公告)日：2009-05-21
申请号：US11942780
申请日：2007-11-20
IPC分类号： G03F7/26
CPC分类号： G03F7/0757 , G03F7/0754 , G03F7/40
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，将光可图案化沉积抑制剂材料施加到衬底上，其中所述沉积抑制剂材料包括有机硅氧烷化合物; 并图案化沉积抑制剂材料。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。
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公开(公告)号：US20090081827A1
公开(公告)日：2009-03-26
申请号：US11861658
申请日：2007-09-26
CPC分类号： C23C16/45551 , C23C16/042 , H01L21/02175 , H01L21/02178 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/31616 , H01L51/0004
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机化合物或聚合物; 以及在步骤（b）之后图案化沉积抑制剂材料或同时施加沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 无机薄膜材料仅基本上沉积在不具有沉积抑制剂材料的基板的选定区域中。
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7.发明申请公开(公告)号：US20090081374A1
公开(公告)日：2009-03-26
申请号：US11861705
申请日：2007-09-26
IPC分类号： C08F2/46
CPC分类号： C23C16/042 , C23C16/45551 , C23C16/545
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机硅氧烷化合物; 以及在步骤（b）之后图案化沉积抑制剂材料或同时施加沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。
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公开(公告)号：US07846644B2
公开(公告)日：2010-12-07
申请号：US11942780
申请日：2007-11-20
CPC分类号： G03F7/0757 , G03F7/0754 , G03F7/40
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，将光可图案化沉积抑制剂材料施加到衬底上，其中所述沉积抑制剂材料包括有机硅氧烷化合物; 并图案化沉积抑制剂材料。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。
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公开(公告)号：US20090130609A1
公开(公告)日：2009-05-21
申请号：US11986169
申请日：2007-11-20
IPC分类号： G03F1/00
CPC分类号： H01L27/1288 , G03F7/0005 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/1292 , H01L29/66765 , H01L29/7869
摘要： The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.
摘要翻译： 本发明涉及一种用于形成结构的方法，包括（a）提供透明支撑体; （b）在所述透明支撑体的第一面上形成彩色掩模; （c）施加包含对可见光敏感的沉积抑制剂材料的第一层; （d）通过用可见光将所述第一层暴露于所述彩色掩模以形成第一图案并使所述沉积抑制剂材料显影以提供所述第一层的选定区域，而不具有所述沉积抑制剂材料; 和（e）在所述透明支撑体上沉积第二层功能材料; 其中第二层功能材料仅在不具有沉积抑制剂材料的透明支撑体上基本上沉积在选定的区域中。
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10.发明授权Organosiloxane materials for selective area deposition of inorganic materials 有权有机硅氧烷材料用于无机材料的选择性区域沉积公开(公告)号：US08017183B2
公开(公告)日：2011-09-13
申请号：US11861705
申请日：2007-09-26
IPC分类号： C23C16/00
CPC分类号： C23C16/042 , C23C16/45551 , C23C16/545
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译： 一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机硅氧烷化合物; 以及在施加沉积抑制剂材料之后或同时施加沉积抑制剂材料以图案化沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。
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