公开(公告)号：US07144805B2

公开(公告)日：2006-12-05

申请号：US10882664

申请日：2004-07-01

申请人： LinLin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

发明人： LinLin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US06814855B2

公开(公告)日：2004-11-09

申请号：US09931283

申请日：2001-08-16

申请人： Lyndon W. Graham ,  Dakin Fulton

发明人： Lyndon W. Graham ,  Dakin Fulton

IPC分类号： G01N2728

CPC分类号： G01N27/4161 ,  G01N27/48

摘要： A method and apparatus for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth. In accordance with the method, at least two electrodes are employed to execute the electroanalytical technique. Gasses that are trapped or generated at the surface of one or both of the electrodes of the pair are reduced and/or removed by directing a flow of solution toward the electrode surface. This flow of solution against the electrode surface acts to automatically flush the generated gasses (typically in the form of small bubbles) from the electrode surface and generally eliminates the need for manual purging by an operator. Elimination of these gasses reduces or eliminates variability in the open circuit potential, and concomitant noise that would otherwise occur in the electroanalytical measurements.

摘要翻译： 阐述了使用电分析技术测量电镀溶液的目标成分的方法和装置。 根据该方法，使用至少两个电极来执行电分析技术。 通过将溶液流引向电极表面而减少和/或去除在一对电极的一个或两个电极的表面处被捕获或产生的气体。 针对电极表面的这种溶液流动用于自动地从电极表面冲洗产生的气体（通常为小气泡的形式），并且通常消除了操作者手动清除的需要。 消除这些气体会降低或消除开路电位的变化性，否则会在电分析测量中产生伴随的噪音。

公开(公告)号：US06806186B2

公开(公告)日：2004-10-19

申请号：US09815931

申请日：2001-03-23

申请人： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

发明人： Linlin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

IPC分类号： H01L214763

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US20050205111A1

公开(公告)日：2005-09-22

申请号：US11020018

申请日：2004-12-20

申请人： Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz ,  Kevin Witt ,  Kyle Hanson

发明人： Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz ,  Kevin Witt ,  Kyle Hanson

IPC分类号： C25D7/12 ,  H01L21/00 ,  B08B3/02

CPC分类号： C25D17/001 ,  H01L21/67051

摘要： Methods and apparatuses for processing microfeature workpieces are disclosed herein. In one embodiment, a workpiece support carries a workpiece in a processing volume of a processing chamber. A first fluid delivery device directs an unsupported stream of a first fluid into the processing volume. A second fluid delivery device directs an unsupported stream of a second fluid into the processing volume. A first fluid collector receives at least a portion of the first fluid, and a second fluid collector receives at least a portion of the second fluid. Accordingly, embodiments of the apparatus support the use of multiple fluids in a single processing volume to control, restrict, and/or eliminate mixing between the two fluids while reducing and/or eliminating the need for purging and/or rinsing portions of the apparatus. The rotation rate and/or position of the workpiece can also be controlled to control the manner in which the fluids are collected.

摘要翻译： 本文公开了微加工件的加工方法和装置。 在一个实施例中，工件支撑件在处理室的处理容积中承载工件。 第一流体输送装置将未支撑的第一流体流引导到处理体积中。 第二流体递送装置将未支撑的第二流体流引导到处理体积中。 第一流体收集器容纳第一流体的至少一部分，并且第二流体收集器容纳至少一部分第二流体。 因此，该设备的实施例支持在单个处理体积中使用多个流体来控制，限制和/或消除两种流体之间的混合，同时减少和/或消除对设备的清洗和/或漂洗部分的需要。 也可以控制工件的旋转速度和/或位置，以控制流体被收集的方式。

公开(公告)号：US20050051436A1

公开(公告)日：2005-03-10

申请号：US10882664

申请日：2004-07-01

申请人： Linlin Chen ,  Lyndon Graham ,  Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz

发明人： Linlin Chen ,  Lyndon Graham ,  Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz

IPC分类号： C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  H01L21/288 ,  H01L21/768 ,  H05K3/00

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US20080264774A1

公开(公告)日：2008-10-30

申请号：US11740117

申请日：2007-04-25

申请人： Rajesh Baskaran ,  Dakin Fulton

发明人： Rajesh Baskaran ,  Dakin Fulton

IPC分类号： C23C14/00

CPC分类号： C23C14/025 ,  C23C14/0641 ,  C25D5/54

摘要： Metal seed layers and/or barrier layers are treated to render them more suitable for subsequent electrochemical deposition of metals thereon. The processes employ thermal techniques to reduce metal oxides that have formed on the surface of the seed layers and/or barrier layers.

摘要翻译： 处理金属种子层和/或阻挡层以使它们更适合于其上的金属的随后的电化学沉积。 该方法采用热技术来减少在种子层和/或阻挡层的表面上形成的金属氧化物。

公开(公告)号：US06592736B2

公开(公告)日：2003-07-15

申请号：US09683597

申请日：2002-01-23

申请人： Dakin Fulton ,  Thomas L. Ritzdorf

发明人： Dakin Fulton ,  Thomas L. Ritzdorf

IPC分类号： C25D500

CPC分类号： C25D21/14 ,  G05D11/133 ,  Y10T436/11

摘要： An automated chemical management system for managing the chemical content of an electrochemical bath used to deposit a material on the surface of a microelectronic workpiece is set forth. The automated chemical management system includes a dosing system that is adapted to dose an amount of one or more chemicals to replenish a given electrochemical bath constituent in accordance with a predetermined dosing equation. The chemical management system also includes an analytical measurement system that is adapted to provide a measurement result indicative of the amount of the given constituent in the electrochemical bath at predetermined time intervals. The chemical management system uses the measurement results to modify the dosing equation of the dosing system. In this manner, the replenishment operations executed by the chemical management system are effectively refined over time thereby providing more accurate control of the amount of the target constituent in the electrochemical bath.

摘要翻译： 阐述了一种用于管理用于在微电子工件的表面上沉积材料的电化学浴的化学成分的自动化学品管理系统。 自动化学品管理系统包括一个计量系统，其适于根据预定的剂量方程来量化一种或多种化学物质量以补充给定的电化学浴组分。 化学品管理系统还包括分析测量系统，其适于以预定的时间间隔提供指示电化学浴中的给定成分的量的测量结果。 化学品管理系统使用测量结果来修改计量系统的计量方程。 以这种方式，由化学品管理系统执行的补充操作随着时间的推移得到有效的改进，从而可以更准确地控制电化学浴中的目标成分的量。