公开(公告)号：US20250089414A1

公开(公告)日：2025-03-13

申请号：US18464201

申请日：2023-09-09

Applicant: Meta Platforms Technologies, LLC

Inventor： Salim Boutami ,  Yaniv Vinish ,  Stephan Lutgen

IPC: H01L33/58

Abstract: An optical element includes a planar body having a circular profile including a plurality of annuli of decreasing width with increasing radius, where the circular profile includes a sequential arrangement of: (a) a first annulus including alternating azimuthal segments of high and low refractive index materials, (b) a second annulus including the high refractive index material, (c) a third annulus including alternating azimuthal segments of the high and low refractive index materials, and (d) a fourth annulus including the low refractive index material. The optical element may be configured to increase the light extraction efficiency and directionality of light output from a light emitting diode.

公开(公告)号：US11631587B2

公开(公告)日：2023-04-18

申请号：US17738735

申请日：2022-05-06

Applicant: Meta Platforms Technologies, LLC

Inventor： Stephan Lutgen ,  Thomas Lauermann

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/32 ,  H01L33/50 ,  H01L21/20 ,  H01L33/02 ,  H01L27/15 ,  G02B27/01 ,  H01L33/60

Abstract: Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component including a semiconductor layer stack is hybrid bonded to a second component including a substrate that has a different thermal expansion coefficient than the semiconductor layer stack. The semiconductor layer stack includes an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The first component and the second component further include first contacts and second contacts, respectively. To hybrid bond the two components, the first contacts are aligned with the second contacts. Then dielectric bonding is performed to bond respective dielectric materials of both components. The dielectric bonding is followed by metal bonding of the contacts, using annealing. To compensate run-out between the first contacts and the second contacts, aspects of the present disclosure relate to changing a curvature of the first component and/or the second component during the annealing stage.

公开(公告)号：US11677042B2

公开(公告)日：2023-06-13

申请号：US16833614

申请日：2020-03-29

Applicant: Meta Platforms Technologies, LLC

Inventor： Markus Broell ,  Michael Grundmann ,  David Hwang ,  Stephan Lutgen ,  Brian Matthew Mcskimming ,  Anurag Tyagi

IPC: H01L33/32 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/0095 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/32

Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

公开(公告)号：US11569091B2

公开(公告)日：2023-01-31

申请号：US16863572

申请日：2020-04-30

Applicant: Meta Platforms Technologies, LLC

Inventor： Stephan Lutgen ,  Thomas Lauermann

IPC: H01L21/20 ,  H01L33/62 ,  H01L33/02 ,  H01L27/15 ,  H01L33/00 ,  G02B27/01 ,  H01L33/32 ,  H01L33/50 ,  H01L33/60

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component and a second component. The first component includes a semiconductor layer stack having an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The second component includes a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component. First contacts of the first component are aligned with and bonded to second contacts of the second component. The first contacts of the first component form a first pattern within the first dielectric material of the first component, and the second contacts of the second component form a second pattern within the second dielectric material of the second component.

公开(公告)号：US11430658B2

公开(公告)日：2022-08-30

申请号：US16863576

申请日：2020-04-30

Applicant: Meta Platforms Technologies, LLC

Inventor： Stephan Lutgen ,  Thomas Lauermann

IPC: H01L21/20 ,  H01L33/62 ,  H01L33/02 ,  H01L27/15 ,  H01L33/00 ,  G02B27/01 ,  H01L33/32 ,  H01L33/50 ,  H01L33/60

Abstract: Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

公开(公告)号：US12243906B2

公开(公告)日：2025-03-04

申请号：US17525442

申请日：2021-11-12

Applicant: Meta Platforms Technologies, LLC

Inventor： Stephan Lutgen ,  Markus Broell ,  Thomas Lauermann ,  Berthold Hahn ,  Christophe Antoine Hurni ,  Guillaume Lheureux

IPC: H01L27/15 ,  G02B27/01 ,  H01L33/00 ,  H01L33/20 ,  H01L33/62

Abstract: A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

公开(公告)号：US11774753B1

公开(公告)日：2023-10-03

申请号：US17531301

申请日：2021-11-19

Applicant: META PLATFORMS TECHNOLOGIES, LLC

Inventor： Giuseppe Calafiore ,  Ningfeng Huang ,  Andrew Maimone ,  Andrew Ouderkirk ,  Hee Yoon Lee ,  Maxwell Parsons ,  Scott Charles McEldowney ,  Babak Amirsolaimani ,  Pasi Saarikko ,  Wanli Chi ,  Alexander Koshelev ,  Barry David Silverstein ,  Lu Lu ,  Wai Sze Tiffany Lam ,  Gang Li ,  Stephan Lutgen ,  Francois Gerard Franck Olivier ,  David Massoubre

IPC: G02B27/00 ,  G02B27/44 ,  G02B27/01 ,  G02B27/09 ,  G02B27/10

CPC classification number: G02B27/0081 ,  G02B27/0172 ,  G02B27/0944 ,  G02B27/1086 ,  G02B27/44 ,  G02B2027/0145 ,  G02B2027/0152

Abstract: A waveguide assembly is provided. The waveguide assembly includes a pair of pupil-replicating waveguides. The first pupil-replicating waveguide is configured for receiving an input beam of image light and providing an intermediate beam comprising multiple offset portions of the input beam. The second pupil-replicating waveguide is configured for receiving the intermediate beam from the first pupil-replicating waveguide and providing an output beam comprising multiple offset portions of the intermediate beam. The input beam may be expanded by the waveguide assembly in such a manner that pupil gaps are reduced or eliminated.

公开(公告)号：US11581457B1

公开(公告)日：2023-02-14

申请号：US17242002

申请日：2021-04-27

Applicant: Meta Platforms Technologies, LLC

Inventor： Thomas Lauermann ,  Stephan Lutgen ,  David Hwang

IPC: H01L33/00 ,  H01L51/00 ,  G02B27/00 ,  H01L33/24 ,  H01L51/52 ,  G02B27/01 ,  H01L33/44

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

公开(公告)号：US12021168B1

公开(公告)日：2024-06-25

申请号：US18160911

申请日：2023-01-27

Applicant: Meta Platforms Technologies, LLC

Inventor： Thomas Lauermann ,  Stephan Lutgen ,  David Hwang

IPC: H01L33/00 ,  G02B27/01 ,  H01L33/24 ,  H01L33/44 ,  H10K50/80

CPC classification number: H01L33/24 ,  G02B27/0172 ,  H01L33/44 ,  H10K50/80

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method of forming an LED involves forming a semiconductor structure on a substrate. The semiconductor structure includes a p-side semiconductor layer, an n-side semiconductor layer, and an active light emitting layer between the p-side semiconductor layer and the n-side semiconductor layer. The semiconductor structure is also formed to include a light outcoupling surface facing the substrate. The light outcoupling surface has a diameter less than twice an electron diffusion length of a material of the semiconductor structure. The method further involves implanting ions in an outer region of the semiconductor structure, then annealing the outer region after the ions have been implanted. The annealing causes the ions to intermix with atoms within the outer region, thereby increasing a bandgap of the outer region.

公开(公告)号：US11854810B1

公开(公告)日：2023-12-26

申请号：US18183936

申请日：2023-03-14

Applicant: Meta Platforms Technologies, LLC

Inventor： Stephan Lutgen ,  Thomas Lauermann

IPC: H01L33/02 ,  H01L33/62 ,  H01L21/20 ,  H01L27/15 ,  H01L33/00 ,  G02B27/01 ,  H01L33/32 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L21/2007 ,  G02B27/0172 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/0093 ,  H01L33/025 ,  H01L33/32 ,  H01L33/502 ,  H01L33/60 ,  H01L33/62 ,  G02B2027/0116 ,  G02B2027/0178 ,  H01L2224/4852

Abstract: Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component is bonded to a second component using dielectric bonding and metal bonding. The first component includes an active light emitting layer between oppositely doped semiconductor layers. The second component includes a substrate having a different thermal expansion coefficient than the first component. First contacts of the first component are aligned to second contacts of the second component. A dielectric material of the first component is then bonded to a dielectric material of the second component. The metal bonding is performed between the first contacts and the second contacts, after the dielectric bonding, and using annealing. The bonded structure has a concave or convex shape before the metal bonding. Run-out between the first contacts and the second contacts is compensated through temperature-induced changes in a curvature of the bonded structure during the metal bonding.