公开(公告)号：US20140087563A1

公开(公告)日：2014-03-27

申请号：US14094473

申请日：2013-12-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/033 ,  H01L21/308

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除每对间隔件形成的心轴中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US09610593B2

公开(公告)日：2017-04-04

申请号：US14746673

申请日：2015-06-22

Applicant: Micron Technology, Inc.

Inventor： Krupakar M. Subramanian ,  Neal R. Rueger ,  Gurtej S. Sandhu

IPC: B05C11/00 ,  B05B1/14 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01J37/32

CPC classification number: B05B1/14 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J37/32366

Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

公开(公告)号：US09061297B2

公开(公告)日：2015-06-23

申请号：US14285896

申请日：2014-05-23

Applicant: Micron Technology, Inc.

Inventor： Krupakar M. Subramanian ,  Neal R. Rueger ,  Gurtej S. Sandhu

IPC: B05B1/14 ,  C23C16/00 ,  B05D5/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01J37/32

CPC classification number: B05B1/14 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J37/32366

Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

Abstract translation: 本发明一般涉及一种用于控制纳米颗粒的放置的系统及其使用方法。 在一个说明性实施例中，该装置包括衬底和衬底中的多个漏斗，其中每个漏斗包括入口开口和细长的矩形出口。 在一个说明性实施例中，该方法包括产生包含多个碳纳米管的多尘等离子体，将掩模放置在尘埃等离子体和碳纳米管的期望目标之间，掩模具有延伸穿过其中的多个开口，并且熄灭灰尘等离子体 从而允许灰尘等离子体中的至少一些碳纳米管穿过掩模中的多个开口中的至少一些并且落在目标上。

公开(公告)号：US20140273706A1

公开(公告)日：2014-09-18

申请号：US14250932

申请日：2014-04-11

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger

IPC: H01J9/18 ,  H01J9/02

CPC classification number: H01J9/18 ,  B82Y15/00 ,  B82Y99/00 ,  H01J9/025 ,  H01J21/04 ,  H01J21/10 ,  H01J63/02 ,  H01J2201/30469 ,  Y10S977/939

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract translation: 本公开包括场发射装置实施例。 本公开还包括用于形成场发射器件的方法实施例。 一个装置实施例包括限定内部空间的壳体，该内部空间包括下部分和上部部分，位于壳体下部的阴极，耦合到阴极的细长纳米结构，位于壳体上部的阳极，以及 位于细长纳米结构和阳极之间的控制网格，以控制阳极和细长纳米结构之间的电子流。

公开(公告)号：US08609542B2

公开(公告)日：2013-12-17

申请号：US13784468

申请日：2013-03-04

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC: H01L21/311

CPC classification number: H01L31/02325 ,  B29D11/00365 ,  H01L22/20 ,  H01L27/14627

Abstract: Methods may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract translation: 方法可以操作以将样品定位在处理室内并在样品的表面上操作。 进一步的活动可以包括在表面附近形成一层反应性材料，并且激发邻近表面的一部分反应性材料以形成化学自由基。 另外的活动可以包括将表面的被激发部分附近的材料的一部分移除到预定水平，并且继续创建，激励和移除动作，直到出现多个停止标准中的至少一个。

公开(公告)号：US20130180950A1

公开(公告)日：2013-07-18

申请号：US13784468

申请日：2013-03-04

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC: H01L31/0232

CPC classification number: H01L31/02325 ,  B29D11/00365 ,  H01L22/20 ,  H01L27/14627

Abstract: Methods may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract translation: 方法可以操作以将样品定位在处理室内并在样品的表面上操作。 进一步的活动可以包括在表面附近形成一层反应性材料，并且激发邻近表面的一部分反应性材料以形成化学自由基。 另外的活动可以包括将表面的被激发部分附近的材料的一部分移除到预定水平，并且继续创建，激励和移除动作，直到出现多个停止标准中的至少一个。

公开(公告)号：US09257294B2

公开(公告)日：2016-02-09

申请号：US14458527

申请日：2014-08-13

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger

IPC: H01L21/306 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/67069

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract translation: 公开了用于处理衬底的设备和方法。 处理装置包括用于在其中产生等离子体的腔室，与腔室相关联的电极以及耦合到电极的信号发生器。 信号发生器以足够的幅度和足够的导通时间和关断时间的占空比向电极施加DC脉冲以引起腔室内的事件。 根据DC脉冲的振幅，从室内的气体产生等离子体。 通过响应于导通时间期间的DC脉冲的幅度，将等离子体的离子加速到腔室中的衬底来产生能量离子。 一些能量离子在关闭时间期间响应于DC脉冲被中和到能量中性粒子。 一些精力充沛的中性粒子以足够的能量冲击衬底，从而在衬底上引起化学反应。

公开(公告)号：US20150283563A1

公开(公告)日：2015-10-08

申请号：US14746673

申请日：2015-06-22

Applicant: Micron Technology, Inc.

Inventor： Krupakar M. Subramanian ,  Neal R. Rueger ,  Gurtej S. Sandhu

IPC: B05B1/14

CPC classification number: B05B1/14 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J37/32366

Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

Abstract translation: 本发明一般涉及一种用于控制纳米颗粒的放置的系统及其使用方法。 在一个说明性实施例中，该装置包括衬底和衬底中的多个漏斗，其中每个漏斗包括入口开口和细长的矩形出口。 在一个说明性实施例中，该方法包括产生包含多个碳纳米管的多尘等离子体，将掩模放置在尘埃等离子体和碳纳米管的期望目标之间，掩模具有延伸穿过其中的多个开口，并且熄灭灰尘等离子体 从而允许灰尘等离子体中的至少一些碳纳米管穿过掩模中的多个开口中的至少一些并且落在目标上。

公开(公告)号：US20140349493A1

公开(公告)日：2014-11-27

申请号：US14458527

申请日：2014-08-13

Applicant: Micron Technology, Inc.

Inventor： Neal R. Rueger

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/67069

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract translation: 公开了用于处理衬底的设备和方法。 处理装置包括用于在其中产生等离子体的腔室，与腔室相关联的电极以及耦合到电极的信号发生器。 信号发生器以足够的幅度和足够的导通时间和关断时间的占空比向电极施加DC脉冲以引起腔室内的事件。 根据DC脉冲的振幅，从室内的气体产生等离子体。 通过响应于导通时间期间的DC脉冲的幅度，将等离子体的离子加速到腔室中的衬底来产生能量离子。 一些能量离子在关闭时间期间响应于DC脉冲被中和到能量中性粒子。 一些精力充沛的中性粒子以足够的能量冲击衬底，从而在衬底上引起化学反应。

公开(公告)号：US08865598B2

公开(公告)日：2014-10-21

申请号：US14094473

申请日：2013-12-02

Applicant: Micron Technology, Inc.

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/302 ,  H01L27/105 ,  H01L21/308 ,  H01L21/033

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除每对间隔件形成的心轴中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替层，无定形碳沉积在剩余的间隔物周围，随后在无定形碳上形成一对间隔物的多个循环，去除一对隔离物中的一个并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。