公开(公告)号：US20120211765A1

公开(公告)日：2012-08-23

申请号：US13457931

申请日：2012-04-27

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02381 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

摘要翻译： 提供了使用硅衬底作为基底的外延衬底。 一种外延衬底，其中在（111）单晶Si衬底上形成一组III族氮化物层，使得III族氮化物层组的（0001）晶面基本上平行于 所述基板包括：由AlN制成的第一III族氮化物层，其具有由柱状或粒状晶体或畴中至少一种构成的许多缺陷; 与第一III族氮化物层的界面成形为三维凹凸面的第二III族氮化物层; 以及外延形成在第二III族氮化物层上的第三III族氮化物层，作为梯度组成层，其中Al的存在比例在更接近第四族III族氮化物的部分中较小。

公开(公告)号：US20120161152A1

公开(公告)日：2012-06-28

申请号：US13414104

申请日：2012-03-07

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/2003 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/205 ,  H01L29/7787

摘要： Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

摘要翻译： 提供了具有少量翘曲的无裂纹外延基板，其中使用硅基板作为基底。 外延衬底包括（111）单晶Si衬底，缓冲层和晶体层。 缓冲层由第一层叠单元和第二层压单元交替层叠形成。 第一层压单元包括组成调制层和第一中间层。 组成调制层由具有不同组成的第一单位层和第二单位层形成，以便在其中存在压缩应变。 第一中间层增强了存在于组成调制层中的压缩应变。 第二层压单元是基本上无应变的第二中间层。

公开(公告)号：US20100078679A1

公开(公告)日：2010-04-01

申请号：US12543706

申请日：2009-08-19

申请人： Makoto MIYOSHI ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Mitsuhiro Tanaka

IPC分类号： H01L31/108 ,  H01L31/18

CPC分类号： H01L31/108 ,  H01L31/022408 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened junction of a Schottky electrode. A first contact layer formed of AlGaN and having conductivity, a light-receiving layer formed of AlGaN, and a second contact layer formed of AlN and having a thickness of 5 nm are epitaxially formed on a predetermined substrate in the stated order, and a second electrode is brought into Schottky junction with the second contact layer, to thereby form MIS junction. Further, after the Schottky junction, heat treatment is performed under a nitrogen gas atmosphere at 600° C. for 30 seconds.

摘要翻译： 提供一种光接收装置，其具有优于常规肖特基二极管型光接收装置的光接收灵敏度，并且还具有足够强的肖特基电极的结。 由AlGaN形成并具有导电性的第一接触层，由AlGaN形成的光接收层和由AlN形成的厚度为5nm的第二接触层按照所述顺序外延形成在预定基板上，第二接触层 电极与第二接触层进入肖特基结，从而形成MIS结。 此外，在肖特基结之后，在氮气气氛下在600℃下进行30秒的热处理。

公开(公告)号：US20130032781A1

公开(公告)日：2013-02-07

申请号：US13570665

申请日：2012-08-09

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B25/183 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

摘要翻译： 提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。 外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。 超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。 晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。 超晶格层组中含有压应变。 在超晶格层组中，超晶格层离基底越远，压应变越大。

公开(公告)号：US20110062493A1

公开(公告)日：2011-03-17

申请号：US12853685

申请日：2010-08-10

申请人： Makoto MIYOSHI ,  Yoshitaka KURAOKA ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

发明人： Makoto MIYOSHI ,  Yoshitaka KURAOKA ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462

摘要： Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.

摘要翻译： 本发明提供一种能够实现肖特基结的反向特性的高可靠性的半导体装置的半导体装置用外延基板。 一种用于半导体器件的外延衬底，其通过在基底衬底上通过层叠形成III族氮化物层，使得每个层的（0001）晶面大致平行于衬底表面而形成，其包括：沟道层，其由 具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物; 和由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物形成的阻挡层，其中第二III族氮化物是短距离有序混合晶体 满足0＆nlE;α＆nlE; 1的范围的 - 序列参数α。

公开(公告)号：US20110049571A1

公开(公告)日：2011-03-03

申请号：US12855744

申请日：2010-08-13

申请人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/78 ,  H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US20070215885A1

公开(公告)日：2007-09-20

申请号：US11685941

申请日：2007-03-14

申请人： Makoto MIYOSHI ,  Yoshitaka Kuraoka

发明人： Makoto MIYOSHI ,  Yoshitaka Kuraoka

IPC分类号： H01L33/00

CPC分类号： H01L29/267 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/872

摘要： A semiconductor device having small leakage current and high breakdown voltage during reverse blocking, small on-state resistance and large output current at forward conduction, short reverse recovery time at shutoff, and high peak surge current value is provided. An n-type layer is made of a group-III nitride, and a p-type layer is made of a group-IV semiconductor material having a smaller band gap than the group-III nitride. The energy level at the top of the valence band of the n-type layer is lower than the energy level at the top of the valence band of the p-type layer, so that a P—N junction semiconductor device satisfying the above requirements is obtained. Further, a combined structure of P—N junction and Schottky junction by additionally providing an anode electrode to be in Schottky contact with the n-type layer also achieves the effect of decreasing voltage at the rising edge of current resulting from the Schottky junction.

摘要翻译： 提供了在反向阻断时具有小的漏电流和高击穿电压的半导体器件，小导通状态电阻和正向导通时的大输出电流，关断时的反向恢复时间短以及高峰值浪涌电流值。 n型层由III族氮化物制成，p型层由具有比III族氮化物更小的带隙的IV族半导体材料制成。 n型层的价带顶部的能级低于p型层的价带顶部的能级，从而获得满足上述要求的P-N结半导体器件。 此外，通过额外提供与n型层肖特基接触的阳极电极，P-N结和肖特基结的组合结构也实现了在肖特基结的电流上升沿降低电压的效果。

公开(公告)号：US20120113596A1

公开(公告)日：2012-05-10

申请号：US13235819

申请日：2011-09-19

申请人： Makoto MIYOSHI ,  Tsutomu OHTSU ,  Akihito KEZUKA

发明人： Makoto MIYOSHI ,  Tsutomu OHTSU ,  Akihito KEZUKA

IPC分类号： H05K7/20 ,  H05K7/00 ,  B23P11/00

CPC分类号： H05K1/0203 ,  H05K3/0061 ,  H05K3/3421 ,  H05K2201/09072 ,  H05K2201/10121 ,  Y10T29/49826

摘要： An electronic apparatus includes a substrate, a device including a flange, the device being mounted at a first side of the substrate, a plate arranged at a position corresponding to the device at a second side of the substrate, the second side being opposite to the first side, and a securing member that secures the device to the substrate.

摘要翻译： 一种电子设备，包括基板，包括凸缘的装置，所述装置安装在所述基板的第一侧上，所述装置布置在所述基板的第二侧处与所述装置相对应的位置处，所述第二侧与所述基板相对; 第一侧和固定构件，其将装置固定到基板。