公开(公告)号：US20120161152A1

公开(公告)日：2012-06-28

申请号：US13414104

申请日：2012-03-07

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Sota Maehara ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/2003 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/205 ,  H01L29/7787

摘要： Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.

摘要翻译： 提供了具有少量翘曲的无裂纹外延基板，其中使用硅基板作为基底。 外延衬底包括（111）单晶Si衬底，缓冲层和晶体层。 缓冲层由第一层叠单元和第二层压单元交替层叠形成。 第一层压单元包括组成调制层和第一中间层。 组成调制层由具有不同组成的第一单位层和第二单位层形成，以便在其中存在压缩应变。 第一中间层增强了存在于组成调制层中的压缩应变。 第二层压单元是基本上无应变的第二中间层。

公开(公告)号：US08107242B2

公开(公告)日：2012-01-31

申请号：US12601839

申请日：2008-05-29

申请人： Akio Yoshimoto ,  Mitsuhiro Tanaka

发明人： Akio Yoshimoto ,  Mitsuhiro Tanaka

IPC分类号： H05K7/20 ,  H05K7/14

CPC分类号： H05K5/0034 ,  H05K3/284 ,  H05K5/006 ,  H05K5/061 ,  H05K5/065 ,  H05K7/1417 ,  H05K7/142 ,  H05K7/20418 ,  H05K2201/2018 ,  H05K2203/1316 ,  H05K2203/1581

摘要： A substrate includes a pair of surfaces opposing to each other in a direction. First electronic components are provided on one surface. Second electronic components lower than a maximum value of the height of the first electronic components in a direction are provided on the other surface. Insulating resin includes a covering part adhering and covering the second electronic components and the other surface, and side surface part extending from the periphery of the substrate to a side of the second electronic components along the direction. A lid covers the first electronic components from an opposite side of the substrate, and is fixed to the side surface part from the opposite side of the substrate.

摘要翻译： 衬底包括在一个方向上彼此相对的一对表面。 在一个表面上提供第一电子部件。 在另一个表面上设置有低于第一电子部件在一个方向上的高度的最大值的第二电子部件。 绝缘树脂包括粘附并覆盖第二电子部件和另一表面的覆盖部分，以及沿着该方向从基板的周边延伸到第二电子部件的侧面的侧表面部分。 盖子从基板的相对侧覆盖第一电子元件，并且从基板的相对侧固定到侧表面部分。

公开(公告)号：US20110049570A1

公开(公告)日：2011-03-03

申请号：US12853716

申请日：2010-08-10

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/772 ,  H01L29/201 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分大于除了近表面部分之外的部分的In组成比。

公开(公告)号：US20100078679A1

公开(公告)日：2010-04-01

申请号：US12543706

申请日：2009-08-19

申请人： Makoto MIYOSHI ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Mitsuhiro Tanaka

IPC分类号： H01L31/108 ,  H01L31/18

CPC分类号： H01L31/108 ,  H01L31/022408 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened junction of a Schottky electrode. A first contact layer formed of AlGaN and having conductivity, a light-receiving layer formed of AlGaN, and a second contact layer formed of AlN and having a thickness of 5 nm are epitaxially formed on a predetermined substrate in the stated order, and a second electrode is brought into Schottky junction with the second contact layer, to thereby form MIS junction. Further, after the Schottky junction, heat treatment is performed under a nitrogen gas atmosphere at 600° C. for 30 seconds.

摘要翻译： 提供一种光接收装置，其具有优于常规肖特基二极管型光接收装置的光接收灵敏度，并且还具有足够强的肖特基电极的结。 由AlGaN形成并具有导电性的第一接触层，由AlGaN形成的光接收层和由AlN形成的厚度为5nm的第二接触层按照所述顺序外延形成在预定基板上，第二接触层 电极与第二接触层进入肖特基结，从而形成MIS结。 此外，在肖特基结之后，在氮气气氛下在600℃下进行30秒的热处理。

公开(公告)号：US20090231524A1

公开(公告)日：2009-09-17

申请号：US12090622

申请日：2006-08-11

申请人： Mitsuhiro Tanaka

发明人： Mitsuhiro Tanaka

IPC分类号： G02F1/1339 ,  G02F1/1333

CPC分类号： G02F1/1339 ,  G02F1/133512 ,  G02F2203/02

摘要： [Means for Solving the Problems] The outer periphery of a display medium layer is sealed by a sealant made of UV curable resin provided between first and second substrates. In the first substrate, a light shielding part including a light shielding layer is provided at a part corresponding to the sealant. In the second substrate, a part corresponding to the sealant is transparent. The light shielding part includes a face on the sealant side serving as a UV ray reflection face.

摘要翻译： 解决问题的手段显影介质层的外周由设置在第一和第二基板之间的由UV固化树脂制成的密封剂密封。 在第一基板中，在与密封剂对应的部分设置有包括遮光层的遮光部。 在第二基板中，对应于密封剂的部件是透明的。 遮光部包括作为紫外线反射面的密封剂侧的面。

公开(公告)号：US20080111151A1

公开(公告)日：2008-05-15

申请号：US11791844

申请日：2005-12-01

申请人： Junichi Teraki ,  Mitsuhiro Tanaka

发明人： Junichi Teraki ,  Mitsuhiro Tanaka

IPC分类号： H01L31/111 ,  H01L21/00

CPC分类号： H01L25/072 ,  H01L23/3677 ,  H01L23/473 ,  H01L24/48 ,  H01L25/162 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/0206 ,  H05K1/021 ,  H05K1/0272 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/0061 ,  H05K7/20927 ,  H05K2201/064 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power module includes a power semiconductor, a non-power semiconductor, one resin substrate and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate. The cooling device is disposed in order to cool the power semiconductor.

摘要翻译： 功率模块包括功率半导体，非功率半导体，一个树脂基板和冷却装置。 功率半导体和非功率半导体构成用于进行电力转换的电源电路。 功率半导体和非功率半导体都安装在树脂基板上。 设置冷却装置以冷却功率半导体。

公开(公告)号：USRE40163E1

公开(公告)日：2008-03-25

申请号：US11083331

申请日：2005-03-17

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L31/12

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/18

摘要： In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线中具有FWHM的90秒以下的高结晶性AlN层构成，第一包层由n-AlGaN层构成。 发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。

公开(公告)号：US07067847B2

公开(公告)日：2006-06-27

申请号：US10017325

申请日：2001-12-14

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.

摘要翻译： 在由例如蓝宝石单晶制成的基板上形成FWHM X射线摇摆曲线值为90秒以下的Al底层。 在AlN底层上形成缓冲层，并且具有下列组成：在1-pq N（0 <= p < = 1，0 <= y <= q）。 在缓冲层上形成GaN基半导体层组。

公开(公告)号：US06844611B2

公开(公告)日：2005-01-18

申请号：US10247366

申请日：2002-09-20

申请人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01L31/0304

CPC分类号： C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： The crystal orientation of the main surface of a sapphire single crystal base material to constitute an epitaxial substrate is inclined from the orientation (c-axis) preferably for the orientation (m-axis) by a range within 0.02-0.3 degrees. Then, a surface nitride layer is formed at the main surface of the base material. Then, a III nitride underfilm is formed on the main surface of the base material via the surface nitride layer. The III nitride underfilm includes at least Al element, and the full width at half maximum at (101-2) reflection in X-ray rocking curve of the III nitride underfilm is 2000 seconds. The surface roughness Ra within 5 μm area is 3.5 Å.

摘要翻译： 用于构成外延基板的蓝宝石单晶基材的主表面的晶体取向优选从<0001>取向（c轴）向<1-100>取向（m轴）倾斜一个范围内 0.02-0.3度。 然后，在基材的主表面上形成表面氮化物层。 然后，通过表面氮化物层在基材的主表面上形成III族氮化物底膜。 III族氮化物底膜至少包括Al元素，并且III族氮化物底膜的X射线摇摆曲线中（101-2）反射处的半峰全宽为2000秒。 5um范围内的表面粗糙度Ra为3.5Å。

公开(公告)号：US06706620B2

公开(公告)日：2004-03-16

申请号：US10074589

申请日：2002-02-13

申请人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Keiichiro Asai ,  Osamu Oda

发明人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Keiichiro Asai ,  Osamu Oda

IPC分类号： H01L2128

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A lower region having a composition of Alx1Gax2Inx3N (x1+x2+x3=1, 0.5≦x1≦1.0) is formed through epitaxial growth by a CVD method, and subsequently, an upper region having a composition of Aly1Gay2Iny3N (y1+y2+y3=1, 0≦y1≦x1−0.1) is formed through epitaxial growth by a CVD method. A boundary face divides a given III nitride film into the lower region and the upper region and the lower and upper regions have an Al content difference of 10 atomic percent or more.

摘要翻译： 通过CVD方法的外延生长，形成具有Al x1Gax2Inx3N（x1 + x2 + x3 = 1，0.5 <= x1 <= 1.0）的组成的下部区域，随后，具有组成为Aly1Gay2Iny3N（y1 + y2 + y3 = 1,0 <= y1 <= x1-0.1）通过CVD法进行外延生长而形成。 边界面将给定的III族氮化物膜分成下部区域，上部区域和下部和上部区域的Al含量差异为10原子％以上。