公开(公告)号：US5989970A

公开(公告)日：1999-11-23

申请号：US774796

申请日：1996-12-30

申请人： Makoto Ohkawa ,  Makio Iida ,  Mikimasa Suzuki

发明人： Makoto Ohkawa ,  Makio Iida ,  Mikimasa Suzuki

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/70

CPC分类号： H01L28/24

摘要： Even when a contact hole is formed before thin-film resistor formation, a contact area exposed in the contact hole is prevented from damaging. A semiconductor element is formed in a silicon semiconductor substrate and an oxide film is formed on the surface of the semiconductor substrate. Then, a contact hole is formed on the oxide film and moreover, a CrSiN film serving as a thin-film resistor and a TiW film serving as a barrier metal are formed on the oxide film. The TiW film is patterned by a mask and the CrSiN film is patterned through chemical dry etching. Finally, an Al electrode is formed on the semiconductor element and the CrSiN film through the contact hole and moreover a protective film is formed thereon.

摘要翻译： 即使在形成薄膜电阻器之前形成接触孔，也可以防止在接触孔中暴露的接触区域的损伤。 半导体元件形成在硅半导体衬底中，并且在半导体衬底的表面上形成氧化物膜。 然后，在氧化膜上形成接触孔，此外，在氧化膜上形成用作薄膜电阻器的CrSiN膜和用作阻挡金属的TiW膜。 通过掩模对TiW膜进行构图，并通过化学干蚀刻对CrSiN膜进行图案化。 最后，通过接触孔在半导体元件和CrSiN膜上形成Al电极，并且在其上形成保护膜。

公开(公告)号：US5625218A

公开(公告)日：1997-04-29

申请号：US491543

申请日：1995-06-16

申请人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

发明人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

IPC分类号： H01L23/525 ,  H01L27/10 ,  H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002

摘要： A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.

摘要翻译： 一种能够降低熔融所需的能量的熔断器熔断型半导体器件和半导体器件的制造方法。 在配备有热熔薄膜电阻器的半导体装置中，通过绝缘膜2形成在基板1上的薄膜电阻由铬，硅和钨制成，并且包含硅的绝缘体的膜7和8层压在 定影表面的上表面，铝膜5设置在定影表面的两侧和阻挡膜4上。该半导体器件通过层叠步骤制造，顺序形成第一绝缘膜2，薄膜电阻3， 阻挡膜4和铝膜5，用于降低显着熔化能的蚀刻步骤，从薄膜电阻器3的熔融区域31去除阻挡膜4和铝膜5的蚀刻步骤以及氧化膜形成步骤 沉积包括硅膜7和8的绝缘体。

公开(公告)号：US5525831A

公开(公告)日：1996-06-11

申请号：US222815

申请日：1994-04-05

申请人： Makoto Ohkawa ,  Makio Iida ,  Shoji Miura ,  Osamu Ishihara ,  Tetsuaki Kamiya

发明人： Makoto Ohkawa ,  Makio Iida ,  Shoji Miura ,  Osamu Ishihara ,  Tetsuaki Kamiya

IPC分类号： H01C17/24 ,  H01L21/02 ,  H01L29/00 ,  H01L23/58 ,  H01L29/76

CPC分类号： H01L28/20 ,  H01C17/24

摘要： A thin film resistor on a semiconductor device may be laser trimmed while reducing the influence of film thickness of a passivation film formed on the thin film resistor. An underlying oxide film consisting of a BPSG film and a silicon oxide film is formed on an Si substrate. A silicon oxide film and a silicon nitride film are formed on the underlying film as a passivation film, and a silicon oxide film is formed on this assembly. The silicon oxide film contributes to controlling a variation of the laser energy absorption rate of a thin film resistor due to an uneven thickness of the silicon nitride film. Thus, it is possible to stabilize adjustment of the resistance value of the thin film resistor with a laser.

摘要翻译： 半导体器件上的薄膜电阻器可以被激光修整，同时减少在薄膜电阻器上形成的钝化膜的膜厚度的影响。 在Si衬底上形成由BPSG膜和氧化硅膜构成的底层氧化物膜。 在作为钝化膜的基底膜上形成氧化硅膜和氮化硅膜，在该组件上形成氧化硅膜。 氧化硅膜有助于控制由于氮化硅膜的不均匀厚度导致的薄膜电阻器的激光能量吸收率的变化。 因此，可以通过激光来稳定薄膜电阻器的电阻值的调整。

公开(公告)号：US06770564B1

公开(公告)日：2004-08-03

申请号：US09361980

申请日：1999-07-28

申请人： Ichiro Ito ,  Satoshi Shiraki ,  Tomio Yamamoto ,  Makoto Ohkawa ,  Atsumi Takahashi ,  Yasuaki Tsuzuki ,  Akito Fukui ,  Toshio Sakakibara ,  Takayuki Sugisaka

发明人： Ichiro Ito ,  Satoshi Shiraki ,  Tomio Yamamoto ,  Makoto Ohkawa ,  Atsumi Takahashi ,  Yasuaki Tsuzuki ,  Akito Fukui ,  Toshio Sakakibara ,  Takayuki Sugisaka

IPC分类号： H01L21302

CPC分类号： H01L28/24 ,  H01L21/32139

摘要： An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.

摘要翻译： 在覆盖薄膜电阻器的阻挡金属上形成具有第一开口的Al膜。 在Al膜和开口中形成光致抗蚀剂，并且被图案化以具有开口面积小于第一开口的开口面积并在第一开口中开口的第二开口，以暴露出阻挡金属。 然后，通过第二开口蚀刻阻挡金属。 由于阻挡金属从第一开口的开口端的内部蚀刻，因此防止了阻挡金属的切割。

公开(公告)号：US07199026B2

公开(公告)日：2007-04-03

申请号：US10952782

申请日：2004-09-30

申请人： Makoto Ohkawa

发明人： Makoto Ohkawa

IPC分类号： H01L21/00

CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78

摘要： A method for cutting a semiconductor device is provided. The device includes a first semiconductor layer, an insulation layer, and a second semiconductor layer. The method includes the steps of: forming a semiconductor part in the first semiconductor layer; irradiating a laser beam on a surface of the first semiconductor layer; and cutting the device into a semiconductor chip by using the laser beam. The laser beam is reflected at an interface so that a first reflected beam is generated, and the laser beam is reflected at another interface so that a second reflected beam is generated. The insulation film has a thickness, which is determined to weaken the first and second reflected beams each other.

摘要翻译： 提供了一种用于切割半导体器件的方法。 该器件包括第一半导体层，绝缘层和第二半导体层。 该方法包括以下步骤：在第一半导体层中形成半导体部分; 在所述第一半导体层的表面上照射激光束; 并通过使用激光束将器件切割成半导体芯片。 激光束在界面处被反射，使得产生第一反射光束，并且激光束在另一个界面处被反射，从而产生第二反射光束。 绝缘膜具有确定为使第一和第二反射光束彼此减弱的厚度。

公开(公告)号：US06809034B2

公开(公告)日：2004-10-26

申请号：US10131683

申请日：2002-04-24

申请人： Ichiro Ito ,  Satoshi Shiraki ,  Tomio Yamamoto ,  Makoto Ohkawa ,  Atsumi Takahashi ,  Yasuaki Tsuzuki ,  Akito Fukui ,  Toshio Sakakibara ,  Takayuki Sugisaka

发明人： Ichiro Ito ,  Satoshi Shiraki ,  Tomio Yamamoto ,  Makoto Ohkawa ,  Atsumi Takahashi ,  Yasuaki Tsuzuki ,  Akito Fukui ,  Toshio Sakakibara ,  Takayuki Sugisaka

IPC分类号： H01L21302

CPC分类号： H01L28/24 ,  H01L21/32139

摘要： An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and open in the first opening to expose the barrier metal therefrom. Then, the barrier metal is etched through the second opening. Because the barrier metal is etched from an inner portion more than the opening end of the first opening, under-cut of the barrier metal is prevented.

公开(公告)号：US06645045B2

公开(公告)日：2003-11-11

申请号：US10093894

申请日：2002-03-11

申请人： Makoto Ohkawa

发明人： Makoto Ohkawa

IPC分类号： B24B4900

CPC分类号： H01L21/7624 ,  G01B11/0625 ,  G01B11/0675

摘要： The disclosed method of measuring the thickness of an active layer of an SOI substrate maintains the accuracy of previous methods but can be performed quickly and during processing of the substrate. The method includes reading data from light reflected from the substrate. A range of light wavelengths for analysis is selected, which avoids the problem of nodes, at which interference between light reflected from different surfaces is weakened. The method determines a relationship between wavelength and reflection intensity and determines peak values of the relationship. The wavelengths corresponding to an arbitrary pair of the peak values, and the number of waves between the peak values, are used to calculate the thickness of the active layer. The method includes an error correction procedure that increases measurement accuracy.

公开(公告)号：US4829029A

公开(公告)日：1989-05-09

申请号：US91981

申请日：1987-09-01

申请人： Nobuaki Kawahara ,  Hiroki Hoshizaki ,  Hirofumi Suzuki ,  Kiyomi Kobayashi ,  Makoto Ohkawa ,  Mitsuru Asano

发明人： Nobuaki Kawahara ,  Hiroki Hoshizaki ,  Hirofumi Suzuki ,  Kiyomi Kobayashi ,  Makoto Ohkawa ,  Mitsuru Asano

IPC分类号： C04B35/053 ,  H05K1/03

CPC分类号： C04B35/053 ,  H05K1/0306

摘要： A low temperature sintering ceramic material, having low temperature sinterability and excellent thermal conductivity, is particularly suitable for use in making an IC substrate of a ceramic printed plate board. This low temperature sintering ceramic material has two composition types. One is a binary composition type ceramic material consisting essentially of MgO and B.sub.2 O.sub.3, and the other is a ternary composition type ceramic material composed of principal components consisting of MgO and B.sub.2 O.sub.3 and assisting components consisting of one or more selected from Li.sub.2 O, Na.sub.2 O, K.sub.2 O, a fluoride of an alkali metal and a fluoride of an alkaline earth metal. After sintering, MgO and B.sub.2 O.sub.3 are respectively contained at 50 to 90 mol% and 10 to 50 mol% on 100 mol% of the total amount of MgO and B.sub.2 O.sub.3.

摘要翻译： 具有低温烧结性和优异导热性的低温烧结陶瓷材料特别适用于制造陶瓷印刷板的IC基片。 该低温烧结陶瓷材料具有两种组成类型。 一种是基本上由MgO和B2O3组成的二元组成型陶瓷材料，另一种是由MgO和B2O3组成的主要组分和由一种或多种选自Li2O，Na2O，K2O， 碱金属的氟化物和碱土金属的氟化物。 烧结后，MgO和B2O3的含量相对于MgO和B 2 O 3的总量的100摩尔％分别为50〜90摩尔％，10〜50摩尔％。

公开(公告)号：US06656755B1

公开(公告)日：2003-12-02

申请号：US09709456

申请日：2000-11-13

申请人： Makoto Ohkawa

发明人： Makoto Ohkawa

IPC分类号： H01L2100

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  H01L21/67253 ,  H01L21/76251

摘要： When an SOI substrate composed of a support wafer and an element formation wafer that are bonded together with an insulating film interposed therebetween is polished from a surface of the element formation wafer, a thickness of the element formation wafer is measured based on a relation between an intensity and a wavelength of a light that is irradiated to the SOI substrate from a side of the support wafer and is reflected by the SOI substrate. Thus, the measurement of the thickness of the element formation wafer can be performed simultaneouly with the polishing of the SOI substrate.

摘要翻译： 当从元件形成晶片的表面抛光由支撑晶片和元件形成晶片组成的SOI绝缘衬底，其中绝缘膜与绝缘膜结合在一起时，元件形成晶片的厚度基于 强度和从支撑晶片一侧照射到SOI衬底的光的波长，并被SOI衬底反射。 因此，可以通过SOI衬底的研磨同时进行元件形成晶片厚度的测量。

公开(公告)号：US06645875B2

公开(公告)日：2003-11-11

申请号：US09824726

申请日：2001-04-04

申请人： Makoto Ohkawa ,  Takayuki Sugisaka ,  Shuichi Ito ,  Hiroshi Tanaka

发明人： Makoto Ohkawa ,  Takayuki Sugisaka ,  Shuichi Ito ,  Hiroshi Tanaka

IPC分类号： H01L21302

CPC分类号： H01L28/24 ,  H01L21/32134

摘要： When a barrier metal disposed on a thin film resistor material is wet-etched to expose the underlying thin film resistor material as a thin film resistor, the wet etching is performed at first and second steps. The first step is performed using H2O2/NH4OH solution, and is stopped before the thin film resistor material is exposed. Then, the second step is performed using H2O2/H2O solution until the thin film resistor material is exposed with a desired length, thereby forming the thin film resistor.

摘要翻译： 当设置在薄膜电阻器材料上的阻挡金属被湿蚀刻以暴露作为薄膜电阻器的下面的薄膜电阻器材料时，在第一和第二步骤中进行湿蚀刻。 第一步是使用H 2 O 2 / NH 4 OH溶液进行，并在薄膜电阻材料暴露之前停止。 然后，使用H 2 O 2 / H 2 O溶液进行第二步骤，直到薄膜电阻材料以期望的长度曝光，从而形成薄膜电阻器。