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    PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT
    6.
    发明申请
    PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT 有权
    压电发电元件及使用压电发电元件生成电力的方法

    公开(公告)号：US20110278991A1

    公开(公告)日：2011-11-17

    申请号：US13191139

    申请日：2011-07-26

    申请人： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

    发明人： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

    IPC分类号： H02N2/18

    CPC分类号： H02N2/186 ,  H01L41/1134

    摘要： Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line.

    摘要翻译： 提供一种相对容易制造的能够产生大量电力的压电发电元件，同时包括耐外部振动损坏的桥式振动梁。 该元件包括支撑构件，条形振动梁，压电层和电极。 振动梁的第一和第二端固定在支撑构件上。 压电层和电极设置在振动梁的表面上。 当振动梁不振动时，振动梁在平面内延伸。 振动梁具有从固定到支撑构件的第一端延伸的第一部分，从固定到支撑构件的第二端延伸的第二部分，以及连接第一部分的与第一部分相对的端部的第三部分 端部和第二部分的与第二端相对的端部。 所述振动梁具有这样的形状：当从垂直于所述平面的方向观察时，所述第一部分延伸的第一方向是更靠近所述第二端的方向，并且所述第二部分延伸的第二方向是方向 更靠近第一端，第一和第二方向相对于连接第一端的中心和第二端的中心的直线大于0°且小于90°，​​并且第三部分 相交一次直线。

    Semiconductor device and method for fabricating the same
    10.
    发明申请
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070293007A1

    公开(公告)日：2007-12-20

    申请号：US11889231

    申请日：2007-08-10

    申请人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

    发明人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

    摘要翻译： 半导体器件包括：下阻氢膜; 形成在下部氢阻挡膜上并具有下部电极，电容绝缘膜和上部电极的电容器; 形成为覆盖电容器周围的层间绝缘膜; 以及覆盖电容器的顶部和侧部的上部氢阻挡膜。 在层间电介质膜中形成开口，该开口暴露出下阻氢膜位于电容器周围并在其间呈锥形并向上凸起的下阻氢膜，上阻氢膜沿着 开口的侧面和底面，并与开口中的下阻氢膜接触。