公开(公告)号：US07326596B2

公开(公告)日：2008-02-05

申请号：US11112408

申请日：2005-04-22

申请人： Markus Bickel ,  Ulrich Kelberlau

发明人： Markus Bickel ,  Ulrich Kelberlau

IPC分类号： H01L21/332

CPC分类号： H01L29/66272 ,  H01L23/481 ,  H01L23/585 ,  H01L24/48 ,  H01L29/0834 ,  H01L29/417 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/66393 ,  H01L29/74 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate. Compensation dopants are provided into the substrate after annealing the substrate for the second given time to compensate the out-diffusion of the dopants proximate the upper and lower surfaces. The dopants driven into the substrate define an isolation diffusion structure that extends from the upper surface to the lower surface.

摘要翻译： 一种用于形成高电压半导体功率器件的方法包括在第二导电性的衬底的上表面上提供第一导电性的第一掺杂源。 第一导电性的第二掺杂剂源提供在衬底的下表面上。 将衬底退火第一给定时间以将掺杂剂从第一和第二掺杂剂源驱动到衬底中。 从衬底的上表面和下表面去除第一和第二掺杂剂源。 在去除第一和第二掺杂剂源之后，将衬底退火第二给定时间以均匀化衬底内的掺杂剂浓度，其中在第二给定时间退火衬底导致靠近上表面和下表面的掺杂剂的扩散 的基底。 在第二给定时间退火衬底之后，将补偿掺杂物提供到衬底中，以补偿靠近上表面和下表面的掺杂剂的扩散。 驱动到衬底中的掺杂剂限定了从上表面延伸到下表面的隔离扩散结构。

公开(公告)号：US20050239259A1

公开(公告)日：2005-10-27

申请号：US11112408

申请日：2005-04-22

申请人： Markus Bickel ,  Ulrich Kelberlau

发明人： Markus Bickel ,  Ulrich Kelberlau

IPC分类号： H01L21/329 ,  H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L23/48 ,  H01L23/58 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/74

CPC分类号： H01L29/66272 ,  H01L23/481 ,  H01L23/585 ,  H01L24/48 ,  H01L29/0834 ,  H01L29/417 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/66393 ,  H01L29/74 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for forming a high voltage semiconductor power device comprises providing a first dopant source of first conductivity on an upper surface of a substrate of second conductivity. A second dopant source of first conductivity is provided on a lower surface of the substrate. The substrate is annealed for a first given time to drive the dopants from the first and second dopants sources into the substrate. The first and second dopant sources are removed from the upper and lower surfaces of the substrate. The substrate is annealed for a second given time to homogenize dopant concentration within the substrate after the first and second dopant sources have been removed, where the annealing the substrate for the second given time results in out-diffusion of dopants proximate the upper and lower surfaces of the substrate. Compensation dopants are provided into the substrate after annealing the substrate for the second given time to compensate the out-diffusion of the dopants proximate the upper and lower surfaces. The dopants driven into the substrate define an isolation diffusion structure that extends from the upper surface to the lower surface.

摘要翻译： 一种用于形成高电压半导体功率器件的方法包括在第二导电性的衬底的上表面上提供第一导电性的第一掺杂源。 第一导电性的第二掺杂剂源提供在衬底的下表面上。 将衬底退火第一给定时间以将掺杂剂从第一和第二掺杂剂源驱动到衬底中。 从衬底的上表面和下表面去除第一和第二掺杂剂源。 在去除第一和第二掺杂剂源之后，将衬底退火第二给定时间以均匀化衬底内的掺杂剂浓度，其中在第二给定时间退火衬底导致靠近上表面和下表面的掺杂剂的扩散 的基底。 在第二给定时间退火衬底之后，将补偿掺杂物提供到衬底中，以补偿靠近上表面和下表面的掺杂剂的扩散。 驱动到衬底中的掺杂剂限定了从上表面延伸到下表面的隔离扩散结构。

公开(公告)号：US20060063313A1

公开(公告)日：2006-03-23

申请号：US11217134

申请日：2005-08-30

申请人： Ulrich Kelberlau ,  Peter Ingram ,  Nathan Zommer

发明人： Ulrich Kelberlau ,  Peter Ingram ,  Nathan Zommer

IPC分类号： H01L21/332 ,  H01L21/76 ,  H01L21/336

CPC分类号： H01L29/66333 ,  H01L29/0619 ,  H01L29/7395

摘要： A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.

公开(公告)号：US06936908B2

公开(公告)日：2005-08-30

申请号：US10099927

申请日：2002-03-13

申请人： Ulrich Kelberlau ,  Peter Ingram ,  Nathan Zommer

发明人： Ulrich Kelberlau ,  Peter Ingram ,  Nathan Zommer

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L29/06 ,  H01L29/739 ,  H01L29/00

CPC分类号： H01L29/66333 ,  H01L29/0619 ,  H01L29/7395

摘要： A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.

摘要翻译： 功率器件包括设置在第一导电类型的半导体衬底的有源区内的栅电极，源电极和漏电极。 在有源区域的周边设置有第二导电性的垂直扩散区域。 垂直扩散区域从衬底的顶表面连续延伸到衬底的底表面。 垂直扩散区域包括具有第一深度的上部部分和具有基本上大于第一深度的第二深度的下部部分。

公开(公告)号：US07619284B2

公开(公告)日：2009-11-17

申请号：US11672850

申请日：2007-02-08

申请人： Ulrich Kelberlau

发明人： Ulrich Kelberlau

IPC分类号： H01L27/62

CPC分类号： H01S5/06825 ,  H01L27/0255 ,  H01L29/0692 ,  H01L29/8605 ,  H01L29/861 ,  H01S5/02248 ,  H01S5/042

摘要： An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

摘要翻译： 一种过电压保护装置，包括：包括上表面和下表面的基板; 设置在所述基板的上表面上的第一电极; 设置在所述基板的下表面上的第二电极; 覆盖所述基板的下表面的第一导电层，所述第一导电区域是第一类型的导电区域; 设置在所述基板的上表面附近的多个第一导电区域，所述多个第一导电区域是所述第一类型的导电区域; 以及靠近所述衬底的上表面设置的多个第二导电区域，所述多个第二导电区域是第二类型的导电区域。 多个第一导电区域以多个第二导电区域交替地设置。 第一电极接触多个第一和第二导电区域。

公开(公告)号：US07259440B2

公开(公告)日：2007-08-21

申请号：US11088009

申请日：2005-03-22

申请人： Ulrich Kelberlau

发明人： Ulrich Kelberlau

IPC分类号： H01L23/58

CPC分类号： H01L29/167 ,  H01L29/32 ,  H01L29/8611

摘要： A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n− layer, respectively, and extend from the upper surface of the n− layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n− layer. A second electrode is provided proximate the lower surface of the n− layer.

摘要翻译： 快速开关二极管包括具有上表面和下表面的第n层和第一边缘和第二边缘，第二边缘设置在第一边缘的相对侧上。 在n层的上表面附近设置转换区域。 转换区域包括铂金并具有第一深度。 转化区域的铂浓度基本上大于转化区域中的n型掺杂剂浓度。 第一和第二n +区分别设置在n层的第一和第二边缘附近，并且分别从n层的上表面延伸到第二和第三深度。 第二和第三深度中的每一个都大于第一深度以减小漏电流。 在n层的上表面附近提供第一电极。 靠近n层的下表面设置第二电极。

公开(公告)号：US07442630B2

公开(公告)日：2008-10-28

申请号：US11217134

申请日：2005-08-30

申请人： Ulrich Kelberlau ,  Peter Ingram ,  Nathan Zommer

发明人： Ulrich Kelberlau ,  Peter Ingram ,  Nathan Zommer

IPC分类号： H01L21/04

CPC分类号： H01L29/66333 ,  H01L29/0619 ,  H01L29/7395

摘要： A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.

摘要翻译： 功率器件包括设置在第一导电类型的半导体衬底的有源区内的栅电极，源电极和漏电极。 在有源区域的周边设置有第二导电性的垂直扩散区域。 垂直扩散区域从衬底的顶表面连续延伸到衬底的底表面。 垂直扩散区域包括具有第一深度的上部部分和具有基本上大于第一深度的第二深度的下部部分。

公开(公告)号：US20050218430A1

公开(公告)日：2005-10-06

申请号：US11088009

申请日：2005-03-22

申请人： Ulrich Kelberlau

发明人： Ulrich Kelberlau

IPC分类号： H01L21/82 ,  H01L27/10 ,  H01L29/167 ,  H01L29/32 ,  H01L29/861

CPC分类号： H01L29/167 ,  H01L29/32 ,  H01L29/8611

摘要： A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n− layer, respectively, and extend from the upper surface of the n− layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n− layer. A second electrode is provided proximate the lower surface of the n− layer.

摘要翻译： 快速开关二极管包括具有上表面和下表面的第n层和第一边缘和第二边缘，第二边缘设置在第一边缘的相对侧上。 在n层的上表面附近设置转换区域。 转换区域包括铂金并具有第一深度。 转化区域的铂浓度基本上大于转化区域中的n型掺杂剂浓度。 第一和第二n +区分别设置在n层的第一和第二边缘附近，并且分别从n层的上表面延伸到第二和第三深度。 第二和第三深度中的每一个都大于第一深度以减小漏电流。 在n层的上表面附近提供第一电极。 靠近n层的下表面设置第二电极。

公开(公告)号：US20050051862A1

公开(公告)日：2005-03-10

申请号：US10930276

申请日：2004-08-30

申请人： Ulrich Kelberlau

发明人： Ulrich Kelberlau

IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/8605 ,  H01L29/861 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/068 ,  H01L23/58

CPC分类号： H01S5/06825 ,  H01L27/0255 ,  H01L29/0692 ,  H01L29/8605 ,  H01L29/861 ,  H01S5/02248 ,  H01S5/042

摘要： An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

摘要翻译： 一种过电压保护装置，包括：包括上表面和下表面的基板; 设置在所述基板的上表面上的第一电极; 设置在所述基板的下表面上的第二电极; 覆盖所述基板的下表面的第一导电层，所述第一导电区域是第一类型的导电区域; 设置在所述基板的上表面附近的多个第一导电区域，所述多个第一导电区域是所述第一类型的导电区域; 以及靠近所述衬底的上表面设置的多个第二导电区域，所述多个第二导电区域是第二类型的导电区域。 多个第一导电区域以多个第二导电区域交替地设置。 第一电极接触多个第一和第二导电区域。

公开(公告)号：US08093652B2

公开(公告)日：2012-01-10

申请号：US10650451

申请日：2003-08-27

申请人： Subhas C. Bose Jayappa Veeramma ,  Ulrich Kelberlau

发明人： Subhas C. Bose Jayappa Veeramma ,  Ulrich Kelberlau

IPC分类号： H01L29/76

CPC分类号： H01L29/0834 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/861

摘要： A power device includes a semiconductor substrate of first conductivity having an upper surface and a lower surface. An isolation diffusion region of second conductivity is provided at a periphery of the substrate and extends from the upper surface to the lower surface of the substrate. The isolation diffusion region has a first surface corresponding to the upper surface of the substrate and a second surface corresponding to the lower surface. A peripheral junction region of second conductivity is formed at least partly within the isolation diffusion region and formed proximate the first surface of the isolation diffusion region. First and second terminals are provided.

摘要翻译： 功率器件包括具有上表面和下表面的第一导电性半导体衬底。 在基板的周边设置有第二导电性的隔离扩散区域，从基板的上表面延伸到下表面。 隔离扩散区域具有对应于基板的上表面的第一表面和对应于下表面的第二表面。 至少部分地在隔离扩散区域内形成具有第二导电性的外围连接区域，并且形成在隔离扩散区域的第一表面附近。 提供第一和第二端子。