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25 条记录 (耗时 0.019 秒)

    Reflecting device for electromagnetic waves
    1.
    发明授权
    Reflecting device for electromagnetic waves 失效
    电磁波反射装置

    公开(公告)号：US07077533B2

    公开(公告)日：2006-07-18

    申请号：US10477772

    申请日：2002-05-28

    申请人： Martin Weiser ,  Udo Dinger ,  Siegfried Stacklies ,  Markus Haidl

    发明人： Martin Weiser ,  Udo Dinger ,  Siegfried Stacklies ,  Markus Haidl

    IPC分类号： G02B5/08

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/2008 ,  G03F7/70958 ,  G21K1/06

    摘要： A device serves for reflecting electromagnetic waves, in particular in a length range less than 200 nm. It has a mirror carrier made of a material with at least approximately vanishing thermal expansion and at least one reflective layer applied on said mirror carrier. An intermediate layer made of a material which is formed such that its surface roughness is not significantly increased after beam processing methods is fitted between the mirror carrier and the reflective layer.

    摘要翻译： 装置用于反射电磁波，特别是在小于200nm的长度范围内。 它具有由至少近乎消失的热膨胀的材料制成的反射镜载体，并且至少一个反射层施加在所述反射镜载体上。 由在反射镜载体和反射层之间装配光束处理方法之后形成为使得其表面粗糙度不显着增加的材料制成的中间层。

    Method of manufacturing an optical element
    2.
    发明授权
    Method of manufacturing an optical element 有权
    制造光学元件的方法

    公开(公告)号：US07118449B1

    公开(公告)日：2006-10-10

    申请号：US10943952

    申请日：2004-09-20

    申请人： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

    发明人： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

    IPC分类号： B24B49/00 ,  B24B51/00 ,  B24B1/00

    CPC分类号： B24B13/06 ,  B24B51/00

    摘要： A method of manufacturing an optical element having an optical surface extending close to a periphery of a substrate comprises: providing a substrate having a main surface extending beyond a periphery of the optical surface and also performing a polishing of the optical surface in regions of the main surface extending beyond the optical surface. Thereafter, material of the substrate carrying a portion of the surface extending beyond the optical surface is removed.

    摘要翻译： 一种制造具有靠近基板周边延伸的光学表面的光学元件的方法包括：提供具有延伸超过光学表面的周边的主表面的基板，并且还在主体的区域中执行光学表面的抛光 表面延伸超出光学表面。 此后，去除承载延伸超过光学表面的表面的一部分的基板的材料。

    Mirror for use in a projection exposure apparatus
    3.
    发明授权
    Mirror for use in a projection exposure apparatus 有权
    用于投影曝光装置的镜子

    公开(公告)号：US07481543B1

    公开(公告)日：2009-01-27

    申请号：US11523396

    申请日：2006-09-18

    申请人： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

    发明人： Udo Dinger ,  Frank Eisert ,  Siegfried Stacklies ,  Martin Weiser ,  Guenther Seitz

    IPC分类号： G02B5/10

    CPC分类号： B24B13/06 ,  B24B51/00

    摘要： A mirror for use in a projection exposure apparatus is described. The mirror has a main surface extending beyond an outline of an optical surface of the main surface. The optical surface has a roughness of less than 1 nm rms, and the outline of the optical surface includes a portion where the main surface extends beyond the optical surface by less than 0.2 mm. Manufacturing the mirror may involve polishing the optical surface in regions of the main surface extending beyond the optical surface and removing material of the substrate carrying a portion of the surface extending beyond the optical surface.

    摘要翻译： 描述了用于投影曝光装置的反射镜。 反射镜具有延伸超过主表面的光学表面轮廓的主表面。 光学表面具有小于1nm的粗糙度，并且光学表面的轮廓包括主表面延伸超过光学表面小于0.2mm的部分。 制造反射镜可以包括在主表面延伸超过光学表面的区域中抛光光学表面，并去除承载延伸超过光学表面的表面的一部分的基板的材料。

    Substrate material for X-ray optical components
    4.
    发明授权
    Substrate material for X-ray optical components 失效
    X射线光学部件用基板材料

    公开(公告)号：US07031428B2

    公开(公告)日：2006-04-18

    申请号：US10779516

    申请日：2004-02-13

    申请人： Udo Dinger ,  Frank Eisert ,  Martin Weiser ,  Konrad Knapp ,  Ina Mitra ,  Hans Morian

    发明人： Udo Dinger ,  Frank Eisert ,  Martin Weiser ,  Konrad Knapp ,  Ina Mitra ,  Hans Morian

    IPC分类号： G21K5/04 ,  G21K1/06 ,  C03C10/00

    CPC分类号： G21K1/06 ,  C03C10/0009 ,  C03C19/00 ,  C03C23/0055 ,  C03C2204/08

    摘要： There is provided a substrate material for an optical component for X-rays of wavelength λR. The substrate includes (a) a glass phase made of amorphous material having a positive coefficient of thermal expansion, and (b) a crystal phase including microcrystallites having a negative coefficient of thermal expansion and a mean size of less than about 4 λR. The substrate material has a stoichiometric ratio of the crystal phase to the glass phase such that a coefficient of thermal expansion of the substrate material is less than about 5×10−6 K−1 in a temperature range of about 20 °C. to 100°C. The substrate material, following a surface treatment, has a high spatial frequency roughness (HSFR) of less than about λR/30 rms.

    摘要翻译： 提供了用于波长λλX的X射线的光学部件的基板材料。 该基板包括（a）由具有正的热膨胀系数的非晶材料制成的玻璃相，和（b）包含具有负的热膨胀系数和平均尺寸小于约4λλ的微晶的结晶相， R 。 衬底材料具有晶相与玻璃相的化学计量比，使得衬底材料的热膨胀系数小于约5×10 -6 K -1 在约20℃的温度范围内。 至100℃。 在表面处理之后，衬底材料具有小于约λ/ 30 / 30rms的高空间频率粗糙度（HSFR）。

    Removing reflective layers from EUV mirrors
    9.
    发明授权
    Removing reflective layers from EUV mirrors 有权
    从EUV镜子中去除反射层

    公开(公告)号：US07919004B2

    公开(公告)日：2011-04-05

    申请号：US12534659

    申请日：2009-08-03

    申请人： Martin Weiser ,  Olaf Bork ,  Ulrich Andiel

    发明人： Martin Weiser ,  Olaf Bork ,  Ulrich Andiel

    IPC分类号： B29D11/00

    CPC分类号： G02B5/0825 ,  C23F4/00 ,  G02B5/0891 ,  G03F1/24 ,  G03F1/72

    摘要： A method for removing at least one reflective layer (4a, 4b) from an optical element (1) for EUV lithography, wherein the optical element (1) has a substrate (2) and an interlayer (6) between the substrate (2) and the at least one reflective layer (4a, 4b). The method includes etching away the at least one reflective layer (4a, 4b) as far as the interlayer (6) with an etching gas (7), wherein the material of the interlayer (6) does not react with the etching gas (7), and wherein, after the etching away, the interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms. Also, an optical element (1) for reflecting radiation in the EUV wavelength range includes a substrate (2), at least one reflective layer (4a, 4b), and an interlayer (6) arranged between the substrate (2) and the at least one reflective layer (4a, 4b). The interlayer (6) is composed at least partly of a material which does not react with a halogen or a halogen compound as etching gas (7) and which is selected, in particular, from one or more of the following: alkali metal halides, alkaline earth metal halides and aluminum oxide (Al2O3). The interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms.

    摘要翻译： 一种用于从用于EUV光刻的光学元件（1）去除至少一个反射层（4a，4b）的方法，其中所述光学元件（1）在所述基板（2）之间具有基板（2）和中间层（6） 和所述至少一个反射层（4a，4b）。 该方法包括使用蚀刻气体（7）将至少一个反射层（4a，4b）蚀刻掉至中间层（6），其中中间层（6）的材料不与蚀刻气体（7）反应 ），并且其中在蚀刻之后，中间层（6）具有小于0.5nm rms，优选小于0.2nm rms，更优选小于0.1nm rms的表面粗糙度。 此外，用于反射EUV波长范围的辐射的光学元件（1）包括基板（2），至少一个反射层（4a，4b）和布置在基板（2）和基板 至少一个反射层（4a，4b）。 中间层（6）至少部分由不与卤素或卤素化合物作为蚀刻气体（7）反应的材料组成，特别是选自以下的一种或多种：碱金属卤化物， 碱土金属卤化物和氧化铝（Al2O3）。 中间层（6）具有小于0.5nm rms，优选小于0.2nm rms，更优选小于0.1nm rms的表面粗糙度。