摘要:
The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.
摘要:
The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.
摘要:
The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.
摘要:
The invention includes solder materials having low concentrations of alpha particle emitters, and includes methods of purification of materials to reduce a concentration of alpha particle emitters within the materials. The invention includes methods of reducing alpha particle flux in various lead-containing and lead-free materials through purification of the materials. The invention also includes methods of estimating the fractionation of a low concentration of one or more alpha particle emitters during purification of a material.
摘要:
Lead free solder compositions are described herein that include at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Several doped solder compositions described herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant. Methods of forming doped solder materials include: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to form a doped solder material. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder composition comprising at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder composition comprising at least one phosphorus-based dopant and at least one copper-based dopant, such as those described herein, and d) a semiconductor die or package. Electronic and semiconductor components that comprise solder compositions and/or layered materials described herein are also contemplated.
摘要:
A thermally conductive material that includes an alloy which includes indium, zinc, magnesium or a combination thereof is described herein. Also, a semiconductor package comprising a thermal interface material which includes solder and particles dispersed throughout the solder, the particles being of thermal conductivity greater than or equal to about 80 W/m-K is described herein. In one described embodiment, a semiconductor package includes a thermal interface material which includes at least one lanthanide element. In yet another embodiment disclosed herein, a solder preform construction includes a solder and a structure within the solder, the solder being of a first composition and the structure being of a second composition which has a lower melting point than the first composition. In another embodiment disclosed herein, an assembly comprising: a heat spreader; and a solder preform construction bonded to the heat spreader, the solder preform construction including a solder of a first composition, and a region within the solder of a second composition which has a lower melting point than the first composition. Methods of forming layered thermal interface materials and thermal transfer materials include: a) providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; b) providing at least one solder material, wherein the solder material is directly deposited onto the bottom surface of the heat spreader component; and c) depositing the at least one solder material onto the bottom surface of the heat spreader component.
摘要:
The invention includes a semiconductor package which comprises a semiconductor substrate and a heat spreader. A thermal interface material thermally connects the substrate to the heat spreader. The thermal interface material consists essentially of In, Zn, and one or more elements selected from the group consisting of Mg, Ca, Nb, Ta, B, Al, Ce, Ti and Zr. The invention also includes a composition consisting essentially of In and Zn. The Zn concentration within the composition is from about 0.5 weight % to about 3 weight %. The invention also includes a composition consisting essentially of In, Zn and one or more of Mg, Ca, Nb, Ta, B, Al, Ce, Ti and Zr.
摘要:
The invention includes anodes for electroplating, baths. The anodes have a purity of at least 99.9%, and comprise one or more of silver, gold, nickel, chromium, copper or various solder compositions. The anodes can, for example, comprise at least 99.995% copper/phosphorus alloy, by weight; or at least 99.995% nickel and sulfur, by weight. The invention also includes methods of electroplating, materials over semiconductor substrates.
摘要:
Solder compositions are described that include at least about 2% of silver, at least about 60% of bismuth, and at least one coupling element, wherein the at least one coupling element forms a complex with bismuth. Layered materials are also described that include a surface or substrate; an electrical interconnect; the solder composition described herein; and a semiconductor die or package. Methods of producing a solder composition are also described that include: a) providing at least about 2% of silver, b) providing at least about 60% of bismuth, c) providing at least one coupling element, wherein the at least one coupling element forms a complex with bismuth, and d) blending the silver, bismuth and at least one coupling element to form the solder composition.
摘要:
A method of manufacturing an optical element having an optical surface extending close to a periphery of a substrate comprises: providing a substrate having a main surface extending beyond a periphery of the optical surface and also performing a polishing of the optical surface in regions of the main surface extending beyond the optical surface. Thereafter, material of the substrate carrying a portion of the surface extending beyond the optical surface is removed.