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1.发明授权公开(公告)号：US08836130B2
公开(公告)日：2014-09-16
申请号：US13333569
申请日：2011-12-21
申请人： Masafumi Kuramoto , Satoru Ogawa , Teppei Kunimune
发明人： Masafumi Kuramoto , Satoru Ogawa , Teppei Kunimune
CPC分类号： H01L21/187 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/0401 , H01L2224/05639 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29386 , H01L2224/32225 , H01L2224/812 , H01L2224/81801 , H01L2224/81894 , H01L2224/83411 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83801 , H01L2224/8383 , H01L2224/85205 , H01L2924/0001 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2924/0541 , H01L2924/00014 , H01L2224/29199 , H01L2224/29299 , H01L2224/83205
摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.
摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 在半导体装置中，配置在半导体元件上的银和布置在基底上的银结合。 不存在空隙，或半导体元件与布置在半导体元件上的银之间的界面存在小空隙（如果有的话），则不存在空隙，或者存在小空隙（如果有的话）存在于基底 并且布置在基底上的银和在布置在半导体元件上的银和布置在基底上的银之间的结合界面中存在一个或多个银异常生长晶粒和一个或多个空隙。
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公开(公告)号：US20120153486A1
公开(公告)日：2012-06-21
申请号：US13333569
申请日：2011-12-21
申请人： Masafumi KURAMOTO , Satoru Ogawa , Teppei Kunimune
发明人： Masafumi KURAMOTO , Satoru Ogawa , Teppei Kunimune
IPC分类号： H01L23/488 , H01L33/62
CPC分类号： H01L21/187 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/0401 , H01L2224/05639 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29386 , H01L2224/32225 , H01L2224/812 , H01L2224/81801 , H01L2224/81894 , H01L2224/83411 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83801 , H01L2224/8383 , H01L2224/85205 , H01L2924/0001 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2924/0541 , H01L2924/00014 , H01L2224/29199 , H01L2224/29299 , H01L2224/83205
摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.
摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 在半导体装置中，配置在半导体元件上的银和布置在基底上的银结合。 不存在空隙，或半导体元件与布置在半导体元件上的银之间的界面存在小空隙（如果有的话），则不存在空隙，或者存在小空隙（如果有的话）存在于基底 并且布置在基底上的银和在布置在半导体元件上的银和布置在基底上的银之间的结合界面中存在一个或多个银异常生长晶粒和一个或多个空隙。
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