公开(公告)号：US08836130B2

公开(公告)日：2014-09-16

申请号：US13333569

申请日：2011-12-21

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Teppei Kunimune

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Teppei Kunimune

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/18 ,  H01L23/00 ,  H01L33/62

CPC分类号： H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/85205 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/83205

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 在半导体装置中，配置在半导体元件上的银和布置在基底上的银结合。 不存在空隙，或半导体元件与布置在半导体元件上的银之间的界面存在小空隙（如果有的话），则不存在空隙，或者存在小空隙（如果有的话）存在于基底 并且布置在基底上的银和在布置在半导体元件上的银和布置在基底上的银之间的结合界面中存在一个或多个银异常生长晶粒和一个或多个空隙。

公开(公告)号：US20120153486A1

公开(公告)日：2012-06-21

申请号：US13333569

申请日：2011-12-21

申请人： Masafumi KURAMOTO ,  Satoru Ogawa ,  Teppei Kunimune

发明人： Masafumi KURAMOTO ,  Satoru Ogawa ,  Teppei Kunimune

IPC分类号： H01L23/488 ,  H01L33/62

CPC分类号： H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/05639 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/85205 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/83205

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 在半导体装置中，配置在半导体元件上的银和布置在基底上的银结合。 不存在空隙，或半导体元件与布置在半导体元件上的银之间的界面存在小空隙（如果有的话），则不存在空隙，或者存在小空隙（如果有的话）存在于基底 并且布置在基底上的银和在布置在半导体元件上的银和布置在基底上的银之间的结合界面中存在一个或多个银异常生长晶粒和一个或多个空隙。

公开(公告)号：US20100187563A1

公开(公告)日：2010-07-29

申请号：US12691947

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L33/00 ,  H01L21/60

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US20100190298A1

公开(公告)日：2010-07-29

申请号：US12691999

申请日：2010-01-22

申请人： Masafumi KURAMOTO ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi KURAMOTO ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/60

CPC分类号： H01L33/641 ,  H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，并且通过对温度为200〜900℃的热进行加热而将半导体元件和基板接合到 半导体器件和基极。

公开(公告)号：US20100186999A1

公开(公告)日：2010-07-29

申请号：US12596339

申请日：2009-01-09

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Katsuaki Suganuma ,  Keun-Soo Kim

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Katsuaki Suganuma ,  Keun-Soo Kim

IPC分类号： H05K1/09 ,  B22F3/10 ,  C22C5/06 ,  B23K31/02 ,  B23K1/20

CPC分类号： H01L33/62 ,  B23K1/0008 ,  B23K1/0016 ,  B23K35/025 ,  H01B1/02 ,  H01L2924/0002 ,  H01L2933/0066 ,  H05K1/092 ,  Y10T29/49144 ,  H01L2924/00

摘要： An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

摘要翻译： 本发明的目的是提供一种能够产生低电阻的导电材料的制造方法，并且是通过使用不含粘合剂的廉价且稳定的导电材料组合物获得的。 导电材料可以通过包括烧结含有平均粒径（中值粒径）为0.1μm〜15μm的银粒子和金属氧化物的第一导电材料组合物的制造方法来提供，以获得 导电材料。 导电材料也可以通过包括在氧气或臭氧或环境气氛中烧结含有平均粒径（中值粒径）为0.1μm〜15μm的银粒子的第二导电材料组合物的工序的方法 气氛中，在150℃至320℃的温度范围内，以获得导电材料。

公开(公告)号：US08968608B2

公开(公告)日：2015-03-03

申请号：US12596339

申请日：2009-01-09

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Katsuaki Suganuma ,  Keun-Soo Kim

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Katsuaki Suganuma ,  Keun-Soo Kim

IPC分类号： H01B1/02 ,  H01B1/22 ,  H01L33/62 ,  H05K1/09

CPC分类号： H01L33/62 ,  B23K1/0008 ,  B23K1/0016 ,  B23K35/025 ,  H01B1/02 ,  H01L2924/0002 ,  H01L2933/0066 ,  H05K1/092 ,  Y10T29/49144 ,  H01L2924/00

摘要： An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 μm to 15 μm in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150° C. to 320° C., so as to obtain a conductive material.

摘要翻译： 本发明的目的是提供一种能够产生低电阻的导电材料的制造方法，并且是通过使用不含粘合剂的廉价且稳定的导电材料组合物获得的。 导电材料可以通过包括烧结含有平均粒径（中值粒径）为0.1μm〜15μm的银粒子和金属氧化物的第一导电材料组合物的制造方法来提供，以获得 导电材料。 导电材料也可以通过包括在氧气或臭氧或环境气氛中烧结含有平均粒径（中值粒径）为0.1μm〜15μm的银粒子的第二导电材料组合物的工序的方法 气氛中，在150℃至320℃的温度范围内，以获得导电材料。

公开(公告)号：US08642392B2

公开(公告)日：2014-02-04

申请号：US12691947

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/44

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US20110186340A1

公开(公告)日：2011-08-04

申请号：US12991843

申请日：2010-07-21

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

IPC分类号： H05K1/18 ,  H01B1/22

CPC分类号： H01B1/22 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48097 ,  H01L2224/48247 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012 ,  H01L2224/48455

摘要： The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 μm to 10 μm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.

摘要翻译： 本发明的目的是提供一种具有低电阻率且使用廉价且稳定的导电材料组合物获得的导电材料的制造方法。 可以通过包括加热含有全固化或半固化的热固性树脂和热塑性树脂中的至少一种的导电材料组合物以及银颗粒的方法来获得具有低电阻率的导电材料。 这种导电材料是包含熔融银颗粒的导电材料和平均粒径为0.1μm至10μm的热固性树脂细颗粒，并且分散在熔融银颗粒中。 此外，这种导电材料是包含熔融银颗粒的导电材料和在熔融银颗粒之间焊接的热塑性树脂。

公开(公告)号：US09011728B2

公开(公告)日：2015-04-21

申请号：US12991843

申请日：2010-07-21

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

IPC分类号： H01B1/00 ,  H01B1/22 ,  H01L23/00

CPC分类号： H01B1/22 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48097 ,  H01L2224/48247 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012 ,  H01L2224/48455

摘要： The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 μm to 10 μm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.

摘要翻译： 本发明的目的是提供一种具有低电阻率且使用廉价且稳定的导电材料组合物获得的导电材料的制造方法。 可以通过包括加热含有全固化或半固化的热固性树脂和热塑性树脂中的至少一种的导电材料组合物以及银颗粒的方法来获得具有低电阻率的导电材料。 这种导电材料是包含熔融银颗粒的导电材料和平均粒径为0.1μm至10μm的热固性树脂细颗粒，并且分散在熔融银颗粒中。 此外，这种导电材料是包含熔融银颗粒的导电材料和在熔融银颗粒之间焊接的热塑性树脂。

公开(公告)号：US08679898B2

公开(公告)日：2014-03-25

申请号：US12691999

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/60

CPC分类号： H01L33/641 ,  H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，并且通过对温度为200〜900℃的热进行加热而将半导体元件和基板接合到 半导体器件和基极。