Electron beam apparatus and an aberration correction optical apparatus
    1.
    发明授权
    Electron beam apparatus and an aberration correction optical apparatus 有权
    电子束装置和像差校正光学装置

    公开(公告)号:US07863580B2

    公开(公告)日:2011-01-04

    申请号:US11760235

    申请日:2007-06-08

    IPC分类号: G21K1/08 H01J3/14 H01J3/26

    摘要: An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.

    摘要翻译: 一种用于提供诸如半导体晶片的样品的评估的电子束装置,其包括具有不大于0.1μm的最小线宽的微图案,具有高生产量。 由电子枪产生的一次电子束照射在样品上,从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。 电子枪61具有阴极1和牵伸电极3,阴极的电子发射表面1a限定凹面。 拉制电极3具有由与阴极的电子发射表面1a相对的第二球体的局部外表面和由电子通过凸面形成的孔73构成的凸面3a。 像差校正光学装置包括两个相同尺寸的多极维纳滤光器,其布置成使得它们的中心分别沿着像差校正光学装置中的物平面图像平面段与¼平面位置和¾平面位置对准, 以及分别设置在像差校正光学装置中的物平面位置,中间图像形成面位置和像面位置的具有双向焦点的光学元件。