Self-sustained pulsating laser diode
    1.
    发明授权
    Self-sustained pulsating laser diode 有权
    自持脉动激光二极管

    公开(公告)号:US06847666B2

    公开(公告)日:2005-01-25

    申请号:US09819969

    申请日:2001-03-28

    摘要: A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1×1017 cm−3 and no greater than 5×1017 cm−3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.

    摘要翻译: 一种自持脉动激光二极管,其中有源层中的区域用作可饱和吸收体具有至少五个且不超过十个量子阱,层厚度至少为300nm的p型包层平坦部分和没有 大于500nm的p型包覆层平坦部分,载流子密度为至少1×10 17 cm -3且不大于5×10 17 cm -3。 该激光二极管与横向的光分布相比,实现了足够小的电流分布,从而能够在高温下稳定地进行自持脉动操作,这在以往难以实现。

    Light emitting semiconductor element capable of suppressing change of driving current
    2.
    发明授权
    Light emitting semiconductor element capable of suppressing change of driving current 有权
    能够抑制驱动电流的变化的发光半导体元件

    公开(公告)号:US06324201B1

    公开(公告)日:2001-11-27

    申请号:US09200060

    申请日:1998-11-25

    IPC分类号: H01S520

    摘要: A light emitting semiconductor element comprises a first additive layer which is added into a cladding layer or a middle layer. The first additive layer has a lattice constant which is different from a lattice constant of a semiconductor substrate. The light emitting semiconductor element is attached to a heat sink to form a laser device. The heat sink gives deformation to the light emitting semiconductor element. The first additive layer generates strain therein and suppresses influence of the deformation.

    摘要翻译: 发光半导体元件包括添加到包覆层或中间层中的第一添加剂层。 第一添加层具有与半导体基板的晶格常数不同的晶格常数。 发光半导体元件附接到散热器以形成激光器件。 散热器使发光半导体元件变形。 第一添加剂层在其中产生应变并抑制变形的影响。

    Heat-shrinkable laminate film
    3.
    发明授权
    Heat-shrinkable laminate film 失效
    热收缩层压膜

    公开(公告)号:US4547433A

    公开(公告)日:1985-10-15

    申请号:US439582

    申请日:1982-11-05

    摘要: Disclosed herein is a heat-shrinkable laminate film excellent in gas-barrier property and oil-resistance and heat-sealing resistance, comprisinga core layer of a gas-barrier resin which is a copolymer of vinylidene chloride or a copolymer of ethylene and vinyl alcohol, the outer layer (A) of a resin which is a copolymer (I) of ethylene and alpha-olefine having specific gravity of 0.900 to 0.950 and of a crystal melting point of 110.degree. to 130.degree. C. or a mixture of more than 20% by weight of the copolymer (I) and less than 80% by weight of a copolymer (II) of ethylene and vinyl acetate having crystal melting point of 80.degree. to 103.degree. C., the other outer layers (B) of a resin which is a cross-linked material formed from a polymer selected from the group consisting of the copolymer (I), the copolymer (II) and mixture of the copolymer (I) and the copolymer (II) by exposing the polymer to an ionizing irradiation, and two adhesive layers disposed between the core layer and the outer layers (A) and (B).

    摘要翻译: 本发明是一种耐气体阻隔性,耐油性和耐热封性优异的热收缩层压膜,其包含作为偏二氯乙烯或乙烯与乙烯醇的共聚物的共聚物的阻气性树脂的芯层 ,作为乙烯和α-烯烃的共聚物(I)的树脂的外层(A),比重为0.900〜0.950,结晶熔点为110〜130℃,或者混合比 20重量%的共聚物(I)和小于80重量%的乙烯和乙酸乙烯酯的共聚物(II),其结晶熔点为80-103℃,其它外层(B)为 树脂,其是由选自共聚物(I),共聚物(II)和共聚物(I)和共聚物(II)的混合物的聚合物形成的交联材料,通过将聚合物暴露于电离 照射,以及设置在芯层和外层之间的两个粘合剂层 (A)和(B)。

    Group III nitride compound semiconductor light-emitting device
    4.
    发明授权
    Group III nitride compound semiconductor light-emitting device 有权
    III族氮化物化合物半导体发光器件

    公开(公告)号:US07737431B2

    公开(公告)日:2010-06-15

    申请号:US11572306

    申请日:2006-07-14

    申请人: Masaki Ohya

    发明人: Masaki Ohya

    IPC分类号: H01L31/00

    摘要: A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1

    摘要翻译: 根据本发明的III族氮化物化合物半导体发光器件包括:由III族氮化物化合物半导体构成的有源层(105); 电流阻挡层(108),其形成在有源层(105)上并具有条纹孔(108a); 埋入孔(108a)的超晶格层(p型层109),由包含Al的III族氮化物化合物半导体构成; 以及形成在超晶格层上并由包括Al的III族氮化物化合物半导体构成的包层(110)。 当超晶格层的平均Al组成比表示为x1,将包覆层(110)的平均Al组成比表示为x2时,将其表示为x1

    Group III Nitride Compound Semiconductor Light-Emitting Device
    6.
    发明申请
    Group III Nitride Compound Semiconductor Light-Emitting Device 有权
    III族氮化物复合半导体发光器件

    公开(公告)号:US20080303017A1

    公开(公告)日:2008-12-11

    申请号:US11572306

    申请日:2006-07-14

    申请人: Masaki Ohya

    发明人: Masaki Ohya

    IPC分类号: H01L33/00

    摘要: A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer 109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1

    摘要翻译: 根据本发明的III族氮化物化合物半导体发光器件包括:由III族氮化物化合物半导体构成的有源层(105); 电流阻挡层(108),其形成在有源层(105)上并具有条纹孔(108a); 埋入孔(108a)的超晶格层(p型层109),由包含Al的III族氮化物化合物半导体构成; 以及形成在超晶格层上并由包括Al的III族氮化物化合物半导体构成的包层(110)。 当超晶格层的平均Al组成比表示为x1,将包覆层(110)的平均Al组成比表示为x2时,将其表示为x1

    Heat-resistant and oil-resistant laminate film and process for preparing
the same
    7.
    发明授权
    Heat-resistant and oil-resistant laminate film and process for preparing the same 失效
    耐热耐油层压膜及其制备方法

    公开(公告)号:US4699846A

    公开(公告)日:1987-10-13

    申请号:US625233

    申请日:1984-06-27

    摘要: Disclosed herein are a heat-resistant and oil-resistant laminate film comprising gas-barrier resin layer(s), thermoplastic resin layer(s) different from a gas-barrier resin and adhesive layer(s) disposed between the gas-barrier resin layer and the thermoplastic resin layer, produced by co-extruding a gas-barrier resin, a thermoplastic resin and an adhesive composition and irradiating the co-extruded laminate, the total number of the layers of the laminate film being not less than 3, and the adhesive layer comprising a cross-linked polymer and the adhesive composition consisting essentially of 100 parts by weight of a melt-extrudable adhesive resin and 0.1 to 50 parts by weight of a radiation-sensitive compound, and a process for producing the heat-resistant and oil-resistant laminate film.

    摘要翻译: 本发明公开了一种耐热且耐油的层压膜,其包含阻气性树脂层,与阻气性树脂不同的热塑性树脂层和设置在阻气性树脂层之间的粘合层 和热塑性树脂层,通过共挤出阻气性树脂,热塑性树脂和粘合剂组合物并照射共挤出的层压体,层叠膜的总数不小于3,并且 粘合剂层,其包含交联聚合物和基本上由100重量份的可熔融挤出的粘合剂树脂和0.1至50重量份的辐射敏感性化合物组成的粘合剂组合物,以及制备耐热和 耐油层压膜。

    Antistatic resin composition
    8.
    发明授权
    Antistatic resin composition 失效
    抗静电树脂组合物

    公开(公告)号:US4302558A

    公开(公告)日:1981-11-24

    申请号:US72846

    申请日:1979-09-06

    CPC分类号: C08L51/04

    摘要: A graft copolymer is obtained by graft-polymerizing a vinyl or vinylidene monomer onto a rubber trunk polymer which comprises a polyalkylene oxide monomer comprising 4 to 500 alkylene oxide groups together with an ethylenic unsaturation, and a conjugated diene and/or an alkyl acrylate. This graft copolymer alone or in a mixture thereof with another thermoplastic resin, because of the presence of the polyalkylene oxide monomer unit incorporated in the rubber trunk polymer, provides a resin composition possessing excellent antistatic property, which, practically, is not lowered by washing.

    摘要翻译: 通过将乙烯基或亚乙烯基单体接枝聚合到橡胶树脂聚合物上而获得接枝共聚物,橡胶树脂聚合物包含含有4-50个烯化氧基团和烯属不饱和基团的聚环氧烷单体和共轭二烯和/或丙烯酸烷基酯。 由于在橡胶树脂聚合物中引入的聚环氧烷单体单元的存在,单独或与其它热塑性树脂的混合物中的接枝共聚物提供了具有优异的抗静电性的树脂组合物,其实际上通过洗涤实际上不降低。

    Vinyl chloride resin composition containing polymeric processing aid
    9.
    发明授权
    Vinyl chloride resin composition containing polymeric processing aid 失效
    含有聚合物加工助剂的氯乙烯树脂组合物

    公开(公告)号:US4206292A

    公开(公告)日:1980-06-03

    申请号:US18321

    申请日:1979-03-07

    CPC分类号: C08L27/06 C08L33/10

    摘要: A vinyl chloride resin composition having surface smoothness comprises:(1) 100 parts of vinyl chloride polymer; and(2) 0.1 to 30 parts of a polymer processing aid comprising:(A) 10 to 100 parts of a copolymer comprising 20 to 99% of an alkyl methacrylate, 1 to 70% of a dialkyl itaconate, and 0 to 60% of a monomer copolymerizable therewith; and(B) 0 to 90 parts of a copolymer comprising 80 to 100% of an alkyl methacrylate, and 0 to 20% of a monomer copolymerizable therewith,the sum of the quantities of the copolymers (A) and (B) producing 100 parts of the polymer processing aid, all quantities expressed in parts and percentages being by weight.This vinyl chloride resin composition comprising a novel polymer processing aid not only shows an increased gelation rate, yields less ungelled particles and possesses excellent processability such as an increased elongation at a high temperature, but particularly affords a formed product of notably improved surface smoothness.

    摘要翻译: 具有表面光滑度的氯乙烯树脂组合物包括:(1)100份氯乙烯聚合物; 和(2)0.1〜30份聚合物加工助剂,其包含:(A)10至100份包含20至99%的甲基丙烯酸烷基酯,1至70%的衣康酸二烷基酯和0至60%的 可与其共聚的单体; 和(B)0至90份包含80至100%的甲基丙烯酸烷基酯和0至20%的可与其共聚的单体的共聚物,共聚物(A)和(B)的量的总和产生100份 的聚合物加工助剂,以重量百分数表示的所有数量。 包含新型聚合物加工助剂的氯乙烯树脂组合物不仅显示出增加的凝胶化速率,产生较少的未凝胶化颗粒,并且具有优异的可加工性,例如在高温下增加的伸长率,而且特别提供了显着提高的表面平滑度的成形产品。