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    Hybrid type onium salt
    1.
    发明授权
    Hybrid type onium salt 失效
    混合型鎓盐

    公开(公告)号：US07101918B2

    公开(公告)日：2006-09-05

    申请号：US10494481

    申请日：2002-11-01

    申请人： Masami Ishihara ,  Tsuneaki Maesawa ,  Yoji Urano

    发明人： Masami Ishihara ,  Tsuneaki Maesawa ,  Yoji Urano

    IPC分类号： C08F2/50 ,  G03F7/04 ,  C03C381/12

    CPC分类号： G03F7/0045 ,  C07C381/12 ,  C08F2/50 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392

    摘要： The present invention relates to a hybrid type onium salt having an iodonium salt and a sulfonium salt in the molecule, Useful, for example, as a cationic type photopolymerization initiator and an acid generator for a chemically amplified resist and provides a hybrid type onium salt shown by the general formula [1]: and R4 is an alkyl group, an alkenyl group, an aryl group or an aralkyl group, which may have a substituent selected from the group consisting of a halogen atom, an alkyl group, a haloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkylthio group, an arylthio group and an amino group which may be substituted or a group shown by the general formula [2]: and a polymerization initiator or an acid generator, comprising said onium salt.

    摘要翻译： 本发明涉及分子中具有碘鎓盐和锍盐的杂化型鎓盐，可用于例如阳离子型光聚合引发剂和用于化学放大抗蚀剂的酸产生剂，并提供所示的杂化型鎓盐 通式[1]表示：R 4是烷基，烯基，芳基或芳烷基，其可以具有选自卤原子， 可以被取代的烷基，卤代烷基，芳基，烷氧基，芳氧基，烷硫基，芳硫基和氨基，或由通式[2]表示的基团： 引发剂或酸产生剂，其包含所述鎓盐。

    Heterocycle-bearing onium salts
    3.
    发明申请
    Heterocycle-bearing onium salts 有权

    公开(公告)号：US20050233253A1

    公开(公告)日：2005-10-20

    申请号：US10506485

    申请日：2002-10-11

    申请人： Masami Ishihara ,  Yoji Urano ,  Masahiro Takahashi

    发明人： Masami Ishihara ,  Yoji Urano ,  Masahiro Takahashi

    IPC分类号： C07D311/16 ,  C07D311/82 ,  C07D311/86 ,  C07D335/06 ,  C08G59/68 ,  C08G65/10 ,  G03C5/00 ,  G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039

    CPC分类号： C07D311/16 ,  C07D311/86 ,  C08G59/68 ,  C08G65/105 ,  C08G2650/16 ,  G03F7/0045 ,  G03F7/029 ,  G03F7/0382 ,  G03F7/0392

    摘要： The present invention relates to a heterocycle-containing onium salt useful as, for example, a cationic photopolymerization initiator and an acid generator for a chemically amplified resist, and provides “a heterocycle-containing onium salt shown by the general formula [1]: [wherein R is a group shown by the general formula [2]: (wherein R3 and R4 are each independently a halogen atom, an alkyl group which may have a halogen atom or an aryl group as a substituent, or an aryl group which may have a halogen atom or a lower alkyl group as a substituent; X2 is an oxygen atom or a sulfur atom; i is an integer of 0 to 4; and j is an integer of 0 to 3), or a group shown by the general formula [3]: (wherein R5 and R6 are each independently a halogen atom, an alkyl group which may have a halogen atom or an aryl group as a substituent, or an aryl group which may have a halogen atom or a lower alkyl group as a substituent; X3 and X4 are each independently an oxygen atom or a sulfur atom; p is an integer of 0 to 2; and q is an integer of 0 to 3); R1 and R2 are each independently a halogen atom, an alkyl group which may have a halogen atom or an aryl group as a substituent, or an aryl group which may have a halogen atom or a lower alkyl group as a substituent; m and n are each independently an integer of 0 to 5; and A is a halogen atom or an anion derived from an inorganic strong acid, an organic acid or a compound shown by the general formula [4]: HM1(R7)4  [4] (wherein M1 is a boron atom or a gallium atom; and R7 is an aryl group which may have a substituent selected from a lower haloalkyl group, a halogen atom, a nitro group and a cyano group)]” or “a heterocycle-containing onium salt shown by the general formula [35]: [wherein R26 and R27 are each independently an aryl group which may have a halogen atom or a lower alkyl group as a substituent, a group shown by the above-mentioned general formula [2], or a group shown by the above-mentioned general formula [3]; and A3 is a halogen atom or an anion derived from an inorganic strong acid, an organic acid or a compound shown by the general formula [4]; and provided that at least one of R26 and R27 is a group shown by the above-mentioned general formula [2] or [3], and when only one of R26 and R27 is a group shown by the above-mentioned general formula [2] or [3], A3 is an anion derived from an inorganic strong acid shown by the general formula [36]; HM3F6  [36] (wherein M3 is a phosphorus atom, an arsenic atom or an antimony atom), an organic acid or a compound shown by the general formula [4]]”.

    COMPOSITION FOR WATER-REPELLENT TREATMENT OF SURFACE, AND METHOD FOR WATER-REPELLENT TREATMENT OF SURFACE OF SEMICONDUCTOR SUBSTRATE USING SAME
    7.
    发明申请
    COMPOSITION FOR WATER-REPELLENT TREATMENT OF SURFACE, AND METHOD FOR WATER-REPELLENT TREATMENT OF SURFACE OF SEMICONDUCTOR SUBSTRATE USING SAME 审中-公开
    用于水表面处理的组合物，以及使用相同方法水分处理半导体基材表面的方法

    公开(公告)号：US20130171835A1

    公开(公告)日：2013-07-04

    申请号：US13821815

    申请日：2011-09-07

    申请人： Hironori Mizuta ,  Yoji Urano ,  Masahiko Kakizawa

    发明人： Hironori Mizuta ,  Yoji Urano ,  Masahiko Kakizawa

    IPC分类号： C09D5/00 ,  H01L21/02

    CPC分类号： C09D5/00 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/022 ,  H01L21/3105 ,  H01L21/321

    摘要： The purpose of the present invention to provide: a composition which can be used for water-repellent treating of the entire surface of a semiconductor substrate having a pattern formed by laminating a Si-containing insulating layer and a metal layer, at one time; and a method for water-repellent treatment of the semiconductor substrate surface using the composition.The present invention relates to: (1) a composition for water-repellent treatment of a semiconductor substrate surface comprising a) at least one kind of a compound selected from the group consisting of a long-chain alkyl tertiary amine and a long-chain alkyl ammonium salt, b) a base or an acid generating agent, having a condensed ring structure or forming a condensed ring structure by generating a base or an acid and c) a polar organic solvent, and (2) a method for water-repellent treatment of the semiconductor substrate surface having the pattern formed by laminating the Si-containing insulating layer and the metal layer, using the composition.

    摘要翻译： 本发明的目的是提供一种组合物，其可以一次用于通过层压含Si绝缘层和金属层而形成的图案的半导体衬底的整个表面的防水处理; 以及使用该组合物对半导体衬底表面进行防水处理的方法。 本发明涉及：（1）一种半导体衬底表面的疏水处理用组合物，其特征在于：a）至少一种选自长链烷基叔胺和长链烷基 铵盐，b）具有稠环结构或通过产生碱或酸形成稠环结构的碱或酸发生剂，和c）极性有机溶剂，和（2）防水处理方法 的半导体衬底表面具有通过使用该组合物层压含Si绝缘层和金属层形成的图案。

    Method for preparation of a quaternary ammonium salt
    8.
    发明授权
    Method for preparation of a quaternary ammonium salt 有权
    季铵盐的制备方法

    公开(公告)号：US06414159B2

    公开(公告)日：2002-07-02

    申请号：US09779743

    申请日：2001-02-09

    申请人： Kimihiko Sano ,  Yoji Urano ,  Takuhiro Kimura ,  Atsunori Sano

    发明人： Kimihiko Sano ,  Yoji Urano ,  Takuhiro Kimura ,  Atsunori Sano

    IPC分类号： C07D21320

    CPC分类号： C07D213/20 ,  C07D231/12 ,  C07D233/56 ,  C07D249/08

    摘要： The present invention provides a method for preparation of a quaternary ammonium salt comprising reacting an alkyl halide with 2 equimolar amount or more per the alkyl halide of a pyridine compound or an N-lower alkyl imidazole at 120° C. to 350° C., and a method for the continuous production of a quatemary ammonium salt comprises introducing continuously an alkyl halide and 2 equimolar amount or more per the alkyl halide of a pyridine compound or an N-lower alkyl imidazole into a pipe reactor from the one end thereof under heating at 120 to 350° C. to pass through the pipe reactor wherein a reaction is allowed to take place, and taking out continuously the resulting quaternary ammonium salt from the other end of the reactor.

    摘要翻译： 本发明提供了一种制备季铵盐的方法，包括使卤代烷与卤代吡啶化合物或N-低级烷基咪唑的烷基卤化物在120℃至350℃下反应2摩尔以上， 和连续生产季铵盐的方法包括在加热下从其一端连续引入吡啶化合物或N-低级烷基咪唑的烷基卤化物的烷基卤和2当量等于或更多的烷基卤化物进入管式反应器 在120至350℃下通过允许发生反应的管式反应器，并从反应器的另一端连续取出所得的季铵盐。

    Method of producing sintered body of material for thermoelectric element
    9.
    发明授权
    Method of producing sintered body of material for thermoelectric element 失效
    生产热电元件材料烧结体的方法

    公开(公告)号：US06278050B1

    公开(公告)日：2001-08-21

    申请号：US09602017

    申请日：2000-06-23

    申请人： Yoji Urano ,  Kazuo Kamada ,  Hirokazu Yoshioka ,  Kentaro Kobayashi

    发明人： Yoji Urano ,  Kazuo Kamada ,  Hirokazu Yoshioka ,  Kentaro Kobayashi

    IPC分类号： H01L3534

    CPC分类号： H01L35/34 ,  B22F2998/10 ,  B22F3/1208 ,  B22F3/16

    摘要： A sintered body of a material for thermoelectric element having excellent thermoelectric performance and mechanical strength can be produced by the following method. A block of the material for thermoelectric element is provided. The block has an electric-current passing direction, in which electricity is supplied to obtain a desired thermoelectric performance of the thermoelectric element. The block is encased in an elongate capsule such that the electric-current passing direction of the block is substantially agreement with an axial direction of the capsule. After degassing the capsule, a forming operation for reducing a cross section perpendicular to the axial direction of the capsule is performed to obtain a formed capsule having a green compact of the block crushed by the forming operation therein. A heat treatment is then performed to sinter the green compact in the formed capsule. Finally, the resultant sintered body is removed from the formed capsule. This method is preferably used to manufacture a thermoelectric module that is a temperature control device using the Peltier effect.

    摘要翻译： 通过以下方法可以制造出具有优异的热电性能和机械强度的用于热电元件的材料的烧结体。 提供了一种用于热电元件的材料块。 该块具有电流通过方向，其中供电以获得热电元件的期望的热电性能。 块被封装在细长的胶囊中，使得块的电流通过方向基本上与胶囊的轴向方向一致。 在对胶囊进行脱气之后，进行用于减小与胶囊的轴向垂直的横截面的成形操作，以获得具有通过其中的成形操作压碎的块的生坯的成形胶囊。 然后进行热处理以烧结形成的胶囊中的生坯。 最后，从形成的胶囊中除去所得的烧结体。 该方法优选用于制造使用珀尔帖效应的温度控制装置的热电模块。

    Thermoelectric module with improved heat-transfer efficiency and method of manufacturing the same
    10.
    发明授权
    Thermoelectric module with improved heat-transfer efficiency and method of manufacturing the same 有权
    具有改善传热效率的热电模块及其制造方法

    公开(公告)号：US06274803B1

    公开(公告)日：2001-08-14

    申请号：US09574069

    申请日：2000-05-18

    申请人： Hirokazu Yoshioka ,  Kazuo Kamada ,  Yoji Urano ,  Kentaro Kobayashi

    发明人： Hirokazu Yoshioka ,  Kazuo Kamada ,  Yoji Urano ,  Kentaro Kobayashi

    IPC分类号： H01L3500

    CPC分类号： H01L35/32 ,  H01L35/34

    摘要： A thermoelectric chip with exposed surfaces of N-type and P-type semiconductor elements on its top and bottom surfaces is prepared by arranging the semiconductor elements in a matrix manner such that each of the N-type semiconductor elements is disposed adjacent to the P-type semiconductor element through a space, and filling the space with a first resin material having electrical insulation. A metal layer is formed on each of the exposed surfaces of the semiconductor elements. Then, first electrodes are formed on the top surface according to a first circuit pattern. Similarly, second electrodes are formed on the bottom surface according to a second circuit pattern different from the first circuit pattern. An electrical insulation sheet of a second resin material containing a ceramic powder with high thermal conductivity is bonded to the top and bottom surfaces to obtain the thermoelectric module.

    摘要翻译： 通过将半导体元件以矩阵的方式布置，使得每个N型半导体元件邻近P型半导体元件设置在其顶表面和底表面上具有N型和P型半导体元件的暴露表面的热电芯片， 型半导体元件，并且用具有电绝缘性的第一树脂材料填充该空间。 在半导体元件的每个暴露表面上形成金属层。 然后，根据第一电路图案在顶表面上形成第一电极。 类似地，根据与第一电路图案不同的第二电路图案，在底表面上形成第二电极。 含有导热性高的陶瓷粉末的第二树脂材料的电绝缘片与顶表面接合，得到热电模块。