公开(公告)号：US08436012B2

公开(公告)日：2013-05-07

申请号：US12954408

申请日：2010-11-24

申请人： Masami Ohtsuka ,  Noriyasu Haginoya ,  Masanori Ichikawa ,  Hironori Matsunaga ,  Hironao Saito ,  Yoshihiro Shibata ,  Tomoyuki Tsunemi

发明人： Masami Ohtsuka ,  Noriyasu Haginoya ,  Masanori Ichikawa ,  Hironori Matsunaga ,  Hironao Saito ,  Yoshihiro Shibata ,  Tomoyuki Tsunemi

IPC分类号： A61K31/5377 ,  A61K31/437 ,  A61K31/496 ,  A61K31/519 ,  A61K31/4985 ,  A61K31/5025 ,  A61P35/00

CPC分类号： C07D487/04 ,  A61K31/437 ,  A61K31/4709 ,  A61K31/4725 ,  C07D471/04

摘要： A compound represented by formula (I) having mTOR inhibitory activity or a pharmacologically acceptable salt thereof.

摘要翻译： 由具有mTOR抑制活性的式（I）表示的化合物或其药理学上可接受的盐。

公开(公告)号：US20110082138A1

公开(公告)日：2011-04-07

申请号：US12954408

申请日：2010-11-24

申请人： Masami Ohtsuka ,  Noriyasu Haginoya ,  Masanori Ichikawa ,  Hironori Matsunaga ,  Hironao Saito ,  Yoshihiro Shibata ,  Tomoyuki Tsunemi

发明人： Masami Ohtsuka ,  Noriyasu Haginoya ,  Masanori Ichikawa ,  Hironori Matsunaga ,  Hironao Saito ,  Yoshihiro Shibata ,  Tomoyuki Tsunemi

IPC分类号： A61K31/5377 ,  C07D471/04 ,  A61K31/437 ,  A61P35/00 ,  A61K31/496 ,  A61K31/519 ,  A61K31/4985 ,  A61K31/5025

CPC分类号： C07D487/04 ,  A61K31/437 ,  A61K31/4709 ,  A61K31/4725 ,  C07D471/04

摘要： A compound represented by formula (I) having mTOR inhibitory activity or a pharmacologically acceptable salt thereof.

摘要翻译： 由具有mTOR抑制活性的式（I）表示的化合物或其药理学上可接受的盐。

公开(公告)号：US06307225B1

公开(公告)日：2001-10-23

申请号：US09596574

申请日：2000-06-16

申请人： Takeshi Kijima ,  Hironori Matsunaga

发明人： Takeshi Kijima ,  Hironori Matsunaga

IPC分类号： H01L2176

CPC分类号： H01L21/28194 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78391 ,  Y10S148/081 ,  Y10S148/118

摘要： A bismuth silicate film (insulating film) 3 of Bi2SiO5 oriented predominantly in the direction of (100) is formed on a Si substrate 2 and a ferroelectric thin film 4 is formed on the bismuth silicate film 3 to create an MFIS structure having a c-axis-oriented ferroelectric thin film 4 formed with good reproducibility. A highly reliable thin film device is produced by applying the MFIS structure to a FET.

摘要翻译： 主要在（100）方向取向的Bi2SiO5的铋硅酸盐膜（绝缘膜）3形成在Si衬底2上，并且在硅酸铋膜3上形成铁电薄膜4，以产生具有c- 轴向取向的铁电薄膜4形成有良好的再现性。 通过将MFIS结构应用于FET来制造高度可靠的薄膜器件。

公开(公告)号：US5821005A

公开(公告)日：1998-10-13

申请号：US612584

申请日：1996-03-08

申请人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： C01G29/00 ,  C23C16/02 ,  C23C16/40 ,  H01B3/00 ,  H01B3/12 ,  H01B17/60 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L49/02 ,  B32B9/00

CPC分类号： C23C16/40 ,  C23C16/0272

摘要： A ferroelectrics thin-film coated substrate is manufactured in a low-temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization. A ferroelectrics thin-film coated substrate has a structure with a buffer layer, a growth layer allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3 (A is selected from Na.sup.1+, K.sup.1+, Pb.sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+, Bi.sup.3+ and the like, B is selected from Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo.sup.6+, and m is an integer not less than 1) formed in succession.

摘要翻译： 通过使用具有致密且均匀的表面并表现出大的残余自发极化的铁电体，在低温工艺中制造铁电薄膜涂覆基板。 铁电薄膜被覆基板具有缓冲层，允许铁电体薄膜生长的生长层的结构，以及由化学式Bi2 Am表示的具有层状结晶结构的铁电体的铁电体薄膜 -1 Bm O3m + 3（A选自Na1 +，K1 +，Pb2 +，Ca2 +，Sr2 +，Ba2 +，Bi3 +等，B选自Fe3 +，Ti4 +，Nb5 +，Ta5 +，W6 +和Mo6 +，m为整数 小于1）。

公开(公告)号：US5757061A

公开(公告)日：1998-05-26

申请号：US643302

申请日：1996-05-08

申请人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： C01G29/00 ,  C30B29/32 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792 ,  H01L37/02 ,  H01L49/02 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。

公开(公告)号：US06232167B1

公开(公告)日：2001-05-15

申请号：US08968938

申请日：1997-11-12

申请人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Sakiko Satoh ,  Takeshi Kijima ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： H01L218242

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。

公开(公告)号：US06197600B1

公开(公告)日：2001-03-06

申请号：US09072359

申请日：1998-05-05

申请人： Takeshi Kijima ,  Maho Ushikubo ,  Hironori Matsunaga

发明人： Takeshi Kijima ,  Maho Ushikubo ,  Hironori Matsunaga

IPC分类号： H01L2100

CPC分类号： H01L28/56 ,  C23C16/40 ,  C23C16/407

摘要： A ferroelectric thin film includes: a bismuth oxide polycrystal thin film constituting a buffer layer, and a bismuth-based layered compound thin film represented by the formula: Bi2Am-1BmO3m+3 wherein A is an atom selected from the group consisting of Na, K, Pb, Ca, Sr, Ba and Bi; B is an atom selected from the group consisting of Fe, Ti, Nb, Ta, W and Mo; and m is an integer of 1 or more. The bismuth oxide polycrystal thin film and the bismuth-based layered compound thin film are formed into a single-phase.

摘要翻译： 铁电薄膜包括：构成缓冲层的氧化铋多晶薄膜和由式Bi2Am-1BmO3m + 3表示的铋基层状化合物薄膜，其中A是选自Na，K ，Pb，Ca，Sr，Ba和Bi; B是选自Fe，Ti，Nb，Ta，W和Mo的原子; m为1以上的整数。 氧化铋多晶薄膜和铋系层状化合物薄膜形成为单相。

公开(公告)号：US5851841A

公开(公告)日：1998-12-22

申请号：US713651

申请日：1996-09-13

申请人： Maho Ushikubo ,  Yasuyuki Ito ,  Seiichi Yokoyama ,  Hironori Matsunaga ,  Masayoshi Koba

发明人： Maho Ushikubo ,  Yasuyuki Ito ,  Seiichi Yokoyama ,  Hironori Matsunaga ,  Masayoshi Koba

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01L37/02 ,  H01L41/09 ,  H01L41/187 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/40 ,  H01L21/31691 ,  H01L28/55

摘要： A method for producing a ferroelectric element having a lower electrode layer, a ferroelectric film and an upper electrode layer provided in sequence on the substrate is disclosed. The method comprising the step of applying a metal-contained precursor solution to the surface of the lower electrode layer formed on the substrate, the step of drying the applied precursor solution to remove the solution alone by heating it, a first heat treatment step for heating the dried precursor to form a ferroelectric film, and a second heat treatment step for heating the formed film element in a gas-pressurized atmosphere of lower than 1 atmosphere after forming an upper electrode layer on the ferroelectric film.

摘要翻译： 公开了一种在基板上依次设置具有下电极层，铁电体膜和上电极层的铁电体元件的制造方法。 该方法包括以下步骤：将金属含有的前体溶液施加到形成在基板上的下电极层的表面，干燥所施加的前体溶液以通过加热单独除去溶液的步骤，加热第一热处理步骤 所述干燥前体形成铁电体膜;以及第二热处理步骤，用于在所述强电介质膜上形成上电极层之后，在低于1大气压的气体加压气氛中加热所述成膜元件。

公开(公告)号：US5811181A

公开(公告)日：1998-09-22

申请号：US449701

申请日：1995-05-24

申请人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba ,  Noboru Ohtani

发明人： Takeshi Kijima ,  Sakiko Satoh ,  Hironori Matsunaga ,  Masayoshi Koba ,  Noboru Ohtani

IPC分类号： C01G49/00 ,  C01G29/00 ,  C23C16/40 ,  C23C16/56 ,  H01B3/02 ,  H01B3/10 ,  H01B3/12 ,  H01B17/60 ,  H01B19/00 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L41/39 ,  H01L49/02 ,  B32B17/00

CPC分类号： C23C16/40 ,  C23C16/56 ,  Y10T428/252 ,  Y10T428/256

摘要： A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi.sub.4 Ti.sub.3 O.sub.12 thin film manufactured on the titanium oxide buffer layer can be improved.

摘要翻译： 在低温下制造具有光滑表面和优异的铁电特性的紧密的a轴取向膜，并且以铁电Bi4Ti3O12的优点的再现性可以用于开发各种诸如铁电非易失性存储器，热电传感器等的器件。 通过氧化钛缓冲层在基板上形成铁电Bi4Ti3O12薄膜，可以提高在氧化钛缓冲层上制造的Bi 4 Ti 3 O 12薄膜的接近度和表面平滑性。

公开(公告)号：US06440591B1

公开(公告)日：2002-08-27

申请号：US08646630

申请日：1996-05-08

申请人： Hironori Matsunaga ,  Takeshi Kijima ,  Sakiko Satoh ,  Masayoshi Koba

发明人： Hironori Matsunaga ,  Takeshi Kijima ,  Sakiko Satoh ,  Masayoshi Koba

IPC分类号： B32B900

CPC分类号： H01L28/56

摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a metal oxide buffer layer on a substrate, forming a first crystalline ferroelectric thin film thereon by means of a MOCVD method and forming a second ferroelectric thin film with a film thickness thicker than that of the first ferroelectric thin film thereon by means of the MOCVD method at a temperature lower than that of the first ferroelectric thin film. This producing method makes it possible to produce a ferroelectric thin film, where its surface is dense and even, a leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

摘要翻译： 通过在基板上形成金属氧化物缓冲层的制造方法，通过MOCVD法在其上形成第一结晶性强电介质薄膜，并形成膜厚度比第二强铁电体薄膜的铁电薄膜被覆基板 在其上的第一铁电薄膜的温度低于第一铁电薄膜的温度，通过MOCVD方法。 该制造方法使得可以在较低的温度下制备其表面致密甚至漏电流性能优异并且显示足够大的剩余自发极化的铁电薄膜。