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    Semiconductor substrates of high reliability ceramic metal composites
    3.
    发明授权
    Semiconductor substrates of high reliability ceramic metal composites 失效
    高可靠性陶瓷金属复合材料的半导体衬底

    公开(公告)号：US6054762A

    公开(公告)日：2000-04-25

    申请号：US917327

    申请日：1997-08-25

    申请人： Masami Sakuraba ,  Masami Kimura ,  Junji Nakamura ,  Masaya Takahara

    发明人： Masami Sakuraba ,  Masami Kimura ,  Junji Nakamura ,  Masaya Takahara

    IPC分类号： C04B37/02 ,  H01L23/12 ,  H01L23/13 ,  H01L23/15 ,  H01L23/373 ,  H05K1/02 ,  H05K1/03 ,  H05K3/38 ,  H01L23/06 ,  H01L23/10 ,  H01L23/34

    CPC分类号： H01L23/3735 ,  C04B37/026 ,  H01L23/13 ,  H01L23/15 ,  H05K1/0271 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/407 ,  C04B2237/70 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/0355 ,  H05K2201/09145 ,  H05K2201/098 ,  H05K2201/09845 ,  H05K3/38

    摘要： A paste of active metallic brazing material is applied to the entire surface of each side of aluminum nitride or alumina ceramic substrate 1; circuit forming copper plate 3 having a thickness of 0.3 mm is placed in contact with one surface of the substrate and a heat dissipating copper plate 4 having a thickness of 0.25 mm placed in contact with the other surface; the individual members are compressed together and heated at 850.degree. C. in a vacuum furnace to form a joint; an etching resist is applied to the circuit forming copper plate and etching is performed with an iron chloride solution to form a circuit pattern and the unwanted brazing material is removed from the marginal portions; a second resist layer is applied and etched with an iron chloride solution to form a second marginal step; a third resist layer is similarly applied and etched to form a third marginal step; the completed circuit board having three marginal steps of which the lowest one is solely or partly made of the brazing material can withstand 1,500 heat cycles, which is the result that has ben unattainable by the prior art. Having such high heat cycle characteristics, the circuit board is suitable for use as semiconductor substrate in automobiles, electric trains and other applications that require high output power.

    摘要翻译： 在氮化铝或氧化铝陶瓷基板1的各侧的整个表面上涂敷活性金属钎料的糊状物， 将厚度为0.3mm的电路形成铜板3放置成与基板的一个表面接触，并且将厚度为0.25mm的散热铜板4放置成与另一个表面接触; 将各个构件压缩在一起，并在真空炉中在850℃下加热以形成接头; 将抗蚀剂施加到形成铜电路的电路上，用氯化铁溶液进行蚀刻以形成电路图案，并且从边缘部分去除不想要的钎焊材料; 施加第二抗蚀剂层并用氯化铁溶液蚀刻以形成第二边缘步骤; 类似地施加和蚀刻第三抗蚀剂层以形成第三边缘步骤; 完成的电路板具有三个边缘台阶，其中最低的一个仅由或部分由钎焊材料制成，可承受1500次热循环，这是现有技术无法实现的结果。 具有这样高的热循环特性，电路板适用于需要高输出功率的汽车，电动列车和其他应用中的半导体衬底。

    Power module circuit board and a process for the manufacture thereof
    4.
    发明授权
    Power module circuit board and a process for the manufacture thereof 失效
    电源模块电路板及其制造方法

    公开(公告)号：US6013357A

    公开(公告)日：2000-01-11

    申请号：US917328

    申请日：1997-08-25

    申请人： Masami Sakuraba ,  Masami Kimura ,  Junji Nakamura ,  Masaya Takahara

    发明人： Masami Sakuraba ,  Masami Kimura ,  Junji Nakamura ,  Masaya Takahara

    IPC分类号： C04B37/02 ,  C04B41/88 ,  H01L23/15 ,  H05K1/03 ,  H05K3/38 ,  B32B3/00

    CPC分类号： H05K3/38 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/13055 ,  Y10S428/91 ,  Y10T428/24917 ,  Y10T428/24926

    摘要： A conductor pattern is formed on at least one surface of an AlN- or Si.sub.3 N.sub.4 -based ceramic substrate which is such that the ratio between the principal metal component binding with N to form the ceramic mass and the B in the BN remaining on the surface layer is no more than 50.times.10.sup.-6 as either B/Al or B/Si, wherein B/Al represents the ratio of I.sub.B to I.sub.Al where I.sub.B is the X-ray diffraction intensity of boron present on the surface layer and I.sub.Al is the X-ray diffraction intensity of aluminum, and B/Si represents the ratio of I.sub.B to I.sub.Si where I.sub.B is as defined above and I.sub.Si is the X-ray diffraction intensity of silicon. The thus produced circuit board has both a peel strength of at least 30 kg/mm.sup.2 and a capability of withstanding at least 30 heat cycles and, hence, satisfies the performance requirements of the recent models of power module ceramic circuit boards.

    摘要翻译： 在AlN或Si3N4基陶瓷基板的至少一个表面上形成导体图案，使得与N结合的主要金属成分与陶瓷块之间的比例和残留在表面层上的BN中的B B / Al或B / Si不超过50×10 -6，其中B / Al表示IB与IA1的比例，其中IB是表面层上存在的硼的X射线衍射强度，IA 1是X- 铝的射线衍射强度，B / Si表示IB与ISi的比例，其中IB如上所定义，ISi是硅的X射线衍射强度。 由此制造的电路板具有至少30kg / mm 2的剥离强度和耐受至少30次热循环的能力，因此满足最近型号的功率模块陶瓷电路板的性能要求。

    Metal-ceramic composite substrate
    7.
    发明授权
    Metal-ceramic composite substrate 失效
    金属陶瓷复合基板

    公开(公告)号：US6071592A

    公开(公告)日：2000-06-06

    申请号：US898880

    申请日：1997-07-23

    申请人： Masami Sakuraba ,  Masami Kimura ,  Junji Nakamura ,  Masaya Takahara

    发明人： Masami Sakuraba ,  Masami Kimura ,  Junji Nakamura ,  Masaya Takahara

    IPC分类号： C04B37/02 ,  H01L23/14 ,  H01L23/373 ,  H05K1/03 ,  H05K3/38 ,  D06N7/04

    CPC分类号： H05K3/38 ,  H01L23/142 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24355 ,  Y10T428/24628

    摘要： A metal-ceramic composite circuit substrate having a ceramic substrate and a metal plate joined to at least one main surface of the ceramic substrate, the rate of voids formed on at least a joint surface at a semiconductor mounting portion of the metal plate per unit surface area being not more than 1.49%. The diameter of void formed on at least the joint surface at a semiconductor mounting portion of the metal plate is not larger than 0.7 mm. The surface undulation of the ceramic substrate is not more than 15 .mu.m/20 mm measured by a surface roughness tester in case that the ceramic substrate is joined directly to the metal plate. The metal plate is joined to the ceramic substrate through a brazing material containing at least one active metal selected from a group consisting of Ti, Zr, Hf and Nb. The ceramic substrate is at least one kind of ceramic substrate selected from a group consisting of Al.sub.2 O.sub.3, AlN, BeO, SiC, Si.sub.3 N.sub.4 and ZrO.sub.2.

    摘要翻译： 一种金属陶瓷复合电路基板，其具有与陶瓷基板的至少一个主面接合的陶瓷基板和金属板，在每单位表面的金属板的半导体安装部的至少接合面上形成的空隙率 面积不超过1.49％。 在金属板的半导体安装部的至少接合面上形成的空隙的直径不大于0.7mm。 在将陶瓷基板直接接合到金属板的情况下，通过表面粗糙度测量仪测量陶瓷基板的表面起伏不超过15μm/ 20mm。 金属板通过含有选自Ti，Zr，Hf和Nb中的至少一种活性金属的钎焊材料与陶瓷基板接合。 陶瓷基板是选自Al 2 O 3，AlN，BeO，SiC，Si 3 N 4和ZrO 2中的至少一种陶瓷基板。