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    Semiconductor integrated circuit with input/output interface adapted for small-amplitude operation
    1.
    发明授权
    Semiconductor integrated circuit with input/output interface adapted for small-amplitude operation 失效
    具有适用于小振幅操作的输入/输出接口的半导体集成电路

    公开(公告)号：US06744300B2

    公开(公告)日：2004-06-01

    申请号：US10277707

    申请日：2002-10-23

    申请人： Masao Taguchi ,  Satoshi Eto ,  Yoshihiro Takemae ,  Hiroshi Yoshioka ,  Makoto Koga

    发明人： Masao Taguchi ,  Satoshi Eto ,  Yoshihiro Takemae ,  Hiroshi Yoshioka ,  Makoto Koga

    IPC分类号： H01J1982

    CPC分类号： H03K19/018585

    摘要： A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

    摘要翻译： 半导体集成电路包括用于控制向接收输入信号的信号放大电路提供电源电压的开关单元，以及用于根据所述开关单元的幅度或频率选择性地接通和断开开关单元的控制单元 输入信号。 通过该结构，可以提供能够应用于适于小振幅操作的输入/输出接口的输入电路或输出电路。

    Semiconductor integrated circuit with input/output interface adapted for small-amplitude operation
    2.
    发明授权
    Semiconductor integrated circuit with input/output interface adapted for small-amplitude operation 失效
    具有适用于小振幅操作的输入/输出接口的半导体集成电路

    公开(公告)号：US06492846B1

    公开(公告)日：2002-12-10

    申请号：US09474702

    申请日：1999-12-29

    申请人： Masao Taguchi ,  Satoshi Eto ,  Yoshihiro Takemae ,  Hiroshi Yoshioka ,  Makoto Koga

    发明人： Masao Taguchi ,  Satoshi Eto ,  Yoshihiro Takemae ,  Hiroshi Yoshioka ,  Makoto Koga

    IPC分类号： H03K300

    CPC分类号： H03K19/018585

    摘要： A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By this constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

    摘要翻译： 半导体集成电路包括用于控制向接收输入信号的信号放大电路提供电源电压的开关单元，以及用于根据所述开关单元的幅度或频率选择性地接通和断开开关单元的控制单元 输入信号。 通过这种结构，可以提供能够应用于适于小振幅操作的输入/输出接口的输入电路或输出电路。

    Semiconductor integrated circuit with input/output interface adapted for small-amplitude operation
    3.
    发明授权
    Semiconductor integrated circuit with input/output interface adapted for small-amplitude operation 失效
    具有适用于小振幅操作的输入/输出接口的半导体集成电路

    公开(公告)号：US5557221A

    公开(公告)日：1996-09-17

    申请号：US76434

    申请日：1993-06-14

    申请人： Masao Taguchi ,  Satoshi Eto ,  Yoshihiro Takemae ,  Hiroshi Yoshioka ,  Makoto Koga

    发明人： Masao Taguchi ,  Satoshi Eto ,  Yoshihiro Takemae ,  Hiroshi Yoshioka ,  Makoto Koga

    IPC分类号： H03K19/0185 ,  H03F3/45

    CPC分类号： H03K19/018585

    摘要： A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of this input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

    摘要翻译： 半导体集成电路包括用于控制向接收输入信号的信号放大电路提供电源电压的开关单元，以及根据该开关单元的幅度或频率选择性地接通和断开开关单元的控制单元 输入信号。 通过该结构，可以提供能够应用于适于小振幅操作的输入/输出接口的输入电路或输出电路。

    Crystalline semiconductor film manufacturing method and crystalline semiconductor film manufacturing apparatus
    7.
    发明授权
    Crystalline semiconductor film manufacturing method and crystalline semiconductor film manufacturing apparatus 有权
    晶体半导体膜制造方法和结晶半导体膜制造装置

    公开(公告)号：US08716113B2

    公开(公告)日：2014-05-06

    申请号：US13295317

    申请日：2011-11-14

    申请人： Toru Saito ,  Hiroshi Yoshioka ,  Sadayoshi Hotta

    发明人： Toru Saito ,  Hiroshi Yoshioka ,  Sadayoshi Hotta

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02

    CPC分类号： H01L21/02675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

    摘要： A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.

    摘要翻译： 半导体膜制造方法包括：在基板上形成金属层; 通过图案化金属层在每个像素中形成栅电极; 在栅电极上形成栅绝缘体; 在栅极绝缘膜上形成非晶半导体膜; 并且通过用激光束照射非晶半导体膜来结晶非晶半导体膜，并且激光束的激光照射宽度对应于每个像素的宽度的n倍（n为2以上的整数），激光能量强度 在激光照射宽度的一个端部比在另一端部高，并且在结晶中，激光束的激光能量强度以n个像素为增量反转，交替地在激光照射的一个端部之间 激光束的宽度和另一端部。

    ELECTRONIC COMPONENT PACKAGE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PACKAGE MANUFACTURING METHOD
    8.
    发明申请
    ELECTRONIC COMPONENT PACKAGE, ELECTRONIC COMPONENT, AND ELECTRONIC COMPONENT PACKAGE MANUFACTURING METHOD 有权
    电子元件封装，电子元件和电子元件封装制造方法

    公开(公告)号：US20140083735A1

    公开(公告)日：2014-03-27

    申请号：US13635024

    申请日：2012-03-16

    申请人： Naoki Kohda ,  Hiroshi Yoshioka

    发明人： Naoki Kohda ,  Hiroshi Yoshioka

    IPC分类号： H05K5/06 ,  H05K13/00

    CPC分类号： H05K5/066 ,  H01L23/055 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/16315 ,  H03H9/1021 ,  H03H9/21 ,  H05K13/00 ,  H01L2924/00

    摘要： An electronic component package has a first sealing member main surface with mounted electronic element, and a second sealing member. An outer circumference portion of a second sealing member is molded into a tapered shape, providing a tapered area in at least part of the outer circumference. A flat area adjacent to the tapered area is provided in at least part of a flat portion inward of the outer circumference portion of the surface of the second sealing member. A first area corresponding to the tapered area and a second area corresponding to the flat area are provided adjacent to each other on a first main surface of the first sealing member with mounted electronic component element. A width W2 of the second area is 0.66 to 1.2 times a width W4 of the flat area. First and second bonding layers are formed and bonded with each other by heating.

    摘要翻译： 电子部件封装具有安装有电子元件的第一密封构件主表面和第二密封构件。 第二密封构件的外周部分模制成锥形，在外周的至少一部分中提供锥形区域。 与第二密封构件的表面的外周部的内侧的平坦部的至少一部分设置有与锥形区域相邻的平坦区域。 相对于锥形区域的第一区域和对应于平坦区域的第二区域在具有安装的电子元件的第一密封构件的第一主表面上彼此相邻地设置。 第二区域的宽度W2为平坦区域的宽度W4的0.66〜1.2倍。 通过加热形成第一和第二接合层并彼此接合。