摘要:
A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor adjacently formed to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.
摘要:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a substrate; a columnar semiconductor disposed perpendicular to the substrate; a charge storage laminated film disposed around the columnar semiconductor; a first conductor layer that is in contact with the charge storage laminated film and that has a first end portion having a first end face; a second conductor layer that is in contact with the charge storage laminated film, that is separated from the first conductor layer and that has a second end portion having a second end face; a first contact plug disposed on the first end face; and a second contact plug disposed on the second end face.
摘要:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a substrate; a columnar semiconductor disposed perpendicular to the substrate; a charge storage laminated film disposed around the columnar semiconductor; a first conductor layer that is in contact with the charge storage laminated film and that has a first end portion having a first end face; a second conductor layer that is in contact with the charge storage laminated film, that is separated from the first conductor layer and that has a second end portion having a second end face; a first contact plug disposed on the first end face; and a second contact plug disposed on the second end face.
摘要:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a substrate; a columnar semiconductor disposed perpendicular to the substrate; a charge storage laminated film disposed around the columnar semiconductor; a first conductor layer that is in contact with the charge storage laminated film and that has a first end portion having a first end face; a second conductor layer that is in contact with the charge storage laminated film, that is separated from the first conductor layer and that has a second end portion having a second end face; a first contact plug disposed on the first end face; and a second contact plug disposed on the second end face.
摘要:
A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor formed so as to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.
摘要:
The present invention provides an electrostatic discharge protector capable of protecting electronic circuit boards having various designs from electrostatic discharge freely, simply and easily. The electrostatic discharge protector of the present invention comprises at least three conductive members containing one pair of electrodes and the conductive members other than the electrodes, the conductive members are each disposed in such a way that the gap between one conductive member and the other conductive member has a width of 0.1 to 10 μm, an insulating member is disposed and embedded in at least one of gaps having a width of 0.1 to 10 μm which are adjacent to each conductive member and one electrode is connected to the other electrode paired with the one electrode through the insulating member and the conductive members other than electrodes.
摘要:
A suspension system for a vehicle, including: an electromagnetic actuator configured to generate an actuator force and including a sprung-side unit supported by a sprung portion, an unsprung-side unit supported by an unsprung portion, a screw mechanism, and an electromagnetic motor; a connecting mechanism including a support spring for permitting one of the sprung-side and unsprung-side units to be floatingly supported as a floating unit by a unit-floatingly support portion that is one of the sprung and unsprung portions by which the floating unit is supported; and a controller including a sprung-vibration-damping control portion and a relative-vibration-damping control portion that is configured to execute a relative-vibration damping control for damping a vibration of the floating unit caused by the structure in which the floating unit is floatingly supported by the support spring.
摘要:
A suspension system is provided to execute a control for avoiding a state in which an operation of an electric motor which is a power source of an electromagnetic actuator is kept halted at a certain operational position while the motor is generating a motor force. Where a target rotational position of the motor becomes equal to a specific operational position (e.g., a rotational position at which an electrifying current amount of one phase reaches a peak value), a control for shifting the target rotational position by δθ is executed. Where the rotational position of the motor is kept located at the certain position for a time period longer than a prescribed time, a control for changing the rotational position of the motor is executed.
摘要:
A suspension system is provided to execute a control for avoiding a state in which an operation of an electric motor which is a power source of an electromagnetic actuator is kept halted at a certain operational position while the motor is generating a motor force. Where a target rotational position of the motor becomes equal to a specific operational position (e.g., a rotational position at which an electrifying current amount of one phase reaches a peak value), a control for shifting the target rotational position by δθ is executed. Where the rotational position of the motor is kept located at the certain position for a time period longer than a prescribed time, a control for changing the rotational position of the motor is executed.
摘要:
An electromagnetic shock absorber including: (a) a wheel-side member; (b) a body-side member movable relative to the wheel-side member; and (c) a damping force generator with an electromagnetic motor including stationary and movable elements movable relative to each other. The damping force generator can generate, based on a force generated by the motor, a damping force acting against a relative movement of the wheel-side member and the body-side member. The motor has an axis extending in a both-members-relative-movement direction as a direction of the above-described relative movement. The stationary element is supported by the wheel-side member via an elastic body, to be movable relative to the wheel-side member in the both-members-relative-movement direction. The electromagnetic motor allows relative movement of the stationary element and the movable element upon movement of the stationary element relative to the wheel-side member.