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    Semiconductor photodetector element and semiconductor device
    2.
    发明授权
    Semiconductor photodetector element and semiconductor device 有权
    半导体光电探测器元件和半导体器件

    公开(公告)号：US08203846B2

    公开(公告)日：2012-06-19

    申请号：US12861606

    申请日：2010-08-23

    申请人： Kazuhiro Natsuaki

    发明人： Kazuhiro Natsuaki

    IPC分类号： H05K1/18

    CPC分类号： G01J1/44 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0264 ,  G01J3/027 ,  G01J3/0272 ,  G01J3/51 ,  G01J3/513 ,  H01L27/14621 ,  H01L27/14645

    摘要： Provided is a semiconductor photodetector element which is reduced in manufacturing cost and improved in precision. The semiconductor photodetector element includes: a first photodiode formed in a P-type silicon substrate; a second photodiode formed in the P-type silicon substrate and has the same structure as that of the first photodiode; a color filter layer formed above the first photodiode from a green filter; a color filter layer formed of a black filter above the second photodiode; and an arithmetic circuit portion which subtracts a detection signal of the second photodiode from a detection signal of the first photodiode.

    摘要翻译： 提供一种半导体光电检测元件，其制造成本降低，精度提高。 半导体光检测器元件包括：形成在P型硅衬底中的第一光电二极管; 形成在P型硅衬底中并具有与第一光电二极管相同的结构的第二光电二极管; 从绿色滤光器形成在第一光电二极管的上方的滤色器层; 由第二光电二极管上方的黑色滤光片形成的滤色器层; 以及从第一光电二极管的检测信号中减去第二光电二极管的检测信号的运算电路部分。

    SEMICONDUCTOR PHOTODETECTOR ELEMENT AND SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR PHOTODETECTOR ELEMENT AND SEMICONDUCTOR DEVICE 有权
    SEMICONDUCTOR PHOTODETECTOR元件和半导体器件

    公开(公告)号：US20110042556A1

    公开(公告)日：2011-02-24

    申请号：US12861606

    申请日：2010-08-23

    申请人： Kazuhiro NATSUAKI

    发明人： Kazuhiro NATSUAKI

    IPC分类号： G01J3/50

    CPC分类号： G01J1/44 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0264 ,  G01J3/027 ,  G01J3/0272 ,  G01J3/51 ,  G01J3/513 ,  H01L27/14621 ,  H01L27/14645

    摘要： Provided is a semiconductor photodetector element which is reduced in manufacturing cost and improved in precision. The semiconductor photodetector element includes: a first photodiode formed in a P-type silicon substrate; a second photodiode formed in the P-type silicon substrate and has the same structure as that of the first photodiode; a color filter layer formed above the first photodiode from a green filter; a color filter layer formed of a black filter above the second photodiode; and an arithmetic circuit portion which subtracts a detection signal of the second photodiode from a detection signal of the first photodiode.

    摘要翻译： 提供一种半导体光电检测元件，其制造成本降低，精度提高。 半导体光检测器元件包括：形成在P型硅衬底中的第一光电二极管; 形成在P型硅衬底中并具有与第一光电二极管相同的结构的第二光电二极管; 从绿色滤光器形成在第一光电二极管的上方的滤色器层; 由第二光电二极管上方的黑色滤光片形成的滤色器层; 以及从第一光电二极管的检测信号中减去第二光电二极管的检测信号的算术电路部分。

    Semiconductor device with reduced parasitic capacitance between impurity diffusion regions
    6.
    发明授权
    Semiconductor device with reduced parasitic capacitance between impurity diffusion regions 有权
    具有降低杂质扩散区域之间的寄生电容的半导体器件

    公开(公告)号：US06828644B2

    公开(公告)日：2004-12-07

    申请号：US10393389

    申请日：2003-03-21

    申请人： Yuji Asano ,  Morio Katou ,  Takao Setoyama ,  Toshihiko Fukushima ,  Kazuhiro Natsuaki

    发明人： Yuji Asano ,  Morio Katou ,  Takao Setoyama ,  Toshihiko Fukushima ,  Kazuhiro Natsuaki

    IPC分类号： H01L3106

    CPC分类号： H01L31/02024 ,  H01L21/761 ,  H01L21/76202 ,  H01L21/763 ,  H01L27/0203 ,  H01L27/1446

    摘要： A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.

    摘要翻译： 第一层形成在具有由第一导电类型的半导体制成的表面层的下面的衬底上。 第一层由具有高于表层的电阻的半导体制成。 第一导电类型的第一杂质扩散区形成在第一层的局部表面区域中。 第一杂质扩散区域不到达下面的衬底的表面。 第一导电类型的第二杂质扩散区域设置在第一层中并与第一杂质扩散区间隔开。 第二杂质扩散区域到达下面的衬底的表面。 分离区域设置在第一和第二杂质扩散区之间。 分离区域包括形成在第一层中的沟槽和至少设置在沟槽的部分内部区域中的电介质材料。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20090090981A1

    公开(公告)日：2009-04-09

    申请号：US12244561

    申请日：2008-10-02

    申请人： Kazuhiro NATSUAKI

    发明人： Kazuhiro NATSUAKI

    IPC分类号： H01L47/00

    CPC分类号： H01L29/7816 ,  H01L21/74 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/66681

    摘要： A semiconductor device which has a high dielectric strength and allows its on resistance to be made sufficiently small is provided. This semiconductor device comprises a first electroconducive-type semiconductor layer, and a gate electrode which is disposed on a given region of an insulation film formed on the main surface of the semiconductor layer. The semiconductor layer includes: a body region of the first electroconducive type which is formed near the main surface side; a drain region of the second electroconducive type which is formed near the main surface side; and a buried region of the second electroconducive type which is formed in a position that is not right under the body region and right under at least the drain region and is connected to the drain region.

    摘要翻译： 提供了具有高介电强度并且允许其导通电阻足够小的半导体器件。 该半导体器件包括第一电导型半导体层和设置在形成在半导体层的主表面上的绝缘膜的给定区域上的栅电极。 半导体层包括：形成在主表面侧附近的第一电导型的主体区域; 形成在主表面侧附近的第二电导型漏极区; 以及第二电导型的埋入区域，其形成在不在体区域正下方的位置，并且至少在漏极区域下方并且连接到漏极区域。

    Photodiode device including window defined in passivation layer for removing electrostatic charge
    8.
    发明授权
    Photodiode device including window defined in passivation layer for removing electrostatic charge 失效
    光电二极管器件包括在钝化层中定义的窗口，用于去除静电电荷

    公开(公告)号：US06873025B2

    公开(公告)日：2005-03-29

    申请号：US09984657

    申请日：2001-10-30

    申请人： Hideo Wada ,  Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Shigeki Hayashida

    发明人： Hideo Wada ,  Isamu Ohkubo ,  Kazuhiro Natsuaki ,  Naoki Fukunaga ,  Shigeki Hayashida

    IPC分类号： H01L27/14 ,  H01L29/40 ,  H01L29/88 ,  H01L31/0216 ,  H01L31/06 ,  H01L31/10

    CPC分类号： H01L31/02161

    摘要： A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.

    摘要翻译： 光电二极管包括第一导电类型半导体衬底或第一导电类型半导体层; 设置在所述第一导电型半导体基板或所述第一导电型半导体层上的第二导电型半导体层; 设置在所述第二导电型半导体层的位于光接收区域的部分的表面上的防反射膜; 设置在所述光接收区域附近的区域中的第一导电层; 以及设置在第一导电层上的钝化层。 通过第一导电类型半导体衬底和第一导电类型半导体层之一以及第二导电类型半导体层的接合来检测入射在光电二极管上的光。 光接收区域附近的区域包括在钝化层中具有用于部分地暴露第一导电层的开口的窗口区域。