公开(公告)号：US07604709B2

公开(公告)日：2009-10-20

申请号：US10247555

申请日：2002-09-20

申请人： Masaru Kurihara ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Takashi Tsutsumi

发明人： Masaru Kurihara ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Takashi Tsutsumi

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.

摘要翻译： 一种等离子体处理装置，其在宽范围的压力和密度条件下，使用宽范围的种子气体稳定且连续地产生均匀的等离子体以处理大直径晶片，并且可以用于广泛的应用，确保高的生产效率 。 通过电介质窗将电磁波引入减压容器中的等离子体处理装置具有旋转对称的至少两个天线元件。 每个天线的一端接地，并且电源从高频电源馈送到另一端，处于相同或相同的相位。

公开(公告)号：US08129283B2

公开(公告)日：2012-03-06

申请号：US12068889

申请日：2008-02-13

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： H01L21/302

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

摘要翻译： 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US20080190893A1

公开(公告)日：2008-08-14

申请号：US12068889

申请日：2008-02-13

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

摘要翻译： 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US07396771B2

公开(公告)日：2008-07-08

申请号：US11362867

申请日：2006-02-28

申请人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

发明人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/32137 ,  H01L21/67248 ,  H01L21/67253

摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

摘要翻译： 一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应 用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由 样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度 样品架独立控制。

公开(公告)号：US20060096706A1

公开(公告)日：2006-05-11

申请号：US11315316

申请日：2005-12-23

申请人： Naoyuki Kofuji ,  Masahito Mori ,  Ken'etsu Yokogawa ,  Naoshi Itabashi ,  Kazunori Tsujimoto ,  Shin'ichi Tachi

发明人： Naoyuki Kofuji ,  Masahito Mori ,  Ken'etsu Yokogawa ,  Naoshi Itabashi ,  Kazunori Tsujimoto ,  Shin'ichi Tachi

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01L21/32136 ,  H01L21/32137

摘要： The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.

摘要翻译： 在干蚀刻中实现了具有低栅极破坏率和高各向异性的处理。 等离子体是通过电磁波的ECR共振产生的，其通过在布置在电介质2的大气层上的微阵列4中提供超高频电力而产生，该电介质2将真空内部和外部以及磁场分离。 通过该等离子体蚀刻导电层，其是稳定且均匀的等离子体。

公开(公告)号：US20070056929A1

公开(公告)日：2007-03-15

申请号：US11362867

申请日：2006-02-28

申请人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

发明人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

IPC分类号： C23F1/00 ,  G01L21/30 ,  H01L21/306 ,  H01L21/302 ,  G01R31/00

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/32137 ,  H01L21/67248 ,  H01L21/67253

摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

摘要翻译： 一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应 用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由 样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度 样品架独立控制。

公开(公告)号：US08546266B2

公开(公告)日：2013-10-01

申请号：US13212909

申请日：2011-08-18

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： H01L21/302

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

公开(公告)号：US20070232067A1

公开(公告)日：2007-10-04

申请号：US11692241

申请日：2007-03-28

申请人： Kousa Hirota ,  Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Toshio Masuda

发明人： Kousa Hirota ,  Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Toshio Masuda

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/28123

摘要： The invention provides a semiconductor fabrication method comprising a deposition step for depositing a laminated film on a semiconductor substrate having a region in which a mask pattern is formed sparsely and a region in which the mask pattern is formed densely, a lithography step s1 for forming a mask pattern, a cleaning step S11C for removing deposits in the apparatus, a trimming step S3 for trimming the mask pattern, and dry etching steps S4 and S5 for transferring the mask pattern on the laminated film, wherein a seasoning step S11S followed by a deposition step S2 is introduced either before or after the trimming step S3.

摘要翻译： 本发明提供了一种半导体制造方法，包括：沉积步骤，用于在具有稀疏形成掩模图案的区域的半导体衬底上沉积层压膜，以及密集形成掩模图案的区域;用于形成的光刻步骤s1 掩模图案，用于去除设备中的沉积物的清洁步骤S111，用于修整掩模图案的修整步骤S3以及用于将掩模图案转印到层压膜上的干蚀刻步骤S 4和S 5，其中调味 在修整步骤S 3之前或之后引入步骤S11A，然后进行沉积步骤S2。

公开(公告)号：US06797112B2

公开(公告)日：2004-09-28

申请号：US10408242

申请日：2003-04-08

申请人： Naoshi Itabashi ,  Naoyuki Kofuji ,  Yasunori Goto

发明人： Naoshi Itabashi ,  Naoyuki Kofuji ,  Yasunori Goto

IPC分类号： H05H100

CPC分类号： H01J37/32284 ,  H01J37/32192 ,  H01L21/32137

摘要： A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root over (&egr;)}) in terms of the characteristic length.

摘要翻译： 将电介质窗口的电磁波引入到低压室的等离子体处理装置具有设置在电介质窗口的周边部附近的驻波控制部，除了入口以外的部分被导体包围，具有形状 和等于深度d = 1/4 + 1 / 2x（n-1）±1/8的尺寸：（n =正整数，l = c（光速）/ f / {平方根超过（ε）}） 在特征长度方面。

公开(公告)号：US20070199657A1

公开(公告)日：2007-08-30

申请号：US11500360

申请日：2006-08-08

申请人： Naoyuki Kofuji ,  Hiroshi Akiyama

发明人： Naoyuki Kofuji ,  Hiroshi Akiyama

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/32137 ,  H01J37/3244 ,  H01J37/32935

摘要： The invention aims at solving the problems of throughput deterioration, reproducibility deterioration and plasma discharge instability when performing continuous discharge during multiple steps of plasma etching. According to the present invention, the gas supply unit is operated while determining the timing for switching conditions of a plurality of plasma etching steps, and the gas flow rate and gas pressure are controlled so that the pressure of processing gas supplied from the gas supply unit to the processing chamber does not fall below a predetermined pressure immediately subsequent to switching steps. For example, upon switching processing gases, the end point of a step is predicted based on an interference film thickness meter, and prior to the end point by two seconds or more, the flow rate of MFC is set to the gas flow rate for the subsequent step and the gas is flown to the exhaust device, so that simultaneously as when the end point signal is received, the processing gases are switched by switching valves.

摘要翻译： 本发明旨在解决在等离子体蚀刻的多个步骤期间执行连续放电时的吞吐量劣化，再现性劣化和等离子体放电不稳定性的问题。 根据本发明，在确定多个等离子体蚀刻步骤的切换条件的定时的同时操作气体供给单元，并且控制气体流量和气体压力，使得从气体供应单元供应的处理气体的压力 到切换步骤之后，处理室不会下降到预定压力以下。 例如，在切换处理气体时，基于干涉膜厚度计预测台阶的终点，并且在终点2秒以上之前，将MFC的流量设定为 随后的步骤和气体流到排气装置，从而同时当接收到终点信号时，处理气体由切换阀切换。