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公开(公告)号：US20080230800A1
公开(公告)日：2008-09-25
申请号：US10585744
申请日：2005-04-27
Applicant: Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
Inventor： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
IPC: H01L33/00 , H01L29/22 , H01L21/205
CPC classification number: H01L33/025 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/32
Abstract: An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
Abstract translation: 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。
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公开(公告)号：US07855386B2
公开(公告)日：2010-12-21
申请号：US10585744
申请日：2005-04-27
Applicant: Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
Inventor： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
CPC classification number: H01L33/025 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/32
Abstract: An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
Abstract translation: 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。
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3.发明授权Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof 有权氮化物半导体; 发光装置，发光二极管，激光装置和使用该半导体的灯; 及其制造方法公开(公告)号：US07488971B2
公开(公告)日：2009-02-10
申请号：US10574202
申请日：2004-10-01
Applicant: Masato Kobayakawa , Hideki Tomozawa , Mineo Okuyama
Inventor： Masato Kobayakawa , Hideki Tomozawa , Mineo Okuyama
IPC: H01L29/06
CPC classification number: H01L33/007 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/3086 , H01S5/3407 , H01S5/34333 , H01S2304/04
Abstract: A nitride semiconductor product including an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer. Each barrier layer includes a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C. The barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.
Abstract translation: 一种氮化物半导体产品，包括由氮化物半导体形成的n型层，发光层和p型层，并按顺序层叠在基板上，发光层具有量子阱 其中阱层被具有比阱层的带隙宽的带隙的势垒层夹持的结构。 每个阻挡层包括在比阱层的生长温度高的温度下生长的阻挡层C，以及在低于势垒层C的生长温度的温度下生长的势垒层E。 子层C相对于阻挡子层E更靠近衬底设置。
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4.发明申请Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof 有权氮化物半导体; 发光装置，发光二极管，激光装置和使用该半导体的灯; 及其制造方法公开(公告)号：US20070012932A1
公开(公告)日：2007-01-18
申请号：US10574202
申请日：2004-10-01
Applicant: Masato Kobayakawa , Hideki Tomozawa , Mineo Okuyama
Inventor： Masato Kobayakawa , Hideki Tomozawa , Mineo Okuyama
IPC: H01L33/00
CPC classification number: H01L33/007 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/325 , H01S5/3086 , H01S5/3407 , H01S5/34333 , H01S2304/04
Abstract: An object of the present invention is to provide a nitride semiconductor product which causes no time-dependent deterioration in reverse withstand voltage and maintains a satisfactory initial reverse withstand voltage. The inventive nitride semiconductor product comprises an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer, wherein each barrier layer comprises a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C, and the barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.
Abstract translation: 本发明的目的是提供一种氮化物半导体产品，其不会导致反向耐受电压的时间依赖性劣化并且保持令人满意的初始反向耐受电压。 本发明的氮化物半导体产品包括由氮化物半导体形成的n型层，发光层和p型层，并按顺序层叠在基板上，发光层具有量子 其中阱层被具有比阱层的带隙宽的带隙的势垒层夹持的阱结构，其中每个势垒层包括在比阱层的生长温度高的温度下生长的势垒层C ，以及在低于势垒层C的生长温度的温度下生长的势垒层E，并且阻挡子层C相对于势垒子层E配置为更靠近衬底。
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5.发明申请公开(公告)号：US20070040183A1
公开(公告)日：2007-02-22
申请号：US10572680
申请日：2004-09-21
Applicant: Hideki Tomozawa , Mineo Okuyama , Noritaka Muraki , Soichiro Masuyama
Inventor： Hideki Tomozawa , Mineo Okuyama , Noritaka Muraki , Soichiro Masuyama
IPC: H01L33/00
Abstract: An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.
Abstract translation: 本发明的目的是提供一种用于氮化镓基化合物半导体发光器件的透光电极，该电极具有改善的透光性和接触电阻。 本发明的电极包括与氮化镓基化合物半导体发光器件中的p接触层的表面接触并且能够提供欧姆接触的透光性第一层，并且第二层是 与所述p接触层的表面的一部分接触，其中所述第一层包含金属或两种或更多种金属的合金，所述金属选自Au，Pt，Pd，Ni，Co和 Rh，并且第二层包含选自由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的第二组中的至少一种金属的氧化物。
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Patent Agency Ranking
公开(公告)号：US20070152232A1
公开(公告)日：2007-07-05
申请号：US10591584
申请日：2005-03-03
Applicant: Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
Inventor： Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
IPC: H01L33/00
CPC classification number: H01L29/2003 , H01L31/0304 , H01L31/105 , H01L33/14 , H01L33/32 , Y02E10/544
Abstract: A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.
Abstract translation: 氮化镓基半导体器件具有作为包含p型杂质且呈p型导电的氮化镓（GaN）化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部部分含有p型杂质，并与其结合，含有氢。 顶部包括含有非化学计量原子比的III族元素和V族元素的区域。
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7.发明授权公开(公告)号：US07402841B2
公开(公告)日：2008-07-22
申请号：US10572680
申请日：2004-09-21
Applicant: Hideki Tomozawa , Mineo Okuyama , Noritaka Muraki , Soichiro Masuyama
Inventor： Hideki Tomozawa , Mineo Okuyama , Noritaka Muraki , Soichiro Masuyama
Abstract: An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance.The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.
Abstract translation: 本发明的目的是提供一种用于氮化镓基化合物半导体发光器件的透光电极，该电极具有改善的透光性和接触电阻。 本发明的电极包括与氮化镓基化合物半导体发光器件中的p接触层的表面接触并且能够提供欧姆接触的透光性第一层，并且第二层是 与所述p接触层的表面的一部分接触，其中所述第一层包含金属或两种或更多种金属的合金，所述金属选自Au，Pt，Pd，Ni，Co和 Rh，并且第二层包含选自由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的第二组中的至少一种金属的氧化物。
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公开(公告)号：US07436045B2
公开(公告)日：2008-10-14
申请号：US10591584
申请日：2005-03-03
Applicant: Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
Inventor： Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
IPC: H01L29/20
CPC classification number: H01L29/2003 , H01L31/0304 , H01L31/105 , H01L33/14 , H01L33/32 , Y02E10/544
Abstract: A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.
Abstract translation: 氮化镓基半导体器件具有作为包含p型杂质且呈p型导电的氮化镓（GaN）化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部部分含有p型杂质，并与其结合，含有氢。 顶部包括含有非化学计量原子比的III族元素和V族元素的区域。
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公开(公告)号：US07453091B2
公开(公告)日：2008-11-18
申请号：US10591585
申请日：2005-03-03
Applicant: Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
Inventor： Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
IPC: H01L29/26
CPC classification number: H01L31/0304 , H01L33/025 , H01L33/32 , H01S5/3054 , H01S5/32341 , Y02E10/544
Abstract: A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
Abstract translation: 氮化镓类半导体器件具有作为含有p型杂质且呈p型导电性的氮化镓系化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部包含p型杂质元素，并与其组合，包含氢。
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公开(公告)号：US20070187693A1
公开(公告)日：2007-08-16
申请号：US10591585
申请日：2005-03-03
Applicant: Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
Inventor： Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
CPC classification number: H01L31/0304 , H01L33/025 , H01L33/32 , H01S5/3054 , H01S5/32341 , Y02E10/544
Abstract: A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
Abstract translation: 氮化镓类半导体器件具有作为含有p型杂质且呈p型导电性的氮化镓系化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部包含p型杂质元素，并与其组合，包含氢。
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