公开(公告)号：US20080289573A1

公开(公告)日：2008-11-27

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： B05B5/00

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US20060186412A1

公开(公告)日：2006-08-24

申请号：US11408022

申请日：2006-04-21

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L29/76

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US08114217B2

公开(公告)日：2012-02-14

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： C30B1/02

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US07410848B2

公开(公告)日：2008-08-12

申请号：US10878331

申请日：2004-06-29

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L21/84

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US07405141B2

公开(公告)日：2008-07-29

申请号：US11679724

申请日：2007-02-27

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US07247813B2

公开(公告)日：2007-07-24

申请号：US11246265

申请日：2005-10-11

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： B23K26/00 ,  H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulseoscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲激光准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测，并且 当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置以进行结晶。

公开(公告)号：US20060131289A1

公开(公告)日：2006-06-22

申请号：US11246265

申请日：2005-10-11

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： B23K26/03

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US20070141815A1

公开(公告)日：2007-06-21

申请号：US11679724

申请日：2007-02-27

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US20060033104A1

公开(公告)日：2006-02-16

申请号：US11197637

申请日：2005-08-05

申请人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

发明人： Yoshiaki Nakazaki ,  Fumiki Nakano ,  Genshiro Kawachi ,  Terunori Warabisako ,  Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Tomoya Kato

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L27/12

CPC分类号： H01L21/02675 ,  B23K26/073 ,  G02F1/13454 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.

摘要翻译： 公开了一种在半导体薄膜中具有晶体沿横向生长的源极区，沟道区和漏极区的薄膜晶体管，薄膜晶体管具有栅极绝缘膜和位于上部的栅电极 沟道区域的一部分，其中漏极区域或源极区域的沟道区域侧边缘部分以这样的方式设置，以便位于横向生长的结束位置附近。

公开(公告)号：US20090134394A1

公开(公告)日：2009-05-28

申请号：US12277732

申请日：2008-11-25

申请人： Kazufumi AZUMA ,  Shigeyuki Shimoto ,  Masakiyo Matsumura ,  Takahiko Endo ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Kazufumi AZUMA ,  Shigeyuki Shimoto ,  Masakiyo Matsumura ,  Takahiko Endo ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1285 ,  H01L21/02381 ,  H01L21/02686 ,  H01L27/1296 ,  H01L29/04

摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.

摘要翻译： 晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。 结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。