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    System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
    1.
    发明授权
    System level in-situ integrated dielectric etch process particularly useful for copper dual damascene 失效
    系统级原位集成电介质蚀刻工艺特别适用于铜双镶嵌

    公开(公告)号：US06949203B2

    公开(公告)日：2005-09-27

    申请号：US10379439

    申请日：2003-03-03

    申请人： Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Brian Sy Yuan Shieh ,  Gerald Zheyao Yin ,  Jennifer Sun ,  Senh Thach ,  Lee Luo ,  Claes H. Bjorkman

    发明人： Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Brian Sy Yuan Shieh ,  Gerald Zheyao Yin ,  Jennifer Sun ,  Senh Thach ,  Lee Luo ,  Claes H. Bjorkman

    IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/76832 ,  H01J37/32458 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67219 ,  H01L21/6723 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76807

    摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.

    摘要翻译： 在具有第一和第二蚀刻室的多室衬底处理系统中执行的集成原位蚀刻工艺。 在一个实施例中，第一室包括已经被粗糙化至少100个的内表面，而第二室包括具有小于约32μm的粗糙度的内表面， / SUB>。 该方法包括在向下的方向上转移其上形成有图案的光致抗蚀剂掩模，电介质层，阻挡层和衬底中的特征的衬底，以接触第一室，其中介电层被刻蚀在鼓励聚合物的过程中 在室的粗糙内表面上形成。 然后在真空条件下将衬底从第一室转移到第二室，并且在第二室中暴露于诸如氧的反应性等离子体以剥离沉积在衬底上的光致抗蚀剂掩模。 在光致抗蚀剂掩模被剥离之后，通过阻止在第二室的相对光滑的内表面上聚合物形成的工艺，阻挡层被蚀刻到多室基板处理系统的第二室中以接触的特征。 所有三个蚀刻步骤都是在系统级原位工艺中进行的，因此基板不会在台阶之间暴露于环境中。 在一些实施例中，第一室的内表面具有在100和200之间的粗糙度，而在其它实施例中，第一室的内表面的粗糙度在110和160之间， SUB>。

    Process kit for erosion resistance enhancement
    2.
    发明申请
    Process kit for erosion resistance enhancement 审中-公开
    防腐蚀加工工艺套件

    公开(公告)号：US20050016684A1

    公开(公告)日：2005-01-27

    申请号：US10627213

    申请日：2003-07-25

    申请人： Jennifer Sun ,  Ananda Kumar ,  Senh Thach

    发明人： Jennifer Sun ,  Ananda Kumar ,  Senh Thach

    IPC分类号： H01L21/3065 ,  H01J37/32 ,  C23F1/00

    CPC分类号： H01J37/32477 ,  H01J37/32642

    摘要： A process kit is described that resists plasma erosion, preserves the spatial uniformity of plasma properties, reduces particle generation in the chamber, and significantly enhances the lifetime of the process kit. A layer of polymer material covers the top surface of the process kit. The polymer material is fluorocarbon-based and not reactive with the species in the plasma. The polymer material not only protects the process kit from progressive erosion, but also prevents the generation of particles in the chamber. The polymer material has similar permittivity to that of the process kit and therefore maintains the spatial uniformity of plasma properties, e.g., etch rate, near the wafer perimeter. The thickness of the layer is controlled between 0.5 and 1.5 mm such that the difference between its coefficient of thermal expansion and that of the process kit will not cause the layer to peel off the process kit's top surface.

    摘要翻译： 描述了一种防止等离子体侵蚀的过程套件，保持了等离子体性质的空间均匀性，减少了腔室中的颗粒产生，并显着提高了工艺套件的使用寿命。 一层聚合物材料覆盖了工艺套件的顶面。 聚合物材料是基于碳氟化合物的，并且不与等离子体中的物质反应。 聚合物材料不仅可保护工艺套件免受逐渐侵蚀，还可防止腔室中产生颗粒。 聚合物材料具有与处理试剂盒相似的介电常数，因此在晶片周边附近保持等离子体特性（例如蚀刻速率）的空间均匀性。 将该层的厚度控制在0.5至1.5mm之间，使得其热膨胀系数与处理套件的热导率差不会导致该层从工艺套件的顶部表面剥离。

    Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
    3.
    发明申请
    Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate 有权
    由固体含氧化钇基底制成的气体分配板

    公开(公告)号：US20050056218A1

    公开(公告)日：2005-03-17

    申请号：US10918232

    申请日：2004-08-13

    申请人： Jennifer Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh Pham

    发明人： Jennifer Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh Pham

    IPC分类号： C23C16/44 ,  C23C28/00 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

    摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

    摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 含固体氧化钇的基材通常包含至少99.9％的氧化钇，其密度为至少4.92g / cm 3，吸水率为约0.02％或更低，平均晶粒尺寸为 约10毫米至约25毫米。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

    GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING
    4.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING 审中-公开
    具有涂层材料的气体分布式淋浴器用于半导体加工

    公开(公告)号：US20110198034A1

    公开(公告)日：2011-08-18

    申请号：US13011839

    申请日：2011-01-21

    申请人： Jennifer Sun ,  Senh Thach ,  Ren-Guan Duan ,  Thomas Graves

    发明人： Jennifer Sun ,  Senh Thach ,  Ren-Guan Duan ,  Thomas Graves

    IPC分类号： H01L21/00 ,  C23C4/12 ,  C23C16/455 ,  C23C16/50 ,  C23F1/08

    CPC分类号： H01J37/3244 ,  C23C4/02 ,  C23C4/11 ,  C23C4/18

    摘要： Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes.

    摘要翻译： 这里描述了根据一个实施例的用于制造气体分配喷头组件的示例性方法和装置。 在一个实施例中，一种方法包括提供具有第一组通孔的气体分配板，用于将处理气体输送到半导体处理室中。 第一组通孔位于板的背面（例如铝基板）上。 该方法包括将涂层材料（例如，基于Ytrria的材料）喷雾（例如，等离子体喷涂）到气体分配板的清洁表面上。 该方法包括从表面去除（例如，表面研磨）涂层材料的一部分以减小涂层材料的厚度。 该方法包括在涂层材料中形成（例如UV激光钻孔，加工）第二组通孔，使得通孔与第一组通孔对齐。

    Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
    5.
    发明申请
    Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 有权
    清洁，致密的氧化钇涂层保护半导体加工设备

    公开(公告)号：US20050037193A1

    公开(公告)日：2005-02-17

    申请号：US10898113

    申请日：2004-07-22

    申请人： Jennifer Sun ,  Senh Thach ,  Jim Dempster ,  Li Xu

    发明人： Jennifer Sun ,  Senh Thach ,  Jim Dempster ,  Li Xu

    IPC分类号： C23C16/44 ,  C23C28/00 ,  B32B15/04

    CPC分类号： C30B35/00 ,  C23C4/11 ,  C23C4/18 ,  C23C14/00 ,  C23C16/4404 ,  C23C28/042 ,  Y10S134/902 ,  Y10T428/26

    摘要： Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.

    摘要翻译： 本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。 将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。 涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。 涂层可以进一步包含约20体积％或更少的Al 2 O 3。 涂层通常使用选自热/火焰喷涂，等离子喷涂，溅射和化学气相沉积（CVD）的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。 为了提供所需的耐腐蚀性，必须将涂层置于压缩状态。 这是通过在施加涂层期间控制沉积条件来实现的。

    METHOD OF FABRICATING PLASMA REACTOR PARTS
    6.
    发明申请
    METHOD OF FABRICATING PLASMA REACTOR PARTS 有权
    制备等离子体反应器部件的方法

    公开(公告)号：US20080233022A1

    公开(公告)日：2008-09-25

    申请号：US11688011

    申请日：2007-03-19

    申请人： Elmira Ryabova ,  Jie Yuan ,  Jennifer Sun

    发明人： Elmira Ryabova ,  Jie Yuan ,  Jennifer Sun

    IPC分类号： B01J19/00 ,  C01B33/02 ,  F27B15/00

    CPC分类号： C30B25/00 ,  C30B29/06 ,  C30B33/02 ,  H01J37/32495 ,  H01J37/32642

    摘要： A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and post-machining anneal are designed to provide silicon parts that are particularly suited for use in corrosive environments.

    摘要翻译： 本文提供了制造硅部件的方法。 该方法包括生长硅样品，加工样品以形成部分，以及通过将部件依次暴露于一种或多种气体来对部件进行退火。 硅生长和后加工退火过程中的工艺条件被设计成提供特别适用于腐蚀性环境的硅部件。

    METHOD FOR FABRICATING PLASMA REACTOR PARTS
    7.
    发明申请
    METHOD FOR FABRICATING PLASMA REACTOR PARTS 有权
    制造等离子体反应器部件的方法

    公开(公告)号：US20080099148A1

    公开(公告)日：2008-05-01

    申请号：US11766626

    申请日：2007-06-21

    申请人： Elmira Ryabova ,  Jennifer Sun ,  Jie Yuan

    发明人： Elmira Ryabova ,  Jennifer Sun ,  Jie Yuan

    IPC分类号： C22F1/18 ,  H05H1/02

    CPC分类号： C04B35/505 ,  C04B35/64 ,  C04B2235/662 ,  C04B2235/663 ,  H01J37/32467 ,  Y10T29/49002

    摘要： A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part by heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate. At least one of the sintering and annealing atmospheres is an oxygen-containing atmosphere.

    摘要翻译： 本文提供了制造氧化钇部件的方法。 在一个实施方案中，该方法包括烧结氧化钇样品，加工烧结样品以形成部分，并且通过以预定加热速率加热该部件并使部件保持在恒定的退火温度并对部件进行退火 预定冷却速度。 烧结和退火气氛中的至少一个是含氧气氛。

    Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate
    9.
    发明申请
    Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate 有权
    用于从含固体含氧化钇的底物中除去污染物的清洁方法

    公开(公告)号：US20070151581A1

    公开(公告)日：2007-07-05

    申请号：US11592905

    申请日：2006-11-03

    申请人： Xikun Wang ,  Li Xu ,  Jennifer Sun

    发明人： Xikun Wang ,  Li Xu ,  Jennifer Sun

    IPC分类号： B08B3/00

    CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

    摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

    摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的基材通常包含至少99.9％的氧化钇，并且具有至少4.92g / cm 3的密度，约0.02％或更低的吸水率和平均颗粒 尺寸在约10um至约25um的范围内。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。