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公开(公告)号：US06776850B2
公开(公告)日：2004-08-17
申请号：US10165541
申请日：2002-06-08
申请人： Miao-Cheng Liao , Ying-Lang Wang , Hung-Hsin Liang , Hsiang-Sheng Cheng , Sheng-Te Shu , Chih-Yuan Yang
发明人： Miao-Cheng Liao , Ying-Lang Wang , Hung-Hsin Liang , Hsiang-Sheng Cheng , Sheng-Te Shu , Chih-Yuan Yang
IPC分类号： C23C1600
CPC分类号： H01L21/67126 , C23C16/4401 , C23C16/4407
摘要： A preventive maintenance tool which may be installed on a metal chemical vapor deposition (CVD) chamber to prevent escape of contaminating and toxic gases from the chamber interior during preventative maintenance (PM) cleaning of the chamber. The tool comprises a cylindrical tool body which fits to the lid O-ring of the chamber to form a gas-tight seal therewith; a vacuum line connector nipple extending from the body for connection to a vacuum line; and a lid panel rotatably mounted in the body and fitted with a pair of hinged closing panels for reversibly sealing the chamber and facilitating chamber cleaning.
摘要翻译： 预防性维护工具，其可以安装在金属化学气相沉积（CVD）室上，以防止腔室内的污染和有毒气体从室内预防性维护（PM）清洗过程中逸出。 该工具包括圆柱形工具主体，该圆柱形工具主体适合于室的盖O形环以与其形成气密密封; 从主体延伸以连接到真空管线的真空管线连接器接头; 以及盖板，其可旋转地安装在主体中并且装配有一对铰接的关闭板，用于可逆地密封室并促进室清洁。
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公开(公告)号：US20120292639A1
公开(公告)日：2012-11-22
申请号：US13111732
申请日：2011-05-19
IPC分类号： H01L29/06 , H01L29/24 , H01L21/762
CPC分类号： H01L21/823807 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
摘要翻译： 公开了一种制造半导体器件的半导体器件和方法。 用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。 该方法包括提供衬底并在衬底上形成电介质层。 该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层 活动层
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公开(公告)号：US20050074554A1
公开(公告)日：2005-04-07
申请号：US10679764
申请日：2003-10-06
申请人： Shiu-Ko Jangjian , Sheng-Wen Chen , Miao-Cheng Liao , Hung-Jui Chang , Ming-Hui Lin , Ying-Lang Wang
发明人： Shiu-Ko Jangjian , Sheng-Wen Chen , Miao-Cheng Liao , Hung-Jui Chang , Ming-Hui Lin , Ying-Lang Wang
IPC分类号： B32B17/06 , C23C16/26 , C23C16/40 , C23C16/56 , H01L21/316
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02167 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/31629 , H01L21/31633
摘要： A inter-metal dielectric layer structure and the method of the same are provided. The method includes the following steps. A process gas is introduced to form a low-k dielectric layer over the substrate. A reactant gas is in situ introduced to etch the low-k dielectric layer back and to react with the process gas to form a dielectric layer containing an extra element on the low-k dielectric layer. The extra element is provided by the reactant gas. A volume ratio of the reactant gas to the process gas is larger than about 2. The reactant gas may be a nitrogen fluoride (NF3) gas for providing extra nitrogen (N) or a carbon fluoride (CxFy) gas for providing extra carbon (C).
摘要翻译： 提供金属间介电层结构及其方法。 该方法包括以下步骤。 引入工艺气体以在衬底上形成低k电介质层。 原位引入反应气体以将低k电介质层回蚀刻并与工艺气体反应，形成在低k电介质层上含有额外元素的电介质层。 额外的元素由反应物气体提供。 反应气体与工艺气体的体积比大于约2.反应气体可以是用于提供额外的氮（N）或氟化碳（C x F y）气体的氮氟化物（NF 3）气体，用于提供额外的碳（C ）。
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公开(公告)号：US20130193540A1
公开(公告)日：2013-08-01
申请号：US13436364
申请日：2012-03-30
申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/0216
CPC分类号： H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译： 一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层 层上的等离子体增强钝化层。
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5.发明申请公开(公告)号：US20050202616A1
公开(公告)日：2005-09-15
申请号：US10798959
申请日：2004-03-10
IPC分类号： G02F1/1337
CPC分类号： H01L28/40 , Y10S438/957
摘要： An MIM structure and method for forming the same the method including forming a bottom conductive electrode overlying a semiconducting substrate; forming a first protection layer on the conductive electrode; forming a dielectric layer on the first protection layer; and, forming an upper conductive electrode on the dielectric layer to form a metal-insulator-metal (MIM) structure.
摘要翻译： 一种MIM结构及其形成方法，包括形成覆盖在半导体衬底上的底部导电电极; 在导电电极上形成第一保护层; 在所述第一保护层上形成电介质层; 并且在所述电介质层上形成上导电电极以形成金属绝缘体金属（MIM）结构。
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公开(公告)号：US08455883B2
公开(公告)日：2013-06-04
申请号：US13111732
申请日：2011-05-19
IPC分类号： H01L29/15 , H01L31/052 , H01L21/331
CPC分类号： H01L21/823807 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.
摘要翻译： 公开了一种制造半导体器件的半导体器件和方法。 用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。 该方法包括提供衬底并在衬底上形成电介质层。 该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层 活动层
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公开(公告)号：US20060051973A1
公开(公告)日：2006-03-09
申请号：US10937215
申请日：2004-09-09
申请人： Yi-Lung Cheng , Miao-Cheng Liao , Ying-Lang Wang
发明人： Yi-Lung Cheng , Miao-Cheng Liao , Ying-Lang Wang
IPC分类号： H01L21/469
CPC分类号： H01L21/76807
摘要： A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.
摘要翻译： 一种形成IMD膜的方法。 提供基板。 在基板上形成多个电介质膜，其中每个电介质层原位沉积在仅具有一个热循环的一个室中。
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公开(公告)号：US09379275B2
公开(公告)日：2016-06-28
申请号：US13436364
申请日：2012-03-30
申请人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人： Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号： H01L31/18 , H01L31/103 , H01L27/146
CPC分类号： H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译： 一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层 层上的等离子体增强钝化层。
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公开(公告)号：US07253121B2
公开(公告)日：2007-08-07
申请号：US10937215
申请日：2004-09-09
申请人： Yi-Lung Cheng , Miao-Cheng Liao , Ying-Lang Wang
发明人： Yi-Lung Cheng , Miao-Cheng Liao , Ying-Lang Wang
IPC分类号： H01L21/471
CPC分类号： H01L21/76807
摘要： A method for forming IMD films. A substrate is provided. A plurality of dielectric films are formed on the substrate, wherein each of the dielectric layers are deposited in-situ in one chamber with only one thermal cycle.
摘要翻译： 一种形成IMD膜的方法。 提供基板。 在基板上形成多个电介质膜，其中每个电介质层原位沉积在仅具有一个热循环的一个室中。
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10.发明授权公开(公告)号：US07205634B2
公开(公告)日：2007-04-17
申请号：US10798959
申请日：2004-03-10
IPC分类号： H01L29/00
CPC分类号： H01L28/40 , Y10S438/957
摘要： An MIM structure and method for forming the same the method including forming a bottom conductive electrode overlying a semiconducting substrate; forming a first protection layer on the conductive electrode; forming a dielectric layer on the first protection layer; and, forming an upper conductive electrode on the dielectric layer to form a metal-insulator-metal (MIM) structure.
摘要翻译： 一种MIM结构及其形成方法，包括形成覆盖在半导体衬底上的底部导电电极; 在导电电极上形成第一保护层; 在所述第一保护层上形成电介质层; 并且在所述电介质层上形成上导电电极以形成金属绝缘体金属（MIM）结构。
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