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    Patterning self-aligned transistors using back surface illumination
    3.
    发明授权
    Patterning self-aligned transistors using back surface illumination 有权
    使用背面照明形成自对准晶体管

    公开(公告)号：US07629206B2

    公开(公告)日：2009-12-08

    申请号：US11710880

    申请日：2007-02-26

    申请人： Michael Albert Haase ,  Robert A. Street

    发明人： Michael Albert Haase ,  Robert A. Street

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/7869 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78603

    摘要： Fabrication methods for making thin film devices on transparent substrates are described. Gate, source, and drain electrodes of a transistor are formed on a transparent substrate. The widths of the drain electrode and source electrodes are greater than a width of the gate electrode. A dielectric layer is formed on the gate electrode. A semiconductor layer is deposited proximate to the gate, source and drain electrodes. Photoresist is deposited on the semiconductor. The photoresist is exposed to light directed through the transparent substrate so that the gate electrode masks the photoresist from the light. The semiconductor layer is removed in regions exposed to the light.

    摘要翻译： 描述了在透明基板上制造薄膜器件的制造方法。 晶体管的栅极，源极和漏极形成在透明衬底上。 漏电极和源电极的宽度大于栅电极的宽度。 在栅电极上形成介电层。 半导体层沉积在栅极，源极和漏极附近。 光致抗蚀剂沉积在半导体上。 光致抗蚀剂暴露于穿过透明基板的光，使得栅极电极遮蔽光致抗蚀剂。 在暴露于光的区域中去除半导体层。

    Patterning self-aligned transistors using back surface illumination
    7.
    发明申请
    Patterning self-aligned transistors using back surface illumination 有权
    使用背面照明形成自对准晶体管

    公开(公告)号：US20080206914A1

    公开(公告)日：2008-08-28

    申请号：US11710880

    申请日：2007-02-26

    申请人： Michael Albert Haase ,  Robert A. Street

    发明人： Michael Albert Haase ,  Robert A. Street

    IPC分类号： H01L33/00 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78603

    摘要： Fabrication methods for making thin film devices on transparent substrates are described. Gate, source, and drain electrodes of a transistor are formed on a transparent substrate. The widths of the drain electrode and source electrodes are greater than a width of the gate electrode. A dielectric layer is formed on the gate electrode. A semiconductor layer is deposited proximate to the gate, source and drain electrodes. Photoresist is deposited on the semiconductor. The photoresist is exposed to light directed through the transparent substrate so that the gate electrode masks the photoresist from the light. The semiconductor layer is removed in regions exposed to the light.

    摘要翻译： 描述了在透明基板上制造薄膜器件的制造方法。 晶体管的栅极，源极和漏极形成在透明衬底上。 漏电极和源电极的宽度大于栅电极的宽度。 在栅电极上形成介电层。 半导体层沉积在栅极，源极和漏极附近。 光致抗蚀剂沉积在半导体上。 光致抗蚀剂暴露于穿过透明基板的光，使得栅极电极遮蔽光致抗蚀剂。 在暴露于光的区域中去除半导体层。