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公开(公告)号：US06437372B1
公开(公告)日：2002-08-20
申请号：US09540474
申请日：2000-03-31
IPC分类号： H01L3300
CPC分类号： G02F1/017 , B82Y20/00 , G02F2202/102 , H01L33/305 , H01S5/221 , H01S5/2224 , H01S5/2227 , H01S5/227 , H01S5/2275 , H01S5/3072
摘要： A diffusion preventing barrier spike is disclosed. The spike prevents diffusion of dopants into another layer without forming a pn junction in the layer. The spikes are illustratively Al or an aluminum containing material such as AlAs and have a thickness on the order of 1 nm. The spikes of the present invention may be used to stop dopant diffusion out of a doped layer in a variety of III-V semiconductor structures, such a InP-based PIN devices.
摘要翻译： 公开了防扩散阻挡尖峰。 尖峰防止掺杂剂扩散到另一层中而不在该层中形成pn结。 尖峰示例性地为Al或含铝材料如AlAs，并且具有约1nm的厚度。 本发明的尖峰可用于阻止掺杂剂扩散到各种III-V半导体结构中的掺杂层，例如基于InP的PIN器件。
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2.发明授权Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication 有权InAIAs双层在III-V器件制造中阻挡掺杂物扩散的应用公开(公告)号：US06706542B1
公开(公告)日：2004-03-16
申请号：US09645913
申请日：2000-08-25
IPC分类号： H01L2100
CPC分类号： H01S5/227 , H01L21/2205 , H01L33/02 , H01L33/305 , H01S5/2209 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2272 , H01S5/3072
摘要： The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is disposed between a first doped layer and a second doped layer. The multi-layer dopant barrier further includes a first dopant blocking layer adjacent the first doped layer and a second dopant blocking layer adjacent the second doped layer. A technique for fabricating the multi layer dopant barrier is disclosed. A first dopant blocking layer is formed at a first temperature, and a second dopant blocking layer is formed at a second temperature over the first barrier layer.
摘要翻译： 本发明涉及一种用于半导体结构的多层掺杂剂阻挡层及其制造方法。 在说明性实施例中，多层掺杂剂阻挡层设置在第一掺杂层和第二掺杂层之间。 多层掺杂剂阻挡层还包括与第一掺杂层相邻的第一掺杂剂阻挡层和与第二掺杂层相邻的第二掺杂剂阻挡层。 公开了一种用于制造多层掺杂剂阻挡层的技术。 在第一温度下形成第一掺杂剂阻挡层，并且在第一阻挡层上的第二温度下形成第二掺杂剂阻挡层。
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公开(公告)号：US06819695B1
公开(公告)日：2004-11-16
申请号：US09540471
申请日：2000-03-31
IPC分类号： H01S500
CPC分类号： H01S5/227 , H01L21/2205 , H01L33/02 , H01L33/305 , H01S5/2209 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2272 , H01S5/3072
摘要： A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant diffusion barrier layer prevents dopant diffusion.
摘要翻译： 公开了一种多层掺杂剂扩散阻挡层，其有效地防止掺杂剂扩散，但不会对寄生pn结或寄生电容有贡献。 多层掺杂剂扩散阻挡层防止掺杂剂扩散。
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4.发明授权Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs 有权使用InAlAs和/或InGaAlAs的光电器件的掺杂扩散阻挡公开(公告)号：US06664605B1
公开(公告)日：2003-12-16
申请号：US09539882
申请日：2000-03-31
申请人： Yuliya A. Akulova , Sung-nee G. Chu , Michael Geva , Mark S. Hybertsen , Charles W. Lentz , Abdallah Ougazzaden
发明人： Yuliya A. Akulova , Sung-nee G. Chu , Michael Geva , Mark S. Hybertsen , Charles W. Lentz , Abdallah Ougazzaden
IPC分类号： H01L310232
CPC分类号： H01S5/227 , G02F1/025 , H01S5/221 , H01S5/2213 , H01S5/2226 , H01S5/3072 , H01S5/50
摘要： A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.
摘要翻译： 公开了一种用于减少有源区中的掺杂剂原子的扩散以及相邻掺杂区中不同类型的掺杂剂原子在光电器件中的相互扩散的方法。 本发明的方法采用多个InAlAs和/或InGaAlAs层以避免掺杂剂原子与有源区之间以及光电子器件的相邻阻挡结构中的掺杂剂原子之间的直接接触。 还公开了抑制不同类型的掺杂剂原子的相互扩散的半绝缘掩埋隆起结构以及脊结构。
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公开(公告)号：US07084044B2
公开(公告)日：2006-08-01
申请号：US10862599
申请日：2004-06-07
申请人： Charles W. Lentz , Bettina A. Nechay , Abdallah Ougazzaden , Padman Parayanthal , George J. Przybylek
发明人： Charles W. Lentz , Bettina A. Nechay , Abdallah Ougazzaden , Padman Parayanthal , George J. Przybylek
IPC分类号： H01L21/76
CPC分类号： H01L31/184 , H01L31/1035 , H01L31/105 , H01S5/2081 , H01S5/2275 , Y02E10/544 , Y02P70/521
摘要： The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.
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公开(公告)号：US07008805B2
公开(公告)日：2006-03-07
申请号：US10729090
申请日：2003-12-05
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01S5/2227 , H01S5/2275
摘要： The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.
摘要翻译： 本发明提供一种光学装置及其制造方法。 在一个实施例中，制造光学器件的方法可以包括将第一层的端部与位于由衬底形成的台面结构之上的覆层进行隔离。 第一层的端部可以通过将端部封装在位于台面结构附近的第二层和第三层之间而与包层隔离。
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公开(公告)号：US06635502B1
公开(公告)日：2003-10-21
申请号：US09741358
申请日：2000-12-20
申请人： Si Hyung Cho , William Crossley Dautremont-Smith , Sun-Yuan Huang , Charles H Joyner , Ronald Eugene Leibenguth , Abdallah Ougazzaden , Claude Lewis Reynolds, Jr.
发明人： Si Hyung Cho , William Crossley Dautremont-Smith , Sun-Yuan Huang , Charles H Joyner , Ronald Eugene Leibenguth , Abdallah Ougazzaden , Claude Lewis Reynolds, Jr.
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/2059 , H01S5/2218 , H01S5/227 , H01S5/2275 , H01S5/3434
摘要： The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.
摘要翻译： 本发明是一种半导体光学器件及其制造方法，其中器件包括具有第一折射率的有源层的有源区和具有第二较低折射率的阻挡区。 在有源屏蔽区域和阻挡区域之间形成具有高于阻挡区域的折射率的半导体层，使得半导体层在未被阻挡区域覆盖的区域中更靠近有源层，以便减小区域之间的差异 有效区域中的有效折射率和阻挡区域的有效折射率。 这样的器件对于泵浦光放大器特别有用，因为可以在保持单模发射的同时实现更大的功率。
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公开(公告)号：US06828592B2
公开(公告)日：2004-12-07
申请号：US10120923
申请日：2002-04-11
申请人： Charles W. Lentz , Bettina A. Nechay , Abdallah Ougazzaden , Padman Parayanthal , George J. Przybylek
发明人： Charles W. Lentz , Bettina A. Nechay , Abdallah Ougazzaden , Padman Parayanthal , George J. Przybylek
IPC分类号： H01L29225
CPC分类号： H01L31/184 , H01L31/1035 , H01L31/105 , H01S5/2081 , H01S5/2275 , Y02E10/544 , Y02P70/521
摘要： The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.
摘要翻译： 本发明提供一种光电器件及其制造方法。 在一个实施例中，制造光电子器件的方法可以包括产生多层光学衬底，然后在多层光学衬底上形成自对准的双掩模。 该方法还可以包括通过自对准双掩模蚀刻多层光学衬底以形成台面结构。
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公开(公告)号：US06780241B2
公开(公告)日：2004-08-24
申请号：US10255354
申请日：2002-09-26
IPC分类号： C30B2504
CPC分类号： G02B6/136 , G02B6/12004
摘要： The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a substrate, and forming a second device over the substrate and adjacent the first device with a deposition gas having an etchant selective to a deposited component of the deposition gas.
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10.发明授权公开(公告)号：US06376272B1
公开(公告)日：2002-04-23
申请号：US09588427
申请日：2000-06-06
IPC分类号： H01L2100
CPC分类号： G02B6/10 , G02B6/122 , G02B6/136 , G02B2006/12097 , H01S5/209
摘要： A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH4/H2 etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.
摘要翻译： 半导体波导器件及其形成方法提供作为蚀刻停止层的InAlAs膜。 InAlAs膜不会在用于使用反应离子蚀刻技术制造器件的CH4 / H2蚀刻化学中蚀刻。 蚀刻工艺蚀刻在InAlAs层上形成的波导层和包覆层，并暴露InAlAs蚀刻停止膜以产生具有期望物理特性的波导器件。
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